IXYS 80N60B

High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B
IXSX 80N60B
VCES
IC25
= 600 V
= 160 A
= 2.5 V
VCE(sat)
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
600
600
V
V
VCES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
IL(RMS)
ICM
TC
TC
TC
TC
160
80
75
300
A
A
A
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 160
@ 0.8 VCES
A
tsc
SCSOA
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C
RG = 5 Ω, non-repetitive
10
µs
PC
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
=
=
=
=
25°C
90°C
90°C
25°C, 1 ms
Maximum Ratings
(silicon chip capability)
(silicon chip capability)
(silicon chip capability)
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
Symbol
Test Conditions
BVCES
IC
= 500 µA, VGE = 0 V
VGE(th)
IC
= 8 mA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2002 IXYS All rights reserved
6
10
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
TJ = 125°C
G
(TAB)
C
E
TO-264 AA
(IXSK)
G
C
0.4/6 Nm/lb.in.
PLUS 247
TO-264
PLUS 247TM
(IXSX)
V
8
V
200
2
µA
mA
±200
nA
2.5
V
G = Gate
C = Collector
(TAB)
E
E = Emitter
TAB = Collector
Features
!
International standard packages
!
Very high current, fast switching IGBT
!
Low VCE(sat)
- for minimum on-state conduction
losses
!
MOS Gate turn-on
- drive simplicity
Applications
!
AC motor speed control
!
DC servo and robot drives
!
DC choppers
!
Uninterruptible power supplies (UPS)
!
Switch-mode and resonant-mode
power supplies
Advantages
!
PLUS 247TM package for clip or spring
mounting
!
Space savings
!
High power density
98721B (07/02)
IXSK 80N60B
IXSX 80N60B
Symbol
Test Conditions
gfs
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 60 A; VCE = 10 V,
52
PLUS 247TM Outline
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
6600
pF
660
pF
196
pF
240
nC
85
nC
90
nC
Inductive load, TJ = 25°°C
60
ns
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
45
ns
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
140
280
ns
180
280
ns
Eoff
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
4.2
7.0 mJ
td(on)
Inductive load, TJ =125°°C
60
ns
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
60
ns
4.8
mJ
190
ns
260
ns
6.7
mJ
td(off)
tfi
tri
Eon
td(off)
tfi
Eoff
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
0.26 K/W
RthJC
RthCK
Terminals:
0.15
K/W
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1