KODENSHI EL-1K3

Infrared Emitting Diodes(GaAs)
KODENSHI
EL-1K3
DIMENSIONS
(Unit : mm)
The EL-1K3 is a high-power GaAs IRED mounted in
durable, hermetically sealed TO-18 metal can
package, which provides years of reliable performance
even under demanding conditions such as use
outdoors.
FEATURES
•Wide beam angle
•Durable
•High reliability in demanding environments
APPLICATIONS
•Optical emitters
•Optical switches
•Smoke sensors
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Pulse forward current *1
Power dissipation
Operating temp.
Storage temp.
Soldering temp. *2
(Ta=25℃)
Symbol
Rating
Unit
VR
IF
IFP
PD
Topr.
Tstg.
Tsol.
5
100
1
200
-30~+100
-55~+125
260
V
mA
A
mW
℃
℃
℃
*1. pulse width :tw ≦100 μ
sec.period :T=10msec.
*2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
(Ta=25℃)
Symbol
Conditions
VF
IR
Ct
PO
λp
Δλ
△θ
IF=100mA
VR=5V
f=1MHz
IF=100mA
IF=100mA
IF=100mA
Min.
Typ.
1.35
2.2
- 1-
25
4.0
940
50
±36
Max.
Unit.
1.7
10
V
μ
A
pF
mW/sr
nm
nm
deg.
Infrared Emitting Diodes(GaAs)
EL-1K3
Power dissipation Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-