SEMICONDUCTOR KTC2814 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. A B D C E FEATURES F Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) G High Speed Switching Time : tstg=1.0 S(Typ.) H Complementary to KTA1715. DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Emitter Current IE -2 A Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range 1.5 PC 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE TO-126 Tj 150 Tstg -55 150 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A V(BR)CEO IC=10mA, IB=0 50 - - V hFE (1) (Note) VCE=2V, IC=0.5A 70 - 240 hFE 2 VCE=2V, IC=1.5A 40 - - Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A - - 1.2 V fT VCE=2V, IC=0.5A - 100 - MHz VCB=10V, IE=0, f=1MHz - 30 - pF - 0.1 - 30Ω CHARACTERISTIC O N W 10 ELECTRICAL CHARACTERISTICS (Ta=25 M MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX - 1.0 - VCC =30V - 0.1 - Collector-Emitter Breakdown Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time Note : hFE Classification 2003. 7. 24 O:70 140, Y:120 Revision No : 3 Cob ton tstg tf OUTPUT 20µsec IB1 INPUT IB2 IB1=-I B2 =-0.05A DUTY CYCLE < = 1% I B1 I B2 S 240 1/3 KTC2814 0.4 I B =2mA 4 0 0 0.4 COMMON EMITTER Ta=25 C VCE =2V 20 10 BASE CURRENT I B (mA) 0 2 4 6 8 20 10 0.4 30 40 0.2 0 0 0.4 0 0 20 0.4 0.8 1.2 1.6 40 2.0 2.4 COLLECTOR-EMITTER VOLTAGE VCE (V) I B =5mA 0.6 0.2 COLLECTOR CURRENT I C (A) COMMON EMITTER Ta=100 C 0.8 30 10 VCE - I C 1.0 0.4 0.8 1.2 1.6 2.0 VCE - I C 1.0 COMMON EMITTER Ta=-55 C 0.8 0.6 0.4 30 1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.8 0.6 20 0.8 0.8 10 12 10 8 6 COMMON EMITTER Ta=25 C I B =5mA 1.2 30 COLLECTOR-EMITTER VOLTAGE VCE (V) 15 1.0 10 1.6 18 VCE - I C I B =5mA 2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) 25 20 =2V BASE EMITTER VOLTAGE VBE (V) 2.4 V CE COLLECTOR CURRENT I C (A) STATIC CHARACTERISTICS 40 50 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR CURRENT I C (A) 2.4 COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN hFE 300 Ta=100 C Ta=25 C 100 Ta=-55 C 50 30 COMMON EMITTER VCE =2V 10 0.01 0.03 0.1 0.3 COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 1 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C 1 COMMON EMITTER I C /I B =20 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-55 C 0.01 0.03 0.1 0.3 1 2 COLLECTOR CURRENT I C (A) 2/3 KTC2814 Pc - Ta SAFE OPERATING AREA 1.6 5 I C MAX.(PULSED)* 3 10ms* I C MAX.(CONTINOUS) 1ms* 1 100mS* 0.5 DC OPERATION Ta=25 C 0.3 0.1 0.05 0.03 0.02 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.1 0.3 1 3 VCEO MAX. 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 7. 24 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT I C (A) 10 Revision No : 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 3/3