SEMICONDUCTOR KTA1725 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A FEATURES ・Complementary to KTC4511. C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70±0.30 D 0.85 MAX E Φ3.20±0.20 F 3.00±0.30 12.30 MAX G 0.75 MAX R H 13.60±0.50 J K 3.90 MAX L 1.20 1.30 M V N 2.54 4.50±0.20 O P 6.80 2.60±0.20 Q R 10° H S 25° 5° T U 0.5 V 2.60±0.15 P F U S G B E T L K L MAXIMUM RATING (Ta=25℃) J M RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -6 V Collector Current IC -6 A Base Current IB -3 A Collector Power Dissipation (Tc=25℃) PC 30 W Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range D D N N T T 1 2 3 Q SYMBOL O CHARACTERISTIC 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -10 μA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -10 μA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-25mA, IB=0 -80 - - V DC Current Gain hFE(Note) VCE=-4V, IC=-2A 55 - 160 VCE(sat) IC=-2A, IB=-0.2A - - -0.5 V VCE=-12V, IC=-0.5A - 20 - MHz VCB=-10V, IE=0, f=1MHz - 150 - pF Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance Note : hFE Classification 2002. 6. 5 R:55~110, O:80~160. Revision No : 0 1/3 KTA1725 COLLECTOR CURRENT I C (A) -6 IC 2 =- VCE(sat) - I B A 0m mA -15 00 IC = COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C - VCE I C =-100mA I =-80mA C -4 I C =-50mA I C =-30mA I C =-20mA -2 I C =-10mA 0 0 -1 -2 -3 -3 -2 -1 I C=-6A I C=-4A I C=-2A 0 -4 0 -0.5 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 1k V CE =-4V -4 C C Tc= -3 0 Tc =2 5 Tc =1 25 C -2 0 -1 0 Tc=125 C Tc=25 C 100 Tc=-30 C 50 30 -0.03 -0.1 -0.3 -1 -3 h FE - I C R th - t TRANSIENT THERMAL RESISTANCE r th ( C/W) DC CURRENT GAIN h FE 300 COLLECTOR CURRENT I C (A) 300 Tc=125 C Tc=25 C Tc=-30 C 50 30 -0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT I C (A) 2002. 6. 5 500 BASE-EMITTER VOLTAGE VBE (V) 500 10 -0.01 VCE =-4V 10 -0.01 -1.5 1k VCE =-4V 100 -1.5 BASE CURRENT I B (A) I C - V BE -6 -1.0 Revision No : 0 -10 1k -10 1 NO HEAT SINK 2 INFINITE SINK 100 1 10 2 1 0.1 0.001 0.01 0.1 1 10 100 1k TIME t (S) 2/3 KTA1725 fT - IE SAFE OPERATING AREA VCE =-12V -30 C 5 12 = Tc 5 C =2 Tc C 0 =-3 Tc 20 10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 EMITTER CURRENT I E (A) COLLECTOR CURRENT IC (A) CUT-OFF FREQUENCY f T (MHz) 30 I C MAX.(PULSED) -10 100ms* -5 -3 DC (T c= 25 -1 -0.5 -0.3 10 ms * C) *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -0.05 -3 -10 -30 -100 - 300 COLLECTOR-EMITTER VOLTAGE VCE (V) MAXIMUM POWER DISSIPATION PC (W) Pc - Ta -40 (1)Tc=Ta INFINITE HEAT SINK (2)NO HEAT SINK -30 -25 (1) -20 -15 -10 -5 (2) 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2002. 6. 5 Revision No : 0 3/3