LINEAR LSK170

LSK170
ULTRA LOW NOISE
SINGLE N-CHANNEL JFET
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE (f = 1kHz)
en = 0.9nV/√Hz
HIGH BREAKDOWN VOLTAGE
BVGSS = 40V max
HIGH GAIN
Yfs = 22mS (typ)
HIGH INPUT IMPEDANCE
IG = -500pA max
LOW CAPACITANCE
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
D G S
Maximum Temperatures
1 2 3
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
SOT-23
TOP VIEW
TO-92
BOTTOM VIEW
22pF max
D
1
S
2
3
G
Maximum Power Dissipation
400mW
Continuous Power Dissipation @ +125 °C
Maximum Currents
Gate Forward Current
IG(F) = 10mA
*For equivalent monolithic dual, see LSK389 family.
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
CHARACTERISTIC
MIN
Gate to Source Breakdown Voltage
40
VGS(OFF)
Gate to Source Pinch-off Voltage
0.2
VGS
Gate to Source Operating Voltage
Drain to Source Saturation
Current
IDSS
IG
LSK170A
TYP
MAX UNITS
2
0.5
2.6
CONDITIONS
V
VDS = 0, ID = 100µA
V
VDS = 10V, ID = 1nA
V
VDS = 10V, ID = 1mA
mA
VDG = 10V, VGS = 0
nA
VDG = 10V, ID = 1mA
6.5
LSK170B
6
12
LSK170C
10
20
Gate Operating Current
0.5
IGSS
Gate to Source Leakage Current
nA
VDG = 10V, VDS = 0
Yfss
Full Conduction Transconductance
22
mS
VGD = 10V, VGS = 0, f = 1kHz
Yfs
Typical Conduction Transconductance
10
mS
VDG = 15V, ID = 1mA
en
Noise Voltage
0.9
1.9
nV/√Hz
VDS = 10V, ID = 2mA, f = 1kHz,
NBW = 1Hz
en
Noise Voltage
2.5
4
nV/√Hz
VDS = 10V, ID = 2mA, f = 10Hz,
NBW = 1Hz
CISS
Common Source Input Capacitance
20
pF
CRSS
Common Source Reverse Transfer Cap.
5
pF
1.
1
VDS = 15V, ID = 500µA
Absolute maximum ratings are limiting values above which serviceability may be impaired.
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