VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C G1 Maximum Power Dissipation D1 300mW Continuous Power Dissipation S1 Maximum Current Forward Gate Current 3 S2 5 2 D2 6 1 7 G2 10mA Maximum Voltages Gate to Drain Voltage 25V Gate to Source Voltage 25V *Contact the factory for surface mount package options and pin outs. ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(off) Gate to Source Cutoff Voltage -8 IGSS rds(on) rDS(min) rDS(max) Gate Reverse Current Dynamic Drain to Source On Resistance Static Drain to Source On Resistance Ratio TYP MAX UNITS -12 V CONDITIONS IG = -1µA, VDS = 0V ID = 1µA, VDS = 10V -0.2 nA VGS = -15V, VDS = 0V 100 200 Ω VGS = 0V, ID = 0A, f = 1kHz 0.95 1 VDS = 100mV, rDS = 200Ω2 0.95 1 VGS1 = VGS2, rDS = 2kΩ2 Cdgo Drain to Gate Capacitance 8 pF VGD = -10V, IS = 0A, f = 1MHz Csgo Source to Gate Capacitance 8 pF VGS = -10V, ID = 0A, f = 1MHz 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. VGS1 + Control Voltage necessary to force rDS to 200Ω or 2kΩ. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261