Infrared Emitting Diodes(GaAIAs) KBL-1KL3 1. Description The KBL-1KL3 is a GaAlAs IRED mounted in durable, hermetically sealea TO-18 metal can type,which provide years of reliable performance, even under demanding conditions such as use outdoors. 2. Features ◆ Narrow beam angle ◆ Durable ◆ High reliability in demanding environments 3. Applications ① ② ◆ Optical encoders ◆ Fiber optic communications ② ① 4. Package Outline Dimensions (Unit: mm) 5. Absolute Maximum Ratings Parameter Symbol Ratings Unit Reverse Voltage VR 5 V Forward Current IF 50 ㎃ Pulse Forward Current (see notes *1) IFP 0.5 A Power Dissipation PD 120 ㎽ Operating Temperature Topr. -40 ~ +100 ℃ Storage Temperature Tstg. -55 ~ +125 ℃ Soldering Temperature (see notes *2) Tsol. 260 ℃ Notes : *1. 100KHz , Duty 10% 2. Distance from end of the package = 2.0mm, time = 5sec max. 6. Electro-optical Characteristics Parameter [TA = 25℃] Min. Typ. Max. Unit Symbol Conditions Forward Voltage VF IF = 20㎃ - 1.8 2.2 V Reverse Voltage VR IR = 10 ㎂ 5 - - V Capacitance CT f = 1MHz - 40 - pF Out power * 1 PO IF = 20㎃ 10 18 - mV Radiant Intensity IV IF = 20㎃ - 450 - mcd Peak Emission Wavelength λp IF = 50㎃ - 660 - ㎚ Spectral Half Bandwidth Δλ IF = 20㎃ - 20 - ㎚ - ±8 - deg. Δθ * 1 : measured by our TO-18 package type tester Half Angle KKC-QM-043-2 1/2 Infrared Emitting Diodes(GaAIAs) KBL-1KL3 ◆ Typical Characteristics ■ Radiant intensity Vs Forward current Power dissipation (PD) Radiant intensity (Po) ■Power dissipation Vs Ambient temperature Ambient temperature (Ta) (%) Ta=25℃ 100 10 Radiant intensity Relative radiant intensity (Po) Forward current (IF) ■Relative radiant intensity Vs Ambient temperature ■Relative intensity Vs Wavelength 80 1 60 40 0.1 20 -20 0 20 40 60 80 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength(λ) Wavelength(λ) 100 (℃) Ambient temperature (Ta) ■Sensitivity diagram Vs Angular displacement Angle (deg.) Forward current (IF) ■Forward current Vs Forward voltage Forward voltage (VF) KKC-QM-043-2 Relative intensity(%) 2/2