High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE(sat) = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20 V VGEM Transient ±30 V TC = 25°C 110 A IC90 TC = 90°C 55 A ICM TC = 25°C, 1 ms 160 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 110 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non-repetitive 10 ms PC TC = 25°C IGBT 500 W VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s 2500 3000 V~ V~ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Symbol Test Conditions BVCES IC = 6 mA, VGE = 0 V 1200 VGE(th) IC = 8 mA, VCE = VGE 4 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. TJ = 25°C TJ = 125°C 1 V IC25 TJ miniBLOC, SOT-227 B V 8 V 1 2.5 mA mA ±200 nA 4 V 2 4 3 1 = Emitter 2 = Gate 3 = Collector 4 = Emitter Either Emitter terminal can be used as Main or Kelvin Emitter Features International standard package miniBLOC Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Low collector-to-case capacitance (<100 pF) - reduces RFI Low package inductance (< 10 nH) - easy to drive and to protect Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings Easy to mount with 2 screws High power density 95594B(6/97) 1-2 IXSN55N120A Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = IC90; VCE = 10 V 32 45 S 340 A 8000 pF miniBLOC, SOT-227 B Pulse test, t £ 300 ms, duty cycle d £ 2 % IC(on) VCE = 10 V, VGE = 15 V C ies 590 pF C res 120 pF Qg 300 nC 80 nC Qgc 140 nC td(on) 140 ns 220 ns 400 Coes Qge t ri td(off) tfi Eoff VCE = 25 V, VGE = 0 V, f = 1 MHz M4 screws (4x) supplied IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG td(on) Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 ns J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 18 mJ L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 140 ns N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 700 1000 t ri Inductive load, TJ = 125°C 250 ns P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 td(off) IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W 600 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 tsi Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 900 ns 950 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 tc E(on) 6 mJ Eoff 25 mJ 0.05 0.25 K/W K/W RthJC RthCK © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2