VCES Low VCE(sat) IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings 1000 V 20 A 1000 V 20 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 20 A I C90 TC = 90°C 10 A I CM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A PC TC = 25°C 100 W Features -55 ... +150 °C l TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol G Test Conditions g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V 1000 2.5 TJ = 25°C TJ = 125°C 10N100 10N100A V 5 V 250 1 µA mA ±100 nA 3.5 4.0 V V l l l l E C = Collector, TAB = Collector International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages l l © 1996 IXYS All rights reserved 3.5 V 4.0 V Applications l BVCES C G = Gate, E = Emitter, l 6 VCE(sat) TO-247 AD 1.13/10 Nm/lb.in. Weight IC25 Easy to mount with 1 screw (isolated mounting screw hole) High power density 93004D (3/96) IXGH 10N100 IXGH 10N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 4 Cies S 750 pF 150 pF Cres 30 pF Qg 52 70 nC 13 25 nC 24 45 nC Coes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz 8 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 100 ns IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES , RG = Roff = 150 Ω 200 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 550 ns 10N100 10N100A 800 500 ns ns 10N100A 2 3 mJ 100 ns Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 V CES, RG = Roff = 150 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 900 200 ns 1.1 mJ 600 1000 ns 10N100 10N100A 1250 950 2000 1000 ns ns 10N100 10N100A 5.0 2.5 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ mJ 1.2 K/W RthJC RthCK TO-247 AD Outline 0.25 K/W IXGH 10N100 and IXGH 10N100A characteristic curves are located on the IXGH 10N100U1 and IXGH 10N100AU1 data sheets. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025