Infrared Emitting Diodes(GaAs) KODENSHI EL-1K3 DIMENSIONS (Unit : mm) The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors. FEATURES •Wide beam angle •Durable •High reliability in demanding environments APPLICATIONS •Optical emitters •Optical switches •Smoke sensors MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 5 100 1 200 -30~+100 -55~+125 260 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=100mA VR=5V f=1MHz IF=100mA IF=100mA IF=100mA Min. Typ. 1.35 2.2 - 1- 25 4.0 940 50 ±36 Max. Unit. 1.7 10 V μ A pF mW/sr nm nm deg. Infrared Emitting Diodes(GaAs) EL-1K3 Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2-