MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 V 100 V ID25 RDS(on) 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10 67 75 A A IDM TC = 25°C, pulse width limited by TJM 67N10 75N10 268 300 A A PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, D = Drain, TAB = Drain 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Features l l l l l Symbol G Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 V 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 µA mA 67N10 75N10 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.025 0.020 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91533E(5/96) 1-4 IXTH 67N10 IXTM 67N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω, (External) tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd 25 30 S 4500 pF 1300 pF 550 pF 40 60 ns 60 110 ns 100 140 ns 30 60 ns 180 260 nC 30 70 nC 90 160 nC 0.42 K/W R thJC R thCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 67N10 75N10 67 75 A A ISM Repetitive; pulse width limited by TJM 67N10 75N10 268 300 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.75 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 IXTH 75N10 IXTM 75N10 TO-247 AD (IXTH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204AE (IXTM) Outline ns Pins Dim. A A1 ∅b ∅D e e1 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 L 11.18 12.19 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 2-4 IXTH 67N10 IXTM 67N10 Fig. 1 Output Characteristics 200 Fig. 2 Input Admittance 150 VGS = 10V TJ = 25°C IXTH 75N10 IXTM 75N10 125 9V 8V 100 7V 50 ID - Amperes ID - Amperes 150 100 75 50 25 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 125°C 0 1 2 3 VDS - Volts 5 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 2.50 TJ = 25°C 2.25 1.2 VGS = 10V 1.1 1.0 VGS = 15V RDS(on) - Normalized 1.3 RDS(on) - Normalized 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 0.9 2.00 1.75 1.50 ID = 37.5A 1.25 1.00 0.75 0.8 0 20 40 60 80 0.50 -50 100 120 140 160 -25 0 ID - Amperes 80 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 75N10 BV/VG(th) - Normalized 1.1 67N10 60 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes TJ = 25°C 0 40 20 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 67N10 IXTM 67N10 Fig.7 Gate Charge Characteristic Curve IXTH 75N10 IXTM 75N10 Fig.8 Forward Bias Safe Operating Area 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 100µs 100 ID - Amperes 7 VGS - Volts 10µs Limited by RDS(on) 6 5 4 3 1ms 10ms 10 100ms 2 1 0 1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 6000 150 5000 125 Ciss IS - Amperes Capacitance - pF Fig.9 Capacitance Curves 4000 f = 1MHz VDS = 25V 3000 2000 100 Coss 1000 100 75 50 TJ = 125°C TJ = 25°C 0.50 1.00 25 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.75 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4