SEMICONDUCTOR E35A27VBCS, E35A27VBCR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 27V(Typ.) POLARITY E35A27VBCS (+ Type) E35A27VBCR (- Type) K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E I DIM A B C D E F G H I J K L MILLIMETERS Φ9.55 MAX Φ10.1+0.09-0.00 _ 0.04 Φ1.3 + _ 0.2 3.2+ _ 0.1 6.2 + TYP 0.4 _ 0.2 8.66 + _ 0.1x45 0.389+ 6.7 MAX 0.2+0.1 *Note Φ6.10(+0, -0.03) J D SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 42 A Transient Peak Reverse Voltage VRSM 22 V Peak Reverse Voltage VRM 20 V Item Length(K) Junction Temperature Tj -40～215 ℃ E35A27VBCS 20.35±0.5 Tstg -40～215 ℃ E35A27VBCR 28.35±0.5 F L G B C-PF *Note Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.10 V Zener Voltage VZ IZ=10mA 24 27 29 V Reverse Current IR VR=20V - - 0.2 μA IFM=100A, IM=100mA, Pw=100mS - - 80 mV ΔVF Transient Thermal Resistance Breakdown Voltage Vbr Irsm=42A, Pw=10mS - - 34 V Temperature Coefficient αT IZ=10mA - 15.7 - mV/℃ HIR Ta=150℃, VR=20V - - 100 μA Rth DC total junction to case - - 0.8 ℃/W Reverse Leakage Current Under High Temperature Temperature Resistance 2012. 5. 23 Revision No : 0 1/1