8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time: 90ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • TSOP, SOP and FBGA packaging options • Byte- or word-wide READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 OPTIONS 44-Pin SOP MARKING • Timing 90ns access -9 • Configurations 1 Meg x 8 512K x 16/1 Meg x 8 GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site (www.micron.com/flash) for the latest data sheet. MT28F008B3 MT28F800B3 • Boot Block Starting Word Address Top (7FFFFh) Bottom (00000h) • Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) • Packages 40-pin TSOP Type I (MT28F008B3) 48-pin TSOP Type I (MT28F800B3) 44-pin SOP (MT28F800B3) NOTE: 40-Pin TSOP Type I 48-Pin TSOP Type I T B None ET VG WG SG 1. This generation of devices does not support 12V VPP production programming; however, 5V VPP application production programming can be used with no loss of performance. Part Number Example: MT28F800B3WG-9 BET 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 1 ©2001, Micron Technology, Inc. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN ASSIGNMENT (Top View) 48-Pin TSOP Type I A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# VPP WP# NC A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 44-Pin SOP A16 BYTE# VSS DQ15/(A - 1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 ORDER NUMBER AND PART MARKING MT28F800B3WG-9 B MT28F800B3WG-9 T MT28F800B3WG-9 BET MT28F800B3WG-9 TET VPP 1 44 RP# A18 2 43 WE# A17 3 42 A8 A7 4 41 A9 A6 5 40 A10 A5 6 39 A11 A4 7 38 A12 A3 8 37 A13 A2 9 36 A14 A1 10 35 A15 A0 11 34 A16 CE# 12 33 BYTE# VSS 13 32 VSS OE# 14 31 DQ15/(A - 1) DQ0 15 30 DQ7 DQ8 16 29 DQ14 DQ1 17 28 DQ6 DQ9 18 27 DQ13 DQ2 19 26 DQ5 DQ10 20 25 DQ12 DQ3 21 24 DQ4 DQ11 22 23 VCC ORDER NUMBER AND PART MARKING MT28F800B3SG-9 B MT28F800B3SG-9 T MT28F800B3SG-9 BET MT28F800B3SG-9 TET 40-Pin TSOP Type I A16 A15 A14 A13 A12 A11 A9 A8 WE# RP# VPP WP# A18 A7 A6 A5 A4 A3 A2 A1 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 A17 VSS NC A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0 ORDER NUMBER AND PART MARKING MT28F008B3VG-9 B MT28F008B3VG-9 T MT28F008B3VG-9 BET MT28F008B3VG-9 TET 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 FUNCTIONAL BLOCK DIAGRAM BYTE# 2 8 Input Buffer 7 Input Buffer I/O Control Logic 16KB Boot Block Addr. Buffer/ 19 (20) 10 X - Decoder/Block Erase Control A0–A18/(A19) Latch A9 9 (10) Addr. Power (Current) Control Counter WP# 1 96KB Main Block Input Buffer 128KB Main Block 128KB Main Block A-1 128KB Main Block Input Data Latch/Mux 128KB Main Block DQ15/(A - 1) 2 128KB Main Block 16 128KB Main Block DQ8–DQ14 2 128KB Main Block Command State Execution Machine Logic YDecoder 3 RP# VCC VPP 8 Sense Amplifiers Write/Erase-Bit Compare and Verify VPP Switch/ Pump Output Buffer DQ15 Identification Register Output Buffer 7 8 MUX Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. Status Register 8 NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. DQ0–DQ7 7 Y - Select Gates Output Buffer 8Mb SMART 3 BOOT BLOCK FLASH MEMORY CE# OE# WE# 8KB Parameter Block 8KB Parameter Block 8Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS SYMBOL TYPE DESCRIPTION 43 9 11 WE# Input Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command execution logic (CEL) or to the memory array. – 12 14 WP# Input Write Protect: Unlocks the boot block when HIGH if VPP = VPPH1 (3.3V) or VPPH2 (5V) and RP# = VIH during a WRITE or ERASE. Does not affect WRITE or ERASE operation on other blocks. 12 22 26 CE# Input Chip Enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and goes into standby power mode. 44 10 12 RP# Input Reset/Power-Down: When LOW, RP# clears the status register, sets the internal state machine (ISM) to the array read mode and places the device in deep power-down mode. All inputs, including CE#, are “Don’t Care,” and all outputs are High-Z. RP# unlocks the boot block and overrides the condition of WP# when at VHH (12V), and must be held at VIH during all other modes of operation. 14 24 28 OE# Input Output Enable: Enables data output buffers when LOW. When OE# is HIGH, the output buffers are disabled. 33 – 47 BYTE# Input Byte Enable: If BYTE# = HIGH, the upper byte is active through DQ8–DQ15. If BYTE# = LOW, DQ8–DQ14 are High-Z, and all data is accessed through DQ0–DQ7. DQ15/(A - 1) becomes the least significant address input. 11, 10, 9, 8, 7, 6, 5, 4, 42, 41, 40, 39, 38, 37, 36, 35, 34, 3, 2 21, 20, 19, 18, 17, 16, 15, 14, 8, 7, 36, 6, 5, 4, 3, 2, 1, 40, 13, 37 25, 24, 23, 22, 21, 20, 19, 18, 8, 7, 6, 5, 4, 3, 2, 1, 48, 17, 16 A0–A18/ (A19) Input Address Inputs: Select a unique 16-bit word or 8-bit byte. The DQ15/(A - 1) input becomes the lowest order address when BYTE# = LOW (MT28F800B3) to allow for a selection of an 8bit byte from the 1,048,576 available. 31 – 45 DQ15/ (A - 1) Input/ Data I/O: MSB of data when BYTE# = HIGH. Address Input: LSB Output of address input when BYTE# = LOW during READ or WRITE operation. 15, 17, 19, 21, 24, 26, 28, 30 25, 26, 27, 28, 32, 33, 34, 35 29, 31, 33, 35, 38, 40, 42, 44 DQ0– DQ7 Input/ Data I/Os: Data output pins during any READ operation or Output data input pins during a WRITE. These pins are used to input commands to the CEL. 16, 18, 20, 22, 25, 27, 29 – 30, 32, 34, 36, 39, 41, 43 DQ8– DQ14 Input/ Data I/Os: Data output pins during any READ operation or Output data input pins during a WRITE when BYTE# = HIGH. These pins are High-Z when BYTE# is LOW. 1 11 13 VPP Supply Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until completion of the WRITE or ERASE, VPP must be at VPPH1 (3.3V) or VPPH2 (5V). VPP = “Don’t Care” during all other operations. 23 30, 31 37 VCC Supply Power Supply: +3.3V ±0.3V. 13, 32 23, 39 27, 46 VSS Supply Ground. – 29, 38 9, 10, 15 NC 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 – No Connect: These pins may be driven or left unconnected. 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY TRUTH TABLE (MT28F800B3)1 RP# CE# OE# A9 VPP Standby FUNCTION H H X WE# WP# BYTE# A0 X X X X X X DQ0–DQ7 DQ8–DQ14 DQ15/A - 1 High-Z High-Z High-Z RESET L X X X X X X X X High-Z High-Z High-Z READ (word mode) H L L H X H X X X Data-Out Data-Out Data-Out READ (byte mode) H L L H X L X X X Data-Out High-Z Output Disable H L H H X X X X X High-Z High-Z High-Z H L X X X X X 20h X X READ A-1 WRITE/ERASE (EXCEPT BOOT BLOCK)2 ERASE SETUP ERASE H CONFIRM3 H L H L X X X X VPPH D0h X X H L H L X X X X X 10h/40h X X H L H L X H X X VPPH Data-In Data-In Data-In H L H L X L X X VPPH Data-In X A-1 H L H L X X X X X FFh X X H L H L X X X X X 20h X X VHH L H L X X X X VPPH D0h X X H L H L H X X X VPPH D0h X X WRITE SETUP WRITE (word WRITE (byte READ mode)4 mode)4 ARRAY5 WRITE/ERASE (BOOT BLOCK)2, 7 ERASE SETUP ERASE CONFIRM3 ERASE CONFIRM3, 6 L WRITE SETUP H L H L X X X X X 10h/40h X X VHH L H L X H X X VPPH Data-In Data-In Data-In H L H L H H X X VPPH Data-In Data-In Data-In VHH L H L X L X X VPPH Data-In X A-1 H L H L H L X X VPPH Data-In X A-1 H L H L X X X X X FFh X X Manufacturer Compatibility (word mode)10 H L L H X H L VID X 89h 00h – Manufacturer Compatibility (byte mode) H L L H X L L VID X 89h High-Z X Device (word mode, top boot)10 H L L H X H H VID X 9Ch 88h – Device (byte mode, top boot) H L L H X L H VID X 9Ch High-Z X Device (word mode, bottom boot)10 H L L H X H H VID X 9Dh 88h – Device (byte mode, bottom boot) H L L H X L H VID X 9Dh High-Z X WRITE (word mode)4 WRITE (word mode)4, 6 WRITE (byte mode)4 WRITE (byte mode)4, 6 READ ARRAY5 DEVICE IDENTIFICATION8, 9 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. L = VIL (LOW), H = VIH (HIGH), X = VIL or VIH (“Don’t Care”). VPPH = VPPH1 = 3.3V or VPPH2 = 5V. Operation must be preceded by ERASE SETUP command. Operation must be preceded by WRITE SETUP command. The READ ARRAY command must be issued before reading the array after writing or erasing. When WP# = VIH, RP# may be at VIH or VHH. VHH = 12V. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command. A1–A8, A10–A18 = VIL. Value reflects DQ8–DQ15. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY TRUTH TABLE (MT28F008B3)1 RP# CE# OE# WE# WP# A0 A9 VPP DQ0–DQ7 Standby FUNCTION H H X X X X X X High-Z RESET L X X X X X X X High-Z READ H L L H X X X X Data-Out Output Disable H L H H X X X X High-Z H L H L X X X X 20h H L H L X X X VPPH D0h WRITE SETUP H L H L X X X X 10h/40h WRITE4 H L H L X X X VPPH Data-In H L H L X X X X FFh H L H L X X X X 20h READ WRITE/ERASE (EXCEPT BOOT BLOCK)2 ERASE SETUP ERASE READ CONFIRM3 ARRAY5 WRITE/ERASE (BOOT BLOCK)2, 7 ERASE SETUP ERASE CONFIRM3 VHH L H L X X X VPPH D0h ERASE CONFIRM3, 6 H L H L H X X VPPH D0h WRITE SETUP H L H L X X X X 10h/40h WRITE4 VHH L H L X X X VPPH Data-In WRITE4, 6 H L H L H X X VPPH Data-In READ ARRAY5 H L H L X X X X FFh Manufacturer Compatibility H L L H X L VID X 89h Device (top boot) H L L H X H VID X 98h Device (bottom boot) H L L H X H VID X 99h DEVICE NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. IDENTIFICATION8, 9 L = VIL, H = VIH, X = VIL or VIH. VPPH = VPPH1 = 3.3V or VPPH2 = 5V. Operation must be preceded by ERASE SETUP command. Operation must be preceded by WRITE SETUP command. The READ ARRAY command must be issued before reading the array after writing or erasing. When WP# = VIH, RP# may be at VIH or VHH. VHH = 12V. VID = 12V; may also be read by issuing the IDENTIFY DEVICE command. A1–A8, A10–A19 = VIL. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 6 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FUNCTIONAL DESCRIPTION HARDWARE-PROTECTED BOOT BLOCK This block of the memory array can be erased or written only when the RP# pin is taken to VHH or when the WP# pin is brought HIGH. (The WP# pin does not apply to the SOP package.) This provides additional security for the core firmware during in-system firmware updates should an unintentional power fluctuation or system reset occur. The MT28F800B3 and MT28F008B3 are available with the boot block starting at the bottom of the address space (“B” suffix) and the top of the address space (“T” suffix). The MT28F800B3 and MT28F008B3 Flash devices incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. These memory blocks are read, written and erased with commands to the command execution logic (CEL). The CEL controls the operation of the internal state machine (ISM), which completely controls all WRITE, BLOCK ERASE and VERIFY operations. The ISM protects each memory location from over-erasure and optimizes each memory location for maximum data retention. In addition, the ISM greatly simplifies the control necessary for writing the device insystem or in an external programmer. The Functional Description provides detailed information on the operation of the MT28F800B3 and MT28F008B3 and is organized into these sections: • • • • • • • • • • • SELECTABLE BUS SIZE (MT28F800B3) The MT28F800B3 allows selection of an 8-bit (1 Meg x 8) or 16-bit (512K x 16) data bus for reading and writing the memory. The BYTE# pin is used to select the bus width. In the x16 configuration, control data is read or written only on the lower eight bits (DQ0–DQ7). Data written to the memory array utilizes all active data pins for the selected configuration. When the x8 configuration is selected, data is written in byte form; when the x16 configuration is selected, data is written in word form. Overview Memory Architecture Output (READ) Operations Input Operations Command Set ISM Status Register Command Execution Error Handling WRITE/ERASE Cycle Endurance Power Usage Power-Up INTERNAL STATE MACHINE (ISM) BLOCK ERASE and BYTE/WORD WRITE timing are simplified with an ISM that controls all erase and write algorithms in the memory array. The ISM ensures protection against overerasure and optimizes write margin to each cell. During WRITE operations, the ISM automatically increments and monitors WRITE attempts, verifies write margin on each memory cell and updates the ISM status register. When BLOCK ERASE is performed, the ISM automatically overwrites the entire addressed block (eliminates overerasure), increments and monitors ERASE attempts, and sets bits in the ISM status register. OVERVIEW SMART 3 TECHNOLOGY (B3) Smart 3 operation allows maximum flexibility for insystem READ, WRITE and ERASE operations. WRITE and ERASE operations may be executed with a VPP voltage of 3.3V or 5V. Due to process technology advances, 5V V PP is optimal for application and production programming. ISM STATUS REGISTER The ISM status register enables an external processor to monitor the status of the ISM during WRITE and ERASE operations. Two bits of the 8-bit status register are set and cleared entirely by the ISM. These bits indicate whether the ISM is busy with an ERASE or WRITE task and when an ERASE has been suspended. Additional error information is set in three other bits: VPP status, write status and erase status. ELEVEN INDEPENDENTLY ERASABLE MEMORY BLOCKS The MT28F800B3 and MT28F008B3 are organized into eleven independently erasable memory blocks that allow portions of the memory to be erased without affecting the rest of the memory data. A special boot block is hardware-protected against inadvertent erasure or writing by requiring either a super-voltage on the RP# pin or driving the WP# pin HIGH. (The WP# pin does not apply to the SOP package.) One of these two conditions must exist along with the VPP voltage (3.3V or 5V) on the VPP pin before a WRITE or ERASE is performed on the boot block. The remaining blocks require that only the VPP voltage be present on the VPP pin before writing or erasing. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 COMMAND EXECUTION LOGIC (CEL) The CEL receives and interprets commands to the device. These commands control the operation of the ISM and the read path (i.e., memory array, ID register or status register). Commands may be issued to the CEL 7 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY while the ISM is active. However, there are restrictions on what commands are allowed in this condition. See the Command Execution section for more detail. tion is block-oriented. All READ and WRITE operations are done on a random-access basis. The boot block is protected from unintentional ERASE or WRITE with a hardware protection circuit which requires that a super-voltage be applied to RP# or that the WP# pin be driven HIGH before erasure is commenced. The boot block is intended for the core firmware required for basic system functionality. The remaining ten blocks do not require that either of these two conditions be met before WRITE or ERASE operations. DEEP POWER-DOWN MODE To allow for maximum power conservation, the MT28F800B3 and MT28F008B3 feature a very low current, deep power-down mode. To enter this mode, the RP# pin is taken to VSS ±0.2V. In this mode, the current draw is a maximum of 8µA at 3.3V VCC. Entering deep power-down also clears the status register and sets the ISM to the read array mode. BOOT BLOCK The hardware-protected boot block provides extra security for the most sensitive portions of the firmware. This 16KB block may only be erased or written when the RP# pin is at the specified boot block unlock voltage (VHH) of 12V or when the WP# pin is HIGH. During a WRITE or ERASE of the boot block, the RP# pin must be held at VHH or the WP# pin held HIGH until the WRITE or ERASE is completed. (The WP# pin does not apply to the SOP package.) The VPP pin must be at VPPH (3.3V or 5V) when the boot block is written to or erased. MEMORY ARCHITECTURE The MT28F800B3 and MT28F008B3 memory array architecture is designed to allow sections to be erased without disturbing the rest of the array. The array is divided into eleven addressable blocks that vary in size and are independently erasable. When blocks rather than the entire array are erased, total device endurance is enhanced, as is system flexibility. Only the ERASE func- Figure 1 Memory Address Maps WORD ADDRESS BYTE ADDRESS WORD ADDRESS 7FFFFh FFFFFh 7FFFFh FFFFFh 7E000h 7DFFFh 7D000h 7CFFFh 7C000h 7BFFFh FC000h FBFFFh FA000h F9FFFh F8000h F7FFFh 70000h 6FFFFh E0000h DFFFFh 60000h 5FFFFh C0000h BFFFFh 50000h 4FFFFh A0000h 9FFFFh 40000h 3FFFFh 80000h 7FFFFh 30000h 2FFFFh 60000h 5FFFFh 20000h 1FFFFh 40000h 3FFFFh 10000h 0FFFFh 20000h 1FFFFh 00000h 00000h BYTE ADDRESS 16KB Boot Block 128KB Main Block 70000h 6FFFFh E0000h DFFFFh 60000h 5FFFFh C0000h BFFFFh 50000h 4FFFFh A0000h 9FFFFh 40000h 3FFFFh 80000h 7FFFFh 30000h 2FFFFh 60000h 5FFFFh 20000h 1FFFFh 40000h 3FFFFh 10000h 0FFFFh 20000h 1FFFFh 04000h 03FFFh 03000h 02FFFh 02000h 01FFFh 08000h 07FFFh 06000h 05FFFh 04000h 03FFFh 00000h 00000h 128KB Main Block 8KB Parameter Block 96KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 128KB Main Block 96KB Main Block 8KB Parameter Block 128KB Main Block 8KB Parameter Block 128KB Main Block 16KB Boot Block Bottom Boot MT28F008B3/800B3xx-xxB 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 8KB Parameter Block Top Boot MT28F008B3/800B3xx-xxT 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY STATUS REGISTER Performing a READ of the status register requires the same input sequencing as a READ of the array except that the address inputs are “Don’t Care.” The status register contents are always output on DQ0– DQ7, regardless of the condition of BYTE# on the MT28F800B3. DQ8–DQ15 are LOW when BYTE# is HIGH, and DQ8–DQ14 are High-Z when BYTE# is LOW. Data from the status register is latched on the falling edge of OE# or CE#, whichever occurs last. If the contents of the status register change during a READ of the status register, either OE# or CE# may be toggled while the other is held LOW to update the output. Following a WRITE or ERASE, the device automatically enters the status register read mode. In addition, a READ during a WRITE or ERASE produces the status register contents on DQ0–DQ7. When the device is in the erase suspend mode, a READ operation produces the status register contents until another command is issued. In certain other modes, READ STATUS REGISTER may be given to return to the status register read mode. All commands and their operations are described in the Command Set and Command Execution sections. The MT28F800B3 and MT28F008B3 are available in two configurations and top or bottom boot block. The top boot block version supports processors of the x86 variety. The bottom boot block version is intended for 680X0 and RISC applications. Figure 1 illustrates the memory address maps associated with these two versions. PARAMETER BLOCKS The two 8KB parameter blocks store less sensitive and more frequently changing system parameters and also may store configuration or diagnostic coding. These blocks are enabled for erasure when the VPP pin is at VPPH. No super-voltage unlock or WP# control is required. MAIN MEMORY BLOCKS The eight remaining blocks are general-purpose memory blocks and do not require a super-voltage on RP# or WP# control to be erased or written. These blocks are intended for code storage, ROM-resident applications or operating systems that require in-system update capability. OUTPUT (READ) OPERATIONS The MT28F800B3 and MT28F008B3 feature three different types of READs. Depending on the current mode of the device, a READ operation produces data from the memory array, status register or device identification register. In each of these three cases, the WE#, CE# and OE# inputs are controlled in a similar manner. Moving between modes to perform a specific READ is described in the Command Execution section. IDENTIFICATION REGISTER A READ of the two 8-bit device identification registers requires the same input sequencing as a READ of the array. WE# must be HIGH, and OE# and CE# must be LOW. However, ID register data is output only on DQ0– DQ7, regardless of the condition of BYTE# on the MT28F800B3. A0 is used to decode between the two bytes of the device ID register; all other address inputs are “Don’t Care.” When A0 is LOW, the manufacturer compatibility ID is output, and when A0 is HIGH, the device ID is output. DQ8–DQ15 are High-Z when BYTE# is LOW. When BYTE# is HIGH, DQ8–DQ15 are 00h when the manufacturer compatibility ID is read and 88h when the device ID is read. To get to the identification register read mode, READ IDENTIFICATION may be issued while the device is in certain other modes. In addition, the identification register read mode can be reached by applying a super-voltage (VID) to the A9 pin. Using this method, the ID register can be read while the device is in any mode. When A9 is returned to VIL or VIH, the device returns to the previous mode. MEMORY ARRAY To read the memory array, WE# must be HIGH, and OE# and CE# must be LOW. Valid data is output on the DQ pins when these conditions have been met, and a valid address is given. Valid data remains on the DQ pins until the address changes, or until OE# or CE# goes HIGH, whichever occurs first. The DQ pins continue to output new data after each address transition as long as OE# and CE# remain LOW. The MT28F800B3 features selectable bus widths. When the memory array is accessed as a 512K x 16, BYTE# is HIGH, and data is output on DQ0–DQ15. To access the memory array as a 1 Meg x 8, BYTE# must be LOW, DQ8– DQ14 must be High-Z, and all data must be output on DQ0–DQ7. The DQ15/(A - 1) pin becomes the lowest order address input so that 1,048,576 locations can be read. After power-up or RESET, the device is automatically in the array read mode. All commands and their operations are covered in the Command Set and Command Execution sections. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 INPUT OPERATIONS The DQ pins are used either to input data to the array or to input a command to the CEL. A command input issues an 8-bit command to the CEL to control the mode of operation of the device. A WRITE is used to input data to the memory array. The following section de- 9 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY scribes both types of inputs. More information describing how to use the two types of inputs to write or erase the device is provided in the Command Execution section. RP# pin be at VHH or WP# be HIGH. A0–A18 (A19) provide the address to be written, while the data to be written to the array is input on the DQ pins. The data and addresses are latched on the rising edge of CE# (CE#-controlled) or WE# (WE#-controlled), whichever occurs first. A WRITE must be preceded by a WRITE SETUP command. Details on how to input data to the array are described in the Write Sequence section. Selectable bus sizing applies to WRITEs as it does to READs on the MT28F800B3. When BYTE# is LOW (byte mode), data is input on DQ0–DQ7, DQ8–DQ14 are HighZ, and DQ15 becomes the lowest order address input. When BYTE# is HIGH (word mode), data is input on DQ0– DQ15. COMMANDS To perform a command input, OE# must be HIGH, and CE# and WE# must be LOW. Addresses are “Don’t Care” but must be held stable, except during an ERASE CONFIRM (described in a later section). The 8-bit command is input on DQ0–DQ7, while DQ8–DQ15 are “Don’t Care” on the MT28F800B3. The command is latched on the rising edge of CE# (CE#-controlled) or WE# (WE#controlled), whichever occurs first. The condition of BYTE# on the MT28F800B3 has no effect on a command input. COMMAND SET To simplify writing of the memory blocks, the MT28F800B3 and MT28F008B3 incorporate an ISM that controls all internal algorithms for writing and erasing the floating gate memory cells. An 8-bit command set is used to control the device. Details on how to sequence commands are provided in the Command Execution section. Table 1 lists the valid commands. MEMORY ARRAY A WRITE to the memory array sets the desired bits to logic 0s but cannot change a given bit to a logic 1 from a logic 0. Setting any bits to a logic 1 requires that the entire block be erased. To perform a WRITE, OE# must be HIGH, CE# and WE# must be LOW, and VPP must be set to VPPH1 or VPPH2. Writing to the boot block also requires that the Table 1 Command Set COMMAND HEX CODE DESCRIPTION RESERVED 00h This command and all unlisted commands are invalid and should not be called. These commands are reserved to allow for future feature enhancements. READ ARRAY FFh Must be issued after any other command cycle before the array can be read. It is not necessary to issue this command after power-up or RESET. IDENTIFY DEVICE 90h Allows the device and manufacturer compatibility ID to be read. A0 is used to decode between the manufacturer compatibility ID (A0 = LOW) and device ID (A0 = HIGH). READ STATUS REGISTER 70h Allows the status register to be read. Please refer to Table 2 for more information on the status register bits. CLEAR STATUS REGISTER 50h Clears status register bits 3-5, which cannot be cleared by the ISM. ERASE SETUP 20h The first command given in the two-cycle ERASE sequence. The ERASE is not completed unless followed by ERASE CONFIRM. ERASE CONFIRM/RESUME D0h The second command given in the two-cycle ERASE sequence. Must follow an ERASE SETUP command to be valid. Also used during an ERASE SUSPEND to resume the ERASE. 40h or 10h The first command given in the two-cycle WRITE sequence. The write data and address are given in the following cycle to complete the WRITE. B0h Requests a halt of the ERASE and puts the device into the erase suspend mode. When the device is in this mode, only READ STATUS REGISTER, READ ARRAY and ERASE RESUME commands may be executed. WRITE SETUP ERASE SUSPEND 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY ISM STATUS REGISTER The 8-bit ISM status register (see Table 2) is polled to check for WRITE or ERASE completion or any related errors. During or following a WRITE, ERASE or ERASE SUSPEND, a READ operation outputs the status register contents on DQ0–DQ7 without prior command. While the status register contents are read, the outputs are not be updated if there is a change in the ISM status unless OE# or CE# is toggled. If the device is not in the write, erase, erase suspend or status register read mode, READ STATUS REGISTER (70h) can be issued to view the status register contents. All of the defined bits are set by the ISM, but only the ISM and erase suspend status bits are reset by the ISM. The erase, write and VPP status bits must be cleared using CLEAR STATUS REGISTER. If the VPP status bit (SR3) is set, the CEL does not allow further WRITE or ERASE operations until the status register is cleared. This enables the user to choose when to poll and clear the status register. For example, the host system may perform multiple BYTE WRITE operations before checking the status register instead of checking after each individual WRITE. Asserting the RP# signal or powering down the device also clears the status register. Table 2 Status Register Bit Definitions STATUS BIT # ISMS ESS ES WS VPPS R 7 6 5 4 3 2–0 STATUS REGISTER BIT DESCRIPTION SR7 ISM STATUS (ISMS) 1 = Ready 0 = Busy The ISMS bit displays the active status of the state machine during WRITE or BLOCK ERASE operations. The controlling logic polls this bit to determine when the erase and write status bits are valid. SR6 ERASE SUSPEND STATUS (ESS) 1 = ERASE suspended 0 = ERASE in progress/completed Issuing an ERASE SUSPEND places the ISM in the suspend mode and sets this and the ISMS bit to “1.” The ESS bit remains “1” until an ERASE RESUME is issued. SR5 ERASE STATUS (ES) 1 = BLOCK ERASE error 0 = Successful BLOCK ERASE ES is set to “1” after the maximum number of ERASE cycles is executed by the ISM without a successful verify. ES is only cleared by a CLEAR STATUS REGISTER command or after a RESET. SR4 WRITE STATUS (WS) 1 = WORD/BYTE WRITE error 0 = Successful WORD/BYTE WRITE WS is set to “1” after the maximum number of WRITE cycles is executed by the ISM without a successful verify. WS is only cleared by a CLEAR STATUS REGISTER command or after a RESET. SR3 VPP STATUS (VPPS) 1 = No VPP voltage detected 0 = VPP present VPPS detects the presence of a VPP voltage. It does not monitor VPP continuously, nor does it indicate a valid VPP voltage. The VPP pin is sampled for 3.3V or 5V after WRITE or ERASE CONFIRM is given. VPPS must be cleared by CLEAR STATUS REGISTER or by a RESET. RESERVED Reserved for future use. SR0-2 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY COMMAND EXECUTION WRITE SEQUENCE Two consecutive cycles are needed to input data to the array. WRITE SETUP (40h or 10h) is given in the first cycle. The next cycle is the WRITE, during which the write address and data are issued and VPP is brought to VPPH. Writing to the boot block also requires that the RP# pin be brought to VHH or the WP# pin be brought HIGH at the same time VPP is brought to VPPH. The ISM now begins to write the word or byte. VPP must be held at VPPH until the WRITE is completed (SR7 = 1). While the ISM executes the WRITE, the ISM status bit (SR7) is at 0, and the device does not respond to any commands. Any READ operation produces the status register contents on DQ0–DQ7. When the ISM status bit (SR7) is set to a logic 1, the WRITE has been completed, and the device goes into the status register read mode until another command is given. After the ISM has initiated the WRITE, it cannot be aborted except by a RESET or by powering down the part. Doing either during a WRITE corrupts the data being written. If only the WRITE SETUP command has been given, the WRITE may be nullified by performing a null WRITE. To execute a null WRITE, FFh must be written Commands are issued to bring the device into different operational modes. Each mode allows specific operations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section describes the properties of each mode, and Table 3 lists all command sequences required to perform the desired operation. READ ARRAY The array read mode is the initial state of the device upon power-up and after a RESET. If the device is in any other mode, READ ARRAY (FFh) must be given to return to the array read mode. Unlike the WRITE SETUP command (40h), READ ARRAY does not need to be given before each individual READ access. IDENTIFY DEVICE IDENTIFY DEVICE (90h) may be written to the CEL to enter the identify device mode. While the device is in this mode, any READ produces the device identification when A0 is HIGH and the manufacturer compatibility identification when A0 is LOW. The device remains in this mode until another command is given. Table 3 Command Sequences COMMANDS BUS FIRST SECOND CYCLES CYCLE CYCLE REQ’D OPERATION ADDRESS DATA OPERATION ADDRESS DATA NOTES READ ARRAY 1 WRITE X FFh 1 IDENTIFY DEVICE 3 WRITE X 90h READ IA ID 2, 3 READ STATUS REGISTER 2 WRITE X 70h READ X SRD 4 CLEAR STATUS REGISTER 1 WRITE X 50h 5, 6 ERASE SETUP/CONFIRM 2 WRITE X 20h WRITE BA D0h ERASE SUSPEND/RESUME 2 WRITE X B0h WRITE X D0h WRITE SETUP/WRITE 2 WRITE X 40h WRITE WA WD 6, 7 ALTERNATE WORD/BYTE WRITE 2 WRITE X 10h WRITE WA WD 6, 7 NOTE: 1. 2. 3. 4. 5. 6. 7. Must follow WRITE or ERASE CONFIRM commands to the CEL in order to enable Flash array READ cycles. IA = Identify Address: 00h for manufacturer compatibility ID; 01h for device ID. ID = Identify Data. SRD = Status Register Data. BA = Block Address (A12–A19). Addresses are “Don’t Care” in first cycle but must be held stable. WA = Address to be written; WD = Data to be written to WA. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 12 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY when BYTE# is LOW, or FFFFh must be written when BYTE# is HIGH. When the ISM status bit (SR7) has been set, the device is in the status register read mode until another command is issued. that either the RP# pin be set to VHH or the WP# pin be held HIGH at the same time VPP is set to VPPH. ERASE SUSPENSION The only command that may be issued while an ERASE is in progress is ERASE SUSPEND. This command enables other commands to be executed while pausing the ERASE in progress. When the device has reached the erase suspend mode, the erase suspend status bit (SR6) and ISM status bit (SR7) are set. The device may now be given a READ ARRAY, ERASE RESUME or READ STATUS REGISTER command. After READ ARRAY has been issued, any location not within the block being erased may be read. If ERASE RESUME is issued before SR6 has been set, the device immediately proceeds with the ERASE in progress. ERASE SEQUENCE Executing an ERASE sequence sets all bits within a block to logic 1. The command sequence necessary to execute an ERASE is similar to that of a WRITE. To provide added security against accidental block erasure, two consecutive command cycles are required to initiate an ERASE of a block. In the first cycle, addresses are “Don’t Care,” and ERASE SETUP (20h) is given. In the second cycle, VPP must be brought to VPPH, an address within the block to be erased must be issued, and ERASE CONFIRM (D0h) must be given. If a command other than ERASE CONFIRM is given, the write and erase status bits (SR4 and SR5) are set, and the device is in the status register read mode. After the ERASE CONFIRM (D0h) is issued, the ISM starts the ERASE of the addressed block. Any READ operation outputs the status register contents on DQ0– DQ7. VPP must be held at VPPH until the ERASE is completed (SR7 = 1). When the ERASE is completed, the device is in the status register read mode until another command is issued. Erasing the boot block also requires ERROR HANDLING After the ISM status bit (SR7) has been set, the VPP (SR3), write (SR4) and erase (SR5) status bits may be checked. If one or a combination of these three bits has been set, an error has occurred. The ISM cannot reset these three bits. To clear these bits, CLEAR STATUS REGISTER (50h) must be given. If the VPP status bit (SR3) is set, further WRITE or ERASE operations cannot resume until the status register is cleared. Table 4 lists the combination of errors. Table 4 Status Register Error Code Description1 SR5 STATUS BITS SR4 SR3 ERROR DESCRIPTION 0 0 0 No errors 0 0 1 VPP voltage error 0 1 0 WRITE error 0 1 1 WRITE error, VPP voltage not valid at time of WRITE 1 0 0 ERASE error 1 0 1 ERASE error, VPP voltage not valid at time of ERASE CONFIRM 1 1 0 Command sequencing error or WRITE/ERASE error 1 1 1 Command sequencing error, VPP voltage error, with WRITE and ERASE errors NOTE: 1. SR3-SR5 must be cleared using CLEAR STATUS REGISTER. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE ENDURANCE POWER-UP The MT28F800B3 and MT28F008B3 are designed and fabricated to meet advanced firmware storage requirements. To ensure this level of reliability, VPP must be at 3.3V ±0.3V or 5V ±10% during WRITE or ERASE cycles. Due to process technology advances, 5V VPP is optimal for application and production programming. The likelihood of unwanted WRITE or ERASE operations is minimized because two consecutive cycles are required to execute either operation. However, to reset the ISM and to provide additional protection while VCC is ramping, one of the following conditions must be met: • RP# must be held LOW until VCC is at valid functional level; or • CE# or WE# may be held HIGH and RP# must be toggled from VCC-GND-VCC. After a power-up or RESET, the status register is reset, and the device enters the array read mode. POWER USAGE The MT28F800B3 and MT28F008B3 offer several power-saving features that may be utilized in the array read mode to conserve power. Deep power-down mode is enabled by bringing RP# LOW. Current draw (ICC) in this mode is a maximum of 8µA at 3.3V VCC. When CE# is HIGH, the device enters standby mode. In this mode, maximum ICC current is 100µA at 3.3V VCC. If CE# is brought HIGH during a WRITE or ERASE, the ISM continues to operate, and the device consumes the respective active power until the WRITE or ERASE is completed. Figure 2 Power-Up/Reset Timing Diagram RP# Note 1 VCC (3.3V) t AA Address VALID VALID Data t RWH UNDEFINED NOTE: 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 14 1. VCC must be within the valid operating range before RP# goes HIGH. Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY SELF-TIMED WRITE SEQUENCE (WORD OR BYTE WRITE)1 COMPLETE WRITE STATUS-CHECK SEQUENCE Start Start (WRITE completed) WRITE 40h or 10h SR3 = 0? NO VPP Error 4, 5 NO BYTE/WORD WRITE Error5 YES SR4 = 0? VPP = 3.3V or 5V YES WRITE Word or Byte Address/Data WRITE Successful STATUS REGISTER READ SR7 = 1? NO YES Complete Status2 Check (optional) WRITE Complete 3 NOTE: 1. Sequence may be repeated for additional BYTE or WORD WRITEs. 2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is cleared. 3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued. 4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or ERASE operations are allowed by the CEL. 5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY SELF-TIMED BLOCK ERASE SEQUENCE1 COMPLETE BLOCK ERASE STATUS-CHECK SEQUENCE Start Start (ERASE completed) WRITE 20h SR3 = 0? NO VPP Error 5, 6 YES Command Sequence Error6 NO BLOCK ERASE Error6 YES VPP = 3.3V or 5V SR4, 5 = 1? NO WRITE D0h, Block Address SR5 = 0? YES ERASE Busy STATUS REGISTER READ ERASE Successful NO NO SR7 = 1? YES Complete Status 2 Check (optional) Suspend ERASE? YES Suspend 4 Sequence ERASE Resumed ERASE Complete 3 NOTE: 1. Sequence may be repeated to erase additional blocks. 2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register is cleared. 3. To return to the array read mode, the FFh command must be issued. 4. Refer to the ERASE SUSPEND flowchart for more information. 5. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE or ERASE operations are allowed by the CEL. 6. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0h (ERASE SUSPEND) VPP = 3.3V or 5V STATUS REGISTER READ SR7 = 1? NO YES SR6 = 1? NO YES ERASE Completed WRITE FFh (READ ARRAY) Done Reading? NO YES WRITE D0h (ERASE RESUME) Resume ERASE 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **VCC, input and I/O pins may transition to -2V for <20ns and VCC + 2V for <20ns. †Voltage may pulse to -2V for <20ns and 7V for <20ns. ††Voltage may pulse to -2V for <20ns and 14V for <20ns. ABSOLUTE MAXIMUM RATINGS* Voltage on VCC Supply Relative to VSS ..................................... -0.5V to +4V** Input Voltage Relative to VSS .................... -0.5V to +4V** VPP Voltage Relative to VSS ........................ -0.5V to +5.5V† RP# or A9 Pin Voltage Relative to VSS ................................ -0.5V to +12.6V†† Temperature Under Bias .......................... -10ºC to +80ºC Storage Temperature (plastic) ............... -55ºC to +125ºC Power Dissipation ......................................................... 1W ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC READ OPERATING CONDITIONS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC) PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES 3.3V Supply Voltage VCC 3 3.6 V 1 Input High (Logic 1) Voltage, all inputs VIH 2.4 VCC + 0.5 V 1 Input Low (Logic 0) Voltage, all inputs VIL -0.5 0.8 V 1 Device Identification Voltage, A9 VID 10 12.6 V 1 VPP Supply Voltage VPP -0.5 5.5 V 1 NOTES DC OPERATING CHARACTERISTICS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC) PARAMETER/CONDITION SYMBOL MIN MAX UNITS VOH VCC - 0.2 – V VOL – 0.45 V IL -1 1 µA INPUT LEAKAGE CURRENT: A9 INPUT (10V ≤ A9 ≤ 12V = VID) IID – 500 µA INPUT LEAKAGE CURRENT: RP# INPUT (10V ≤ RP# ≤ 12V = VHH) IHH – 500 µA OUTPUT LEAKAGE CURRENT (DOUT is disabled; 0V ≤ VOUT ≤ VCC) IOZ -10 10 µA OUTPUT VOLTAGE LEVELS Output High Voltage (IOH = -100µA) Output Low Voltage (IOL = 2mA) 1 INPUT LEAKAGE CURRENT Any input (0V ≤ VIN ≤ VCC); All other pins not under test = 0V NOTE: 1. All voltages referenced to VSS. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 18 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY CAPACITANCE (TA = 25ºC; f = 1 MHz) PARAMETER/CONDITION SYMBOL MAX UNITS Input Capacitance CI 9 pF Output Capacitance CO 12 pF NOTES READ AND STANDBY CURRENT DRAIN1 Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC) PARAMETER/CONDITION SYMBOL MAX READ CURRENT: WORD-WIDE (CE# ≤ 0.2V; OE# VCC - 0.2V; f = 5 MHz; Other inputs ≤ 0.2V or VCC - 0.2V; RP# VCC - 0.2V) UNITS NOTES ICC1 15 mA 2, 3 READ CURRENT: BYTE-WIDE (CE# ≤ 0.2V; OE# VCC - 0.2V; f = 5 MHz; Other inputs ≤ 0.2V or VCC - 0.2V; RP# = VCC - 0.2V) ICC2 15 mA 2, 3 STANDBY CURRENT: TTL INPUT LEVELS VCC power supply standby current (CE# = RP# = VIH; Other inputs = VIL or VIH) ICC3 2 mA STANDBY CURRENT: CMOS INPUT LEVELS VCC power supply standby current (CE# = RP# = VCC - 0.2V) ICC4 100 µA DEEP POWER-DOWN CURRENT: VCC SUPPLY (RP# = VSS ±0.2V) ICC6 8 µA STANDBY OR READ CURRENT: VPP SUPPLY (VPP ≤ 5.5V) IPP1 ±15 µA DEEP POWER-DOWN CURRENT: VPP SUPPLY (RP# = VSS ±0.2V) IPP2 5 µA NOTE: 1. VCC = MAX VCC during ICC tests. 2. ICC is dependent on cycle rates. 3. ICC is dependent on output loading. Specified values are obtained with the outputs open. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 19 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS1 Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +3.3V ±0.3V AC CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or CE# HIGH to output in High-Z Output hold time from OE#, CE# or address change RP# LOW pulse width SYMBOL tRC tACE tAOE tAA tRWH tOD tOH tRP -9/-9 ET MIN MAX 90 90 40 90 1,000 25 0 150 UNITS ns ns ns ns ns ns ns ns NOTES 2 2 NOTE: 1. Measurements tested under AC Test Conditions. 2. OE# may be delayed by tACE minus tAOE after CE# falls before tACE is affected. AC TEST CONDITIONS Input pulse levels ...................................................... 0V to 3V Input rise and fall times ................................................ <10ns Input timing reference level ........................................... 1.5V Output timing reference level ........................................ 1.5V Output load ................................... 1 TTL gate and CL = 50pF 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY WORD-WIDE READ CYCLE1 VIH A0–A18/(A19) VALID ADDRESS VIL tRC tAA VIH CE# VIL tACE VIH OE# VIL VIH WE# VIL tOD tAOE tOH VIH DQ0–DQ15 VALID DATA VIL tRWH VIH RP# VIL DON’T CARE UNDEFINED TIMING PARAMETERS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) Extended Temperature (-40ºC ≤ TA ≤ +85ºC) SYMBOL tRC -9/-9 ET MIN MAX 90 UNITS ns SYMBOL tRWH tACE 90 ns tOD tAOE 40 90 ns ns tOH tAA -9/-9 ET MIN MAX 1,000 25 0 UNITS ns ns ns NOTE: 1. BYTE# = HIGH (MT28F800B3 only). 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY BYTE-WIDE READ CYCLE1 VIH A0–A18/(A19) VALID ADDRESS VIL tRC tAA VIH CE# VIL tACE VIH OE# VIL VIH WE# VIL tOD tAOE tOH VIH DQ0–DQ7 VALID DATA VIL VIH DQ8–DQ14 VIL HIGH-Z tRWH VIH RP# VIL DON’T CARE UNDEFINED TIMING PARAMETERS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) Extended Temperature (-40ºC ≤ TA ≤ +85ºC) -9/-9 ET SYMBOL tRC tACE MIN 90 tAOE tAA MAX -9/-9 ET 90 UNITS ns ns 40 90 ns ns SYMBOL tRWH tOD tOH MIN 0 MAX 1,000 25 UNITS ns ns ns NOTE: 1. BYTE# = LOW (MT28F800B3 only). 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY RECOMMENDED DC WRITE/ERASE CONDITIONS1 Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +3.3V ±0.3V PARAMETER/CONDITION SYMBOL MIN VPP WRITE/ERASE lockout voltage VPPLK – MAX UNITS NOTES 1.5 V 2 VPP voltage during WRITE/ERASE operation VPPH1 3.0 3.6 V 3 VPP voltage during WRITE/ERASE operation VPPH2 4.5 5.5 V Boot block unlock voltage VHH 10 12.6 V VCC WRITE/ERASE lockout voltage VLKO 2 – V WRITE/ERASE CURRENT DRAIN4 Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC - TA - +85ºC); VCC = +3.3V ±0.3V 3.3V VPP 5V VPP PARAMETER/CONDITION SYMBOL MAX MAX WORD WRITE CURRENT: VCC SUPPLY ICC7 20 20 mA 5 WORD WRITE CURRENT: VPP SUPPLY IPP3 20 20 mA 5 BYTE WRITE CURRENT: VCC SUPPLY ICC8 20 20 mA 6 BYTE WRITE CURRENT: VPP SUPPLY IPP4 20 20 mA 6 ERASE CURRENT: VCC SUPPLY ICC9 25 25 mA ERASE CURRENT: VPP SUPPLY IPP5 25 30 mA ERASE SUSPEND CURRENT: VCC SUPPLY (ERASE suspended) ICC10 8 10 mA ERASE SUSPEND CURRENT: VPP SUPPLY (ERASE suspended) IPP6 200 200 µA NOTE: 1. 2. 3. 4. 5. 6. 7. UNITS NOTES 7 WRITE operations are tested at VPP voltages equal to or less than the previous ERASE. Absolute WRITE/ERASE protection when VPP ≤ VPPLK. When 3.3V VCC and VPP are used, VCC cannot exceed VPP by more than 500mV during WRITE and ERASE operations. All currents are in RMS unless otherwise noted. Applies to MT28F800B3 only. Applies to MT28F008B3 and MT28F800B3 with BYTE# = LOW. Parameter is specified when device is not accessed. Actual current draw will be I CC10 plus read current if a READ is executed while the device is in erase suspend mode. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE# (CE#)-CONTROLLED WRITES Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +3.3V ±0.3V AC CHARACTERISTICS PARAMETER WRITE cycle time WE# (CE#) HIGH pulse width WE# (CE#) pulse width Address setup time to WE# (CE#) HIGH Address hold time from WE# (CE#) HIGH Data setup time to WE# (CE#) HIGH Data hold time from WE# (CE#) HIGH CE# (WE#) setup time to WE# (CE#) LOW CE# (WE#) hold time from WE# (CE#) HIGH VPP setup time to WE# (CE#) HIGH VPP setup time to WE# (CE#) HIGH RP# HIGH to WE# (CE#) LOW delay RP# at VHH or WP# HIGH setup time to WE# (CE#) HIGH WRITE duration (WORD or BYTE WRITE) Boot BLOCK ERASE duration Parameter BLOCK ERASE duration Main BLOCK ERASE duration WE# (CE#) HIGH to busy status (SR7 = 0) VPP hold time from status data valid RP# at VHH or WP# HIGH hold time from status data valid Boot block relock delay time SYMBOL tWC tWPH (tCPH) tWP (tCP) tAS tAH tDS tDH tCS (tWS) tCH (tWH) tVPS1 tVPS2 tRS tRHS tWED1 tWED2 tWED3 tWED4 tWB tVPH tRHH tREL -9/-9 ET MIN MAX 90 20 50 50 0 50 0 0 0 200 100 1,000 100 2 100 100 500 200 0 0 100 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns µs ms ms ms ns ns ns ns NOTES 1 2 3 5 5 5 5 4 5 3 6 WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS 3.3V VPP 5V VPP PARAMETER TYP MAX TYP MAX UNITS NOTES Boot/parameter BLOCK ERASE time 0.5 7 0.4 7 Main BLOCK ERASE time 2.8 14 1.5 14 s 7 Main BLOCK WRITE time (byte mode) 1.5 – 1 – s 7, 8, 9 Main BLOCK WRITE time (word mode) 1.5 – 1 – s 7, 8, 9 NOTE: 1. 2. 3. 4. 5. 6. 7. 8. 9. s 7 Measured with VPP = VPPH1 = 3.3V. Measured with VPP = VPPH2 = 5V. RP# should be held at VHH or WP# held HIGH until boot block WRITE or ERASE is complete. Polling status register before tWB is met may falsely indicate WRITE or ERASE completion. WRITE/ERASE times are measured to valid status register data (SR7 = 1). tREL is required to relock boot block after WRITE or ERASE to boot block. Typical values measured at TA = +25ºC. Assumes no system overhead. Typical WRITE times use checkerboard data pattern. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 24 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE WE#-CONTROLLED WRITE/ERASE VIH A0–A18/(A19) Note 1 VIL tAS AIN tAS tAH tAH VIH CE# VIL tCS tCH VIH OE# VIL tWC tWP tWED1/2/3/4 tWPH VIH WE# DQ0–DQ7/ DQ0–DQ15 2 tWB VIL VIH tDS CMD in VIL VHH tDH tDH tDS Status (SR7=0) CMD/ Data-in tRS tRHS Status (SR7=1) tRHH CMD in [Unlock boot block] VIH RP# 3 VIL [Unlock boot block] VIH WP# 3 VIL tVPS1 tVPS2 VPPH2 VPP tVPH [5V VPP] [3.3V VPP] VPPH1 VIL WRITE or ERASE (block) address asserted, and WRITE data or ERASE CONFIRM issued WRITE SETUP or ERASE SETUP input WRITE or ERASE executed, status register checked for completion Command for next operation issued DON’T CARE TIMING PARAMETERS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) Extended Temperature (-40ºC ≤ TA ≤ +85ºC) SYMBOL tWC tWPH tWP tAS tAH tDS tDH tCS tCH tVPS1 -9/-9 ET MIN MAX 90 UNITS ns SYMBOL tVPS2 20 50 ns ns tRS 50 0 50 ns ns ns tWED1 0 0 ns ns tWED4 0 200 ns ns tVPH tRHS tWED2 tWED3 tWB -9/-9 ET MIN MAX UNITS 100 ns 1,000 100 2 ns ns µs 100 100 ms ms 500 200 ms ns 0 0 ns ns tRHH NOTE: 1. Address inputs are “Don’t Care” but must be held stable. 2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit. 3. Either RP# at VHH or WP# HIGH unlocks the boot block. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 25 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE CE#-CONTROLLED WRITE/ERASE VIH A0–A18/(A19) Note 1 VIL tAS AIN tAS tAH tAH VIH WE# VIL tWS tWH VIH OE# VIL tWC tCP tWED1/2/3/4 tCPH VIH CE# DQ0–DQ7/ DQ0–DQ15 2 VIL VIH VIL VHH tWB tDH tDS tDH tDS CMD in Status (SR7=0) CMD/ Data-in tRS tRHS Status (SR7=1) tRHH CMD in [Unlock boot block] VIH RP# 3 VIL [Unlock boot block] VIH WP# 3 VIL tVPS1 tVPS2 VPPH2 VPP tVPH [5V VPP] [3.3V VPP] VPPH1 VIL WRITE or ERASE (block) address asserted, and WRITE data or ERASE CONFIRM issued WRITE SETUP or ERASE SETUP input WRITE or ERASE executed, status register checked for completion Command for next operation issued DON’T CARE TIMING PARAMETERS Commercial Temperature (0ºC ≤ TA ≤ +70ºC) Extended Temperature (-40ºC ≤ TA ≤ +85ºC) SYMBOL tWC tCPH tCP tAS tAH tDS tDH tWS tWH tVPS1 -9/-9 ET MIN MAX 90 UNITS ns SYMBOL tVPS2 20 50 ns ns tRS 50 0 50 ns ns ns tWED1 0 0 ns ns tWED4 0 200 ns ns tVPH tRHS tWED2 tWED3 tWB -9/-9 ET MIN MAX UNITS 100 ns 1,000 100 2 ns ns µs 100 100 ms ms 500 200 ms ns 0 0 ns ns tRHH NOTE: 1. Address inputs are “Don’t Care” but must be held stable. 2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit. 3. Either RP# at VHH or WP# HIGH unlocks the boot block. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 26 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY 40-PIN PLASTIC TSOP I (10mm x 20mm) .795 (20.20) .780 (19.80) .727 (18.47) .0197 (0.50) TYP .010 (0.25) .721 (18.31) 1 40 PIN #1 INDEX .397 (10.08) .391 (9.93) .010 (0.25) .006 (0.15) 20 21 .010 (0.25) .004 (0.10) .007 (0.18) .005 (0.13) GAGE PLANE .047 (1.20) MAX SEE DETAIL A .008 (0.20) .002 (0.05) .024 (0.60) .016 (0.40) DETAIL A .0315 (0.80) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 27 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY 48-PIN PLASTIC TSOP I (12mm x 20mm) .795 (20.20) .780 (19.80) .727 (18.47) .0197 (0.50) TYP .010 (0.25) .721 (18.31) 1 48 PIN #1 INDEX .475 (12.07) .469 (11.91) .010 (0.25) .006 (0.15) 25 24 .010 (0.25) .004 (0.10) .007 (0.18) .005 (0.12) SEE DETAIL A GAGE PLANE .047 (1.20) MAX .008 (0.20) .002 (0.05) .024 (0.60) .016 (0.40) DETAIL A .0315 (0.80) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 28 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY 44-PIN PLASTIC SOP1 (600 mil) 1.113 (28.27) 1.107 (28.12) .050 (1.27) TYP .007 (0.18) .020 (0.50) .015 (0.38) .005 (0.13) .643 (16.34) .620 (15.74) .499 (12.68) .493 (12.52) PIN #1 INDEX .030 (0.76) SEE DETAIL A .004 (0.10) .016 (0.40) .010 (0.25) .106 (2.70) MAX GAGE PLANE .010 (0.25) DETAIL A .0315 (0.80) (ROTATED 90 CW) .066 (1.72) NOTE: 1. Not recommended for new designs. 2. All dimensions in inches (millimeters) MAX or typical where noted. MIN 3. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 The Micron logo and the M logo are trademarks of Micron Technology, Inc. 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 29 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY REVISION HISTORY Rev. 3, Pub. 10/01 ................................................................................................................................................... 10/01 • Updated input capacitance spec • Changed access time to 90ns Rev. 2 ......................................................................................................................................................................................... 3/01 • Changed to 0.18µm process • 12V VPP no longer supported • 10V ≤ VHH ≤ 12V • VOH ≤ VCC - 0.2V • tRWH changed to 1µs from 800ns • tAH changed to 10ns from 0ns • AC test output load CL changed to 50pF • Typical main BLOCK ERASE time changed to 1.5s from 1s • Typical main BLOCK WRITE time (byte mode) changed to 1s from 0.5s • Typical main BLOCK WRITE time (word mode) changed to 1s from 0.5s • MT28F800B3 only available in WG and SG packages • MT28F008B3 only available in VG package • Added 80ns access time for commercial and extended temperature ranges 8Mb Smart 3 Boot Block Flash Memory Q10_3.p65 – Rev. 3, Pub. 10/01 30 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc.