KODENSHI KBL-1KL3

Infrared Emitting Diodes(GaAIAs)
KBL-1KL3
1. Description
The KBL-1KL3 is a GaAlAs IRED mounted in durable, hermetically sealea TO-18 metal can type,which
provide years of reliable performance, even under demanding conditions such as use outdoors.
2. Features
◆ Narrow beam angle
◆ Durable
◆ High reliability in demanding environments
3. Applications
①
②
◆ Optical encoders
◆ Fiber optic communications
②
①
4. Package Outline
Dimensions (Unit: mm)
5. Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
50
㎃
Pulse Forward Current (see notes *1)
IFP
0.5
A
Power Dissipation
PD
120
㎽
Operating Temperature
Topr.
-40 ~ +100
℃
Storage Temperature
Tstg.
-55 ~ +125
℃
Soldering Temperature (see notes *2)
Tsol.
260
℃
Notes : *1. 100KHz , Duty 10%
2. Distance from end of the package = 2.0mm, time = 5sec max.
6. Electro-optical Characteristics
Parameter
[TA = 25℃]
Min. Typ. Max.
Unit
Symbol
Conditions
Forward Voltage
VF
IF = 20㎃
-
1.8
2.2
V
Reverse Voltage
VR
IR = 10 ㎂
5
-
-
V
Capacitance
CT
f = 1MHz
-
40
-
pF
Out power * 1
PO
IF = 20㎃
10
18
-
mV
Radiant Intensity
IV
IF = 20㎃
-
450
-
mcd
Peak Emission Wavelength
λp
IF = 50㎃
-
660
-
㎚
Spectral Half Bandwidth
Δλ
IF = 20㎃
-
20
-
㎚
-
±8
-
deg.
Δθ
* 1 : measured by our TO-18 package type tester
Half Angle
KKC-QM-043-2
1/2
Infrared Emitting Diodes(GaAIAs)
KBL-1KL3
◆ Typical Characteristics
■ Radiant intensity Vs Forward current
Power dissipation (PD)
Radiant intensity (Po)
■Power dissipation Vs Ambient temperature
Ambient temperature (Ta)
(%)
Ta=25℃
100
10
Radiant intensity
Relative radiant intensity (Po)
Forward current (IF)
■Relative radiant intensity Vs Ambient temperature ■Relative intensity Vs Wavelength
80
1
60
40
0.1
20
-20
0
20
40
60
80
0
400 500 600 700 800 900 1000 1100(㎚)
Wavelength(λ)
Wavelength(λ)
100 (℃)
Ambient temperature (Ta)
■Sensitivity diagram Vs Angular displacement
Angle (deg.)
Forward current (IF)
■Forward current Vs Forward voltage
Forward voltage (VF)
KKC-QM-043-2
Relative intensity(%)
2/2