KEC KTC3072D

SEMICONDUCTOR
KTC3072D/L
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A
FEATURES
I
C
J
D
Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A)
M
O
K
E
Q
B
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25
H
)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
7
V
Collector
DC
IC
5
Current
Pulse (Note1)
ICP
8
Collector Power Dissipation
PC
1.0
Junction Temperature
Tj
150
Tstg
-55 150
Storage Temperature Range
1
L
F
2
3
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
1. BASE
2. COLLECTOR
3. EMITTER
A
DPAK
W
I
A
C
J
D
CHARACTERISTIC
P
F
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
K
Q
B
Note 1: Pulse Width 100mS, Duty Cycle 30%
P
H
E
G
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.2
2.0 +
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
IPAK
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Base Breakdown Voltage
V(BR)CBO
IC=100 A, IE=0
40
-
-
V
Collector Emitter Breakdown Voltage (1)
V(BR)CEO
IC=1mA, IB=0
20
-
-
V
Emitter Base Breakdown Voltage
V(BR)EBO
IE=10 A, IC=0
7
-
-
V
Collector Cutoff Current
ICBO
VCB=20V, IE=0
-
-
100
nA
Emitter Cutoff Current
IEBO
VEB=7V, IC=0
-
-
100
nA
VCE=2V, IC=0.5A
120
-
700
hFE(2)
VCE=2V, IC=2A
100
-
-
VCE(sat)
IC=3A, IB=60mA(Pulse)
-
-
0.4
V
20
100
-
MHz
-
-
50
pF
hFE(1)(Note1)
DC Current Gain
Collector-Emitter Saturation Voltage
fT
Transition Frequency
Cob
Collector Output Capacitance
Note 1 : hFE(1) Classification
2003. 3. 27
O:120 240, Y:200
Revision No : 3
400,
VCE=6V, IC=50mA
VCB=20V, f=1MHz, IE=0
GR:350 700
1/3
Pc - Ta
I C - VCE
1.6
3.4
COLLECTOR CURRENT I C (A)
COLLECTOR POWER DISSIPATION PC (W)
KTC3072D/L
1.4
1.2
1.0
Ta
=2
5
0.8
C
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
1.6
3mA
1.2
2mA
0.8
I B =1mA
0.4
0
0.4
0.8
1.2
4
3
2
1
0.2
0.4
0.6
0.8
1.0
6
5
4
3
2
1
0
1.2
0
0.2
0.4
TRANSITION FREQUENCY f T (MHz)
700
Ta=25 C
600
500
400
300
200
100
0.1
0.3
0.6
1
3
COLLECTOR CURRENT I C (A)
Revision No : 3
0.8
1.0
1.2
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
VCE =2V
0.03
2.8
I C /IB =30
fT -
800
DC CURRENT GAIN h FE
2.4
Ta=25 C
h FE - I C
2003. 3. 27
2.0
7
BASE-EMITTER VOLTAGE VBE (V)
0
0.01
1.6
8
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
4mA
I C - VCE(sat)
Ta=25 C
0
2.0
I C - VBE
5
0
6mA
5mA
COLLECTOR-EMITTER VOLTAGE V CE (V)
VCE =10V
6
2.4
AMBIENT TEMPERATURE Ta ( C)
8
7
7mA
2.8
0
160
Ta=25 C
3.2
10
IE
400
VCE =6V
Ta=25 C
300
200
100
0
0.01
0.03
0.1
0.3
1
3
10
EMITTER CURRENT I E (A)
2/3
KTC3072D/L
100
SAFE OPERATION AREA
60
40
20
0
1
3
5
10
30
50
Revision No : 3
100
30
10
3
I C MAX.(PULSED)*
I C MAX.
t=
1s
1
0.3
0.1
0.03
0.01
0.1
*
s*
0m
COLLECTOR CURRENT I C (A)
80
COLLECTOR BASE VOLTAGE VCB (V)
2003. 3. 27
100
I E =0
f=1MHz
Ta=25 C
1
t=
OUTPUT CAPACITANCE C ob (pF)
C ob - VCB
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.3
1
3
10
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
3/3