MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 50 A IDM T C = 25°C, pulse width limited by TJM 200 A PD T C = 25°C 300 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain °C 300 Features l l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) V Applications l l 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 µA mA l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.045 Ω l IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91534F(5/97) 1-4 IXTH 50N20 IXTM 50N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 20 32 S 4600 pF 800 pF 285 pF 18 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 15 20 ns td(off) RG = 2 Ω, (External) 72 90 ns 16 25 ns 190 220 nC 35 50 nC 95 110 nC 0.42 K/W tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC R thCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 50N20 50 A Repetitive; pulse width limited by TJM 200 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V TO-247 AD (IXTH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline 400 V ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 50N20 IXTM 50N20 Fig. 1 Output Characteristics 100 TJ = 25°C 90 100 VGS = 10V 90 9V 8V 7V 70 80 ID - Amperes 80 ID - Amperes Fig. 2 Input Admittance 60 6V 50 40 30 70 60 TJ = 25°C 50 40 30 20 20 5V 10 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 VDS - Volts 5 6 7 8 9 10 VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 125 TJ = 25°C 2.25 100 75 VGS = 10V VGS = 15V 50 RDS(on) - Normalized RDS(on) - mOhms 4 2.00 1.75 1.50 ID = 40A 1.25 1.00 0.75 25 0 25 50 75 100 125 150 175 200 -50 -25 0 ID - Amperes 70 1.1 BV/VG(th) - Normalized 1.2 ID - Amperes 60 50N20 42N20 30 20 100 125 150 BVCES VGS(th) 1.0 0.9 0.8 0.7 0.6 10 0 -50 75 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 80 40 50 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 50 25 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 50N20 IXTM 50N20 Fig.7 Gate Charge Characteristic Curve 14 10µs VDS = 100V ID = 50A IG = 10mA 12 100µs 100 Limited by R DS(on) 10 ID - Amperes VGE - Volts Fig.8 Forward Bias Safe Operating Area 8 6 1ms 10ms 10 100ms 4 2 0 1 0 25 50 75 1 100 125 150 175 200 10 VDS - Volts Gate Charge - nCoulombs Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4500 50 Ciss 4000 40 3500 f = 1 MHz VDS = 25V 3000 ID - Amperes Capacitance - pF 100 2500 2000 Coss 1500 1000 0 0 5 TJ = 125°C 20 TJ = 25°C 10 Crss 500 30 10 15 20 0 0.2 25 0.4 VDS - Volts 0.6 0.8 1.0 VSD - Volts Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4