SEMICONDUCTOR E30A23VPS, E30A23VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E Zener Voltage : 23V(Typ.) L2 F1 POLARITY E30A23VPR (+ Type) (- Type) B L1 G E30A23VPS A MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Average Forward Current IF(AV) 30 A Peak 1 Cycle Surge Current IFSM 300(50Hz) A IRSM 30 A Transient Peak Reverse Voltage VRSM 17 V Peak Reverse Voltage VRM 17 V Junction Temperature Tj -40 200 Tstg -40 200 Repetitive Peak Reverse Surge Current Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM MILLIMETERS DIM MILLIMETERS 0.32 F1 Φ11.7+0.1/-0 A 3.1 F2 3.85+0/-0.2 B _ 0.1 G 0.5 D Φ1.45 + L1 8.4 MAX E 1.55 DIM TYPE POLARITY S L2 R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 PF ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.17 V Zener Voltage VZ IZ=10mA 21 23 25 V IRRM VR=VRM - - 10 A IFM=100A - - 140 mV HIR Ta=150 , VR=VRM - - 2.5 mA Rth DC total junction to case - - 1.0 Repetitive Peak Reverse Current VF Transient Thermal Resistance Reverse Leakage Current Under High Temperature Temperature Resistance 2002. 10. 9 Revision No : 1 /W 1/1