MOSEL V53C16258H

MOSEL VITELIC
PRELIMINARY
V53C16258H
HIGH PERFORMANCE
256K X 16 EDO PAGE MODE
CMOS DYNAMIC RAM
OPTIONAL SELF REFRESH
HIGH PERFORMANCE
25
30
35
40
45
50
Max. RAS Access Time, (tRAC)
25 ns
30 ns
35 ns
40 ns
45 ns
50 ns
Max. Column Address Access Time, (tCAA)
13 ns
16 ns
18 ns
20 ns
22 ns
24 ns
Min. Extended Data Out Mode Cycle Time, (tPC)
10 ns
12 ns
14 ns
15 ns
17 ns
19 ns
Min. Read/Write Cycle Time, (tRC)
45 ns
60 ns
70 ns
75 ns
80 ns
90 ns
Features
Description
■ 256K x 16-bit organization
■ EDO Page Mode for a sustained data rate of
100 MHz
■ RAS access time: 25, 30, 35, 40, 45, 50 ns
■ Dual CAS Inputs
■ Low power dissipation
■ Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
■ Optional Self Refresh (V53C16258SH)
■ Refresh Interval: 512 cycles/8 ms
■ Available in 40-pin 400 mil SOJ and 40/44L-pin
400 mil TSOP-II packages
■ Single +5V ±10% Power Supply
■ TTL Interface
The V53C16258H is a high speed 262,144 x 16
bit high performance CMOS dynamic random
access memory. The V53C16258H offers a
combination of unique features including: EDO
Page Mode operation for higher sustained
bandwidth with Page Mode cycle times as short as
10ns. All inputs are TTL compatible. Input and
output capicatance is significantly lowered to
increase performance and minimize loading. These
features make the V53C16258H ideally suited for a
wide variety of high performance computer systems
and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
K
T
25
30
35
40
45
50
Std.
Temperature
Mark
0°C to 70°C
•
•
•
•
•
•
•
•
•
Blank
–40°C to +85°C
•
•
•
•
•
•
•
•
•
I
V53C16258H Rev. 3.8 November 1999
1
V53C16258H
MOSEL VITELIC
Part Name
Self Refresh
Supply Voltage
Package
Speed
V53C16258HKxx
No Self Refresh
5V
SOJ
25/30/35/40/45/50
V53C16258HTxx
No Self Refresh
5V
TSOP
25/30/35/40/45/50
V53C16258SHKxx
Optional Standard Self Refresh (8ms)
5V
SOJ
25/30/35/40/45/50
V53C16258SHTxx
Optional Standard Self Refresh (8ms)
5V
TSOP
25/30/35/40/45/50
V
40-Pin SOJ
PIN CONFIGURATION
Top View
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
40
2
39
3
38
4
37
5
36
6
35
7
34
8
33
9
32
10
31
11
30
12
29
13
28
14
27
15
26
16
25
17
24
18
23
19
22
20
21
5
3
FAMILY
C
16
2
Row Address Strobe
UCAS
Column Address Strobe/Upper Byte Control
LCAS
Column Address Strobe/Lower Byte Control
WE
Write Enable
VSS
0V Supply
NC
No Connect
V53C16258H Rev. 3.8 November 1999
TEMP.
BLANK (0°C to 70°C)
I (–40°C to +85°C)
BLANK (NORMAL)
(25 ns)
(30 ns)
(35 ns)
(40 ns)
(45 ns)
16258H-01
(50 ns)
PWR.
25
30
35
40
45
50
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
RAS
+5V Supply
SPEED
( t RAC)
40/44 Pin Plastic TSOP-II
PIN CONFIGURATION
Top View
Address Inputs
VCC
PKG
K (SOJ)
T (TSOP-II)
A0–A8
Data Input, Output
H
H (5V)
Pin Names
I/O1–I/O16
S
S (OPTIONAL STANDARD
SELF REFRESH)
16258H-02
Output Enable
8
DEVICE
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
OE
5
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
16258H-03
2
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
Vss
V53C16258H
MOSEL VITELIC
Absolute Maximum Ratings*
Capacitance*
TA = 25°C, VCC = 5 V ± 10%, VSS = 0 V
Ambient Temperature
Under Bias ..................................... –10°C to +80°C
Storage Temperature (plastic) ..... –55°C to +125°C
Voltage Relative to VSS .................–1.0 V to +7.0 V
Data Output Current ..................................... 50 mA
Power Dissipation .......................................... 1.0 W
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Symbol
Parameter
Typ.
Max.
Unit
CIN1
Address Input
3
4
pF
CIN2
RAS, CAS, WE, OE
4
5
pF
COUT
Data Input/Output
5
7
pF
* Note: Capacitance is sampled and not 100% tested
Block Diagram
256K x 16
OE
WE
UCAS
LCAS
RAS
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
WE CLOCK
GENERATOR
OE CLOCK
GENERATOR
VCC
VSS
I/O 1
DATA I/O BUS
I/O 2
COLUMN DECODERS
Y0 -Y8
SENSE AMPLIFIERS
I/O 3
I/O
BUFFER
I/O 6
REFRESH
COUNTER
I/O 7
I/O 8
I/O 9
512 x 16
•
•
•
A7
A8
I/O 10
I/O 11
X0 -X8
ROW
DECODERS
A1
ADDRESS BUFFERS
AND PREDECODERS
9
A0
I/O 12
I/O 13
512
MEMORY
ARRAY
256K x 16
I/O 14
I/O 15
I/O 16
16258H-04
V53C16258H Rev. 3.8 November 1999
I/O 4
I/O 5
3
V53C16258H
MOSEL VITELIC
DC and Operating Characteristics (1-2)
TA = 0°C to 70°C, VCC = 5 V ± 10%, VSS = 0 V, unless otherwise specified.
Symbol
Parameter
Access
Time
V53C16258H
Min.
Typ.
Max.
Unit
Test Conditions
Notes
ILI
Input Leakage Current
(any input pin)
–10
10
µA
VSS ≤ VIN ≤ VCC
ILO
Output Leakage Current
(for High-Z State)
–10
10
µA
VSS≤ VOUT ≤ VCC
RAS, CAS at VIH
ICC1
VCC Supply Current,
Operating
25
260
mA
tRC = tRC (min.)
30
200
35
190
40
180
45
100
50
90
2
mA
RAS, CAS at VIH
other inputs ≥ VSS
25
260
mA
tRC = tRC (min.)
2
30
200
35
190
40
180
45
100
50
90
25
200
mA
Minimum Cycle
1, 2
30
140
35
130
40
120
45
90
50
80
ICC2
VCC Supply Current,
TTL Standby
ICC3
VCC Supply Current,
RAS-Only Refresh
ICC4
VCC Supply Current,
EDO Page Mode Operation
1, 2
ICC5
VCC Supply Current,
Standby, Output Enabled
other inputs ≥ VSS
2
mA
RAS = VIH, CAS = VIL
ICC6
VCC Supply Current,
CMOS Standby
1
mA
RAS ≥ VCC – 0.2 V,
CAS ≥ VCC– 0.2 V,
All other inputs ≥ VSS
ICC7
Self Refresh Current
400
µA
CBR Cycle with tRAS ≥ tRASS
(Min.) and CAS = VIL;
WE = VCC–0.2V; A0–A8 and
DIN = VCC–0.2V
VCC
Supply Voltage
4.5
5.5
V
VIL
Input Low Voltage
–1
0.8
V
3
VIH
Input High Voltage
2.4
VCC + 1
V
3
VOL
Output Low Voltage
0.4
V
IOL = 2 mA
VOH
Output High Voltage
V
IOH = –2 mA
V53C16258H Rev. 3.8 November 1999
5.0
2.4
4
1
V53C16258H
MOSEL VITELIC
AC Characteristics
TA = 0°C to 70°C, VCC = 5 V ± 10%, VSS = 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
25
(100 MHz)
30
35
40
45
50
#
Symbol
Parameter
1
tRAS
RAS Pulse Width
25
2
tRC
Read or Write Cycle Time
45
60
70
75
80
90
ns
3
tRP
RAS Precharge Time
15
20
25
25
25
30
ns
4
tCSH
CAS Hold Time
25
30
35
40
45
50
ns
5
tCAS
CAS Pulse Width
4
5
6
7
8
9
ns
6
tRCD
RAS to CAS Delay
10
7
tRCS
Read Command Setup Time
0
0
0
0
0
0
ns
8
tASR
Row Address Setup Time
0
0
0
0
0
0
ns
9
tRAH
Row Address Hold Time
4
5
6
7
8
9
ns
10
tASC
Column Address Setup Time
0
0
0
0
0
0
ns
11
tCAH
Column Address Hold Time
4
5
5
5
6
7
ns
12
tRSH (R)
RAS Hold Time (Read Cycle)
7
9
10
10
10
10
ns
13
tCRP
CAS to RAS Precharge Time
5
5
5
5
5
5
ns
14
tRCH
Read Command Hold Time
Referenced to CAS
0
0
0
0
0
0
ns
5
15
tRRH
Read Command Hold Time
Referenced to RAS
0
0
0
0
0
0
ns
5
16
tROH
RAS Hold Time Referenced
to OE
4
6
7
8
9
10
ns
17
tOAC
Access Time from OE
8
10
11
12
13
14
ns
18
tCAC
Access Time from CAS
8
10
11
12
13
14
ns 6, 7, 14
19
tRAC
Access Time from RAS
25
30
35
40
45
50
ns
20
tCAA
Access Time from Column
Address
13
16
18
20
22
24
ns 6, 7, 10
21
tLZ
OE or CAS to Low-Z Output
0
22
tHZ
OE or CAS to High-Z Output
0
23
tAR
Column Address Hold Time
from RAS
19
24
tRAD
RAS to Column Address
Delay Time
8
25
tRSH (W)
RAS or CAS Hold Time in
Write Cycle
7
9
10
10
10
10
ns
26
tCWL
Write Command to CAS
Lead Time
5
7
8
10
13
14
ns
27
tWCS
Write Command Setup Time
0
0
0
0
0
0
ns
28
tWCH
Write Command Hold Time
4
5
5
5
6
7
ns
V53C16258H Rev. 3.8 November 1999
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
75K
17
30
75K
12
20
0
5
13
75K
24
0
0
5
23
13
35
0
14
5
10
15
75K
28
0
6
25
9
40
0
12
18
75K
32
0
6
30
17
45
0
13
19
75K
36
0
7
35
20
50
0
8
40
23
14
ns
ns
4
12
6, 8, 9
ns
16
ns
16
ns
26
ns
11
12, 13
V53C16258H
MOSEL VITELIC
AC Characteristics (Cont’d)
25
(100 MHz)
30
35
40
45
50
#
Symbol
Parameter
29
tWP
Write Pulse Width
4
5
5
5
6
7
ns
30
tWCR
Write Command Hold Time from
RAS
19
23
25
30
35
40
ns
31
tRWL
Write Command to RAS Lead
Time
7
9
10
10
13
14
ns
32
tDS
Data in Setup Time
0
0
0
0
0
0
ns
14
33
tDH
Data in Hold Time
4
5
5
5
6
7
ns
14
34
tWOH
Write to OE Hold Time
5
5
5
6
7
8
ns
14
35
tOED
OE to Data Delay Time
5
5
5
6
7
8
ns
14
36
tRWC
Read-Modify-Write Cycle Time
67
79
90
95
115
130
ns
37
tRRW
Read-Modify-Write Cycle RAS
Pulse Width
46
53
59
64
80
87
ns
38
tCWD
CAS to WE Delay
19
21
23
25
32
34
ns
12
39
tRWD
RAS to WE Delay in ReadModify-Write Cycle
36
41
46
51
62
68
ns
12
40
tCRW
CAS Pulse Width (RMW)
27
31
34
38
50
52
ns
41
tAWD
Col. Address to WE Delay
24
27
29
31
41
42
ns
42
tPC
EDO Fast Page Mode Read or
Write Cycle Time
10
12
14
15
17
19
ns
43
tCP
CAS Precharge Time
3
3
4
5
6
7
ns
44
tCAR
Column Address to RAS Setup
Time
13
16
18
20
22
24
ns
45
tCAP
Access Time from Column
Precharge
46
tDHR
Data in Hold Time Referenced
to RAS
19
23
25
30
35
40
ns
47
tCSR
CAS Setup Time CAS-beforeRAS Refresh
5
7
8
10
10
10
ns
48
tRPC
RAS to CAS Precharge Time
0
0
0
0
0
0
ns
49
tCHR
CAS Hold Time CAS-beforeRAS Refresh
6
7
8
8
10
10
ns
50
tPCM
EDO Page Mode
Read-Modify-Write Cycle Time
35
40
43
47
65
70
ns
51
tCOH
Output Hold After CAS Low
4
5
5
5
5
5
ns
52
tOES
OE Low to CAS High Setup
Time
3
3
3
3
5
5
ns
53
tOEH
OE Hold Time from WE during
Read-Modify Write Cycle
5
5
5
5
10
10
ns
V53C16258H Rev. 3.8 November 1999
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
15
18
6
20
22
25
27
ns
12
7
V53C16258H
MOSEL VITELIC
AC Characteristics (Cont’d)
25
(100 MHz)
#
Symbol
Parameter
54
tOEP
OE High Pulse Width
55
tT
Transition Time (Rise and Fall)
56
tREF
Refresh Interval (512 Cycles)
30
35
40
45
50
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
4
1.5
5
50
8
1.5
8
50
1.5
8
10
50
1.5
8
10
50
1.5
10
50
8
1.5
8
ns
50
ns
15
8
ms
17
Optional Self Refresh
57
tRASS
RAS Pulse Width During Self
Refresh
100
100
100
100
100
100
µs
18
58
tRPS
RAS Precharge Time During
Self Refresh
100
100
100
100
100
100
ns
18
59
tCHS
CAS Hold Time Width During
Self Refresh
100
100
100
100
100
100
ns
18
60
tCHD
CAS Low Time During Self
Refresh
100
100
100
100
100
100
µs
18
Notes:
1. ICC is dependent on output loading when the device output is selected. Specified ICC (max.) is measured with the
output open.
2. ICC is dependent upon the number of address transitions. Specified ICC (max.) is measured with a maximum of two
transitions per address cycle in EDO Page Mode.
3. Specified VIL (min.) is steady state operating. During transitions, VIL (min.) may undershoot to –1.0 V for a period
not to exceed 20 ns. All AC parameters are measured with VIL (min.) ≥ VSS and VIH (max.) ≤ VCC.
4. tRCD (max.) is specified for reference only. Operation within tRCD (max.) limits insures that tRAC (max.) and tCAA
(max.) can be met. If tRCD is greater than the specified tRCD (max.), the access time is controlled by tCAA and tCAC.
5. Either tRRH or tRCH must be satisified for a Read Cycle to occur.
6. Measured with a load equivalent to one TTL input and 50 pF.
7. Access time is determined by the longest of tCAA, tCAC and tCAP.
8. Assumes that tRAD ≤ tRAD (max.). If tRAD is greater than tRAD (max.), tRAC will increase by the amount that tRAD
exceeds tRAD (max.).
9. Assumes that tRCD ≤ tRCD (max.). If tRCD is greater than tRCD (max.), tRAC will increase by the amount that tRCD
exceeds tRCD (max.).
10. Assumes that tRAD ≥ tRAD (max.).
11. Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference
point only. If tRAD is greater than the specified tRAD (max.) limit, the access time is controlled by tCAA and tCAC.
12. tWCS, tRWD, tAWD and tCWD are not restrictive operating parameters.
13. tWCS (min.) must be satisfied in an Early Write Cycle.
14. tDS and tDH are referenced to the latter occurrence of CAS or WE.
15. tT is measured between VIH (min.) and VIL (max.). AC-measurements assume tT = 3 ns.
16. Assumes a three-state test load (5 pF and a 500 Ohm Thevenin equivalent).
17. An initial 200 µs pause and 8 RAS-containing cycles are required when exiting an extended period of bias without
clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval.
18. One CBR refresh or complete set of row refreah cycles must be completed upon exiting Self Refreah Mode.
V53C16258H Rev. 3.8 November 1999
7
V53C16258H
MOSEL VITELIC
Truth Table
RAS
LCAS
UCAS
WE
OE
ADDRESS
Standby
H
H
H
X
X
X
Read: Word
L
L
L
H
L
ROW/COL
Data Out
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, Data-Out
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-Out
Write: Word (Early-Write)
L
L
L
L
X
ROW/COL
Data-In
Write: Lower Byte (Early)
L
L
H
L
X
ROW/COL
Lower Byte, Data-In
Upper Byte, High-Z
Read: Upper Byte (Early)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, Data-In
Read-Write
L
L
L
H→L
L→H
ROW/COL
Data-Out, Data-In
EDO Page-Mode Read
L
H→L
H→L
H
L
COL
Data-Out
2
EDO Page-Mode Write
L
H→L
H→L
L
X
COL
Data-In
2
EDO Page-Mode Read-Write
L
H→L
H→L
H→L
L→H
COL
Data-Out, Data-In
L→H→L
L
L
H
L
ROW/COL
L
H
H
X
X
ROW
High-Z
CBR Refresh
H→L
L
L
X
X
X
High-Z
Self Refresh
H→L
L
H
X
X
X
High-Z
Function
Hidden Refresh Read
RAS-Only Refresh
Notes:
1. Byte Write cycles LCAS or UCAS active.
2. Byte Read cycles LCAS or UCAS active.
3. Only one of the two CAS must be active (LCAS or UCAS).
V53C16258H Rev. 3.8 November 1999
8
I/O
Notes
High-Z
Data-Out
1, 2
1, 2
2
3
V53C16258H
MOSEL VITELIC
Waveforms of Read Cycle
t RAS (1)
RAS
t RC (2)
t RP (3)
t AR (23)
VIH
VIL
t CRP (13)
UCAS, LCAS
t RSH (R)(12)
t CAS (5)
VIH
VIL
t RAH (9)
VIH
ROW ADDRESS
VIL
t CAH (11)
t ASC (10)
COLUMN ADDRESS
t RCH (14)
t CAR (44)
t RCS (7)
WE
t CRP (13)
t RAD (24)
t ASR (8)
ADDRESS
t CSH (4)
t RCD (6)
t RRH (15)
VIH
VIL
t ROH (16)
t CAA (20)
OE
t OAC (17)
VIH
VIL
t OES (52)
I/O
t CAC (18)
t RAC (19)
VOH
t HZ (22)
t HZ (22)
VALID DATA-OUT
VOL
t LZ (21)
16258H-05
Waveforms of Early Write Cycle
t RC (2)
RAS
t RAS (1)
tAR (23)
VIH
t RP (3)
V IL
t CSH (4)
tCRP (13)
t RCD (6)
t RSH (W)(25)
t CAS (5)
VIH
UCAS, LCAS
V IL
t CAR (44)
t CAH (11)
t RAH (9)
tASR (8)
ADDRESS
t CRP (13)
VIH
V IL
tASC (10)
ROW ADDRESS
COLUMN ADDRESS
t WCH (28)
t RAD (24)
t CWL (26)
WE
t WP(29)
tWCS (27)
VIH
V IL
t WCR (30)
t RWL (31)
OE
VIH
V IL
t DHR (46)
tDS (32)
I/O
VIH
V IL
tDH (33)
VALID DATA-IN
HIGH-Z
16258H-06
Don’t Care
V53C16258H Rev. 3.8 November 1999
9
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of OE-Controlled Write Cycle
RAS
t AR (23)
V IH
t CSH (4)
t RCD (6)
t RSH (W)(12)
t CAS (5)
V IH
t CRP (13)
V IL
t RAD (24)
t RAH (9)
t ASR (8)
ADDRESS
t RP (3)
V IL
t CRP (13)
UCAS, LCAS
t RC (2)
t RAS (1)
V IH
ROW ADDRESS
V IL
t CAR (44)
t CAH (11)
t ASC (10)
COLUMN ADDRESS
t CWL (26)
t RWL (31)
t WP (29)
WE
V IH
V IL
t WOH (34)
OE
V IH
V IL
t OED (35)
I/O
t DH (33)
t DS (32)
V IH
VALID DATA-IN
V IL
16258H-07
Waveforms of Read-Modify-Write Cycle
t RWC (36)
tRRW (37)
RAS
t RP (3)
t AR (23)
VIH
VIL
t CSH (4)
t CRP (13)
UCAS, LCAS
t RCD (6)
t RSH (W)(25)
t CRW (40)
VIH
VIL
t
t RAH (9)
VIH
ROW
ADDRESS
VIL
COLUMN
ADDRESS
t RAD (24)
t ACS
WE
OE
CAH (11)
t ASC (10)
t ASR (8)
ADDRESS
t CRP (13)
t RWD (39)
t AWD (41)
t CWD (38)
t RWL (31)
t WP (29)
VIH
VIL
t CAA (20)
t OAC (17)
VIH
t OEH (53)
VIL
t OED (35)
t CAC (18)
t RAC (19)
I/O
t CWL (26)
VIH
VOH
VIL
VOL
t DH (33)
t HZ (22)
t DS (32)
VALID
DATA-OUT
VALID
DATA-IN
t LZ (21)
16258H-08
Don’t Care
V53C16258H Rev. 3.8 November 1999
10
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of EDO Page Mode Read Cycle
RAS
V IL
t PC (42)
t CP (43)
V IH
t CSH (4)
t RAH (9)
ROW
ADDRESS
t CAH (11)
COLUMN
ADDRESS
COLUMN
ADDRESS
t RCH (14)
t CAH (11)
COLUMN
ADDRESS
t RCS (7)
t RCS (7)
t RCH (14)
V IH
V IL
t CAA (20)
t CAA (20)
t CAP (45)
t OAC (17)
t RRH (15)
t OAC (17)
t OES (52)
V IH
V IL
t RAC (19)
t CAC (18)
t LZ (21)
I/O
t CAR (44)
t ASC (10)
t CAH (11)
t ASC (10)
t RCS (7)
OE
t CRP (13)
t CAS (5)
t CAS (5)
V IL
V IL
WE
t RSH (R)(12)
t CAS (5)
V IH
t ASR (8)
ADDRESS
RP (3)
t RCD (6)
t CRP (13)
UCAS, LCAS
t
t RAS (1)
t AR (23)
V IH
t OEP (54)
t CAC (18)
t CAC (18)
t COH (5)
V OH
t HZ (22)
VALID
DATA OUT
V OL
t HZ (22)
t HZ (22)
t HZ (22)
VALID
DATA OUT
VALID
DATA OUT
t LZ
16258H-09
Waveforms of EDO Page Mode Write Cycle
t RP (3)
t AR (23)
RAS
t RAS (1)
V IH
V IL
t CRP (13)
t RCD (6)
UCAS, LCAS
t PC (42)
t CP (43)
t CAS (5)
V IH
t CSH (4)
t ASC (10)
t ASR (8)
V IH
t CRP (13)
ROW
ADD
V IL
t CAH (11)
COLUMN
ADDRESS
COLUMN
ADDRESS
t CWL (26)
t WCS (27)
t CAR (44)
t ASC (10)
t CAH (11)
t RAD (24)
t WCH (28)
t CAH (11)
COLUMN
ADDRESS
t CWL (26)
t WCS (27)
t WCS (27)
t CWL (26)
t WCH (28)
t RWL (31)
t WCH (28)
t WP (29)
t WP (29)
t WP (29)
WE
t CAS (5)
t CAS (5)
V IL
t RAH (9)
ADDRESS
t RSH (W)(25)
V IH
V IL
OE
VIH
V IL
t DH (33)
t DS (32)
I/O
V IH
V IL
VALID
DATA IN
t DS (32)
t DH (33)
VALID
DATA IN
OPEN
t DS (32)
t DH (33)
VALID
DATA IN
OPEN
16258H-10
Don’t Care
V53C16258H Rev. 3.8 November 1999
11
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of EDO Page Mode Read-Write Cycle
t RAS (1)
VIH
RAS
V
IL
t CSH (4)
t RCD (6)
t PCM (50)
IH
V
t RSH (W)(25)
t CRP (13)
t CAS (5)
t CP (43)
t CAS (5)
V
UCAS, LCAS
t RP (3)
t CAS (5)
t RAD (24)
IL
t RAH (9)
t ASC (10)
t ASR (8)
V
ADDRESS
IH
IL
t CAH (11)
COLUMN
ADDRESS
COLUMN
ADDRESS
t RWD (39)
t CWL (26)
t CWD (38)
t CAR (44)
t ASC (10)
t CAH (11)
ROW
ADD
V
t ASC (10)
t CAH (11)
COLUMN
ADDRESS
t CWD (38)
t CWD (38)
t RWL (31)
t CWL (26)
t CWL (26)
V
IH
WE
V
IL
t CAA (20)
t OAC (17)
t AWD (41)
t AWD (41)
t AWD (41)
t WP (29)
t WP (29)
t WP (29)
t OAC (17)
t OAC (17)
V
OE
IH
V
t OEH (53)
IL
t CAA (20)
t OED (35)
t CAC (18)
t RAC (19)
t CAP (43)
t CAP (43)
t CAA (20)
t OED (35)
t CAC (18)
t HZ (22)
t HZ (22)
t DH (33)
t DH (33)
t DS (32)
t DS (32)
I/O
V I/OH
OUT
V I/OL
OUT
IN
t LZ (21)
t LZ
t OED (35)
t CAC (18)
t HZ (22)
t DH (33)
t DS (32)
OUT
IN
IN
16258H-11
t LZ
Waveforms of RAS-Only Refresh Cycle
t RC (2)
RAS
t RAS (1)
V IH
t RP (3)
V IL
t CRP (13)
UCAS, LCAS
V IH
V IL
t ASR (8)
ADDRESS
V IH
t RAH (9)
ROW ADD
V IL
16258H-12
NOTE:
WE, OE = Don’t care
Don’t Care
V53C16258H Rev. 3.8 November 1999
12
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of CAS-before-RAS Refresh Counter Test Cycle
t RAS (1)
RAS
t RP (3)
V IH
V IL
t CSR (47)
UCAS, LCAS
t CHR (49)
t RSH (W)(25)
t CAS (5)
t CP (43)
V IH
V IL
ADDRESS
V IH
V IL
READ CYCLE
WE
t RRH (15)
t RCH (14)
t RCS (7)
V IH
V IL
t HZ (22)
t LZ (21)
I/O
V IH
D OUT
V IL
t RWL (31)
t CWL (26)
WRITE CYCLE
WE
t WCH (28)
t WCS (27)
V IH
V IL
OE
V IH
V IL
t
I/O
t DH (33)
DS (32)
V IH
D IN
V IL
16258H-13
Waveforms of CAS-before-RAS Refresh Cycle
t RC (2)
t RP (3)
RAS
V IL
t CP (43)
UCAS, LCAS
t RAS (1)
t RP (3)
V IH
t RPC (48)
t CHR (49)
t CSR (47)
V IH
V IL
t HZ (22)
I/O
V OH
V OL
16258H-14
NOTE: WE, OE, A0–A8 = Don’t care
Don’t Care
V53C16258H Rev. 3.8 November 1999
13
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of Hidden Refresh Cycle (Read)
tRC (2)
RAS
VIH
tRSH (R)(12)
tCRP (13)
V IL
VIH
tRAD (24)
tASC (10)
t CAH (11)
COLUMN
ADDRESS
ROW
ADD
V IL
tRCS (7)
WE
t CHR (49)
VIH
tASR (8)
t RAH (9)
ADDRESS
t RP (3)
t RAS (1)
V IL
tRCD (6)
t CRP (13)
UCAS, LCAS
tRC (2)
t RP (3)
t RAS (1)
tAR (23)
t RRH (15)
VIH
V IL
t CAA (20)
t OAC (17)
OE
VIH
V IL
t CAC (18)
t LZ (21)
t RAC (19)
I/O
t HZ (22)
t HZ (22)
VOH
VALID DATA
VOL
16258H-15
Waveforms of Hidden Refresh Cycle (Write)
t RC (2)
RAS
VIH
t RSH (12)
VIH
t CAH (11)
ROW
ADD
COLUMN
ADDRESS
t WCH (28)
VIH
V IL
VIH
V IL
t DS (32)
VIH
I/O
t CRP (13)
tRAD (24)
tASC (10)
t WCS (27)
OE
t CHR (49)
V IL
V IL
WE
tRP (3)
VIH
tASR (8)
t RAH (9)
ADDRESS
t RAS (1)
V IL
t RCD (6)
t CRP (13)
UCAS, LCAS
t RC (2)
tRP (3)
t RAS (1)
tAR (23)
V IL
tDH (33)
VALID DATA-IN
t DHR (46)
16258H-16
Don’t Care
V53C16258H Rev. 3.8 November 1999
14
Undefined
V53C16258H
MOSEL VITELIC
Waveforms of EDO-Page-Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write)
tRAS
RAS
tRP
V IH
V IL
tCSH
tPC
tCRP
UCAS, LCAS
tRCD
tCAS
tPC
tCP
tCAS
tRSH
tCP
tCAS
tCP
V IH
V IL
tAR
tCAR
tRAD
tASR
ADDRESS
V IH
V IL
tRAH
tASC
ROW
ADDRESS
tCAH
tASC
COLUMN
ADDRESS
tCAH
COLUMN
ADDRESS
V IH
V IL
tCAH
COLUMN
ADDRESS
tRCH
tRCS
WE
tASC
tWCS
tWCH
tCAA
tCAA
tCAP
tRAC
tCAC
tCAC
tDS
tDH
tOE
V IH
OE
V IL
tCOH
I/O
VOH
VOL
VALID
DATA OUT
VALID
DATA OUT
VALID
DATA IN
16258H-17
Waveforms of Self Refresh Cycle
t RP (3)
RAS
VIH
V IL
t RASS (57)
tRPC (48)
tCP (43)
tCSR (47)
tCHS (59)
tCHD (60)
UCAS, LCAS
ADDRESS
t RPS (58)
tRPC (48)
VIH
V IL
VIH
V IL
I/O
VOH
OPEN
VOL
WE
OE
VIH
V IL
VIH
V IL
16258L 05
Don’t Care
V53C16258H Rev. 3.8 November 1999
15
Undefined
V53C16258H
MOSEL VITELIC
Functional Description
Extended Data Output Page Mode
The V53C16258H is a CMOS dynamic RAM
optimized for high data bandwidth, low power
applications. It is functionally similar to a traditional
dynamic RAM. The V53C16258H reads and writes
data by multiplexing an 18-bit address into a 9-bit
row and a 9-bit column address. The row address is
latched by the Row Address Strobe (RAS). The
column address “flows through” an internal address
buffer and is latched by the Column Address Strobe
(CAS). Because access time is primarily dependent
on a valid column address rather than the precise
time that the CAS edge occurs, the delay time from
RAS to CAS has little effect on the access time.
EDO Page operation permits all 512 columns
within a selected row of the device to be randomly
accessed at a high data rate. Maintaining RAS low
while performing successive CAS cycles retains the
row address internally and eliminates the need to
reapply it for each cycle. The column address buffer
acts as a transparent or flow-through latch while
CAS is high. Thus, access begins from the
occurrence of a valid column address rather than
from the falling edge of CAS, eliminating tASC and tT
from the critical timing path. CAS latches the
address into the column address buffer. During
EDO operation, Read, Write, Read-Modify-Write or
Read-Write-Read cycles are possible at random
addresses within a row. Following the initial entry
cycle into Hyper Page Mode, access is tCAA or tCAP
controlled. If the column address is valid prior to the
rising edge of CAS, the access time is referenced to
the CAS rising edge and is specified by tCAP. If the
column address is valid after the rising CAS edge,
access is timed from the occurrence of a valid
address and is specified by tCAA. In both cases, the
falling edge of CAS latches the address and
enables the output.
EDO provides a sustained data rate of 83 MHz for
applications that require high bandwidth such as bitmapped graphics or high-speed signal processing.
The following equation can be used to calculate the
maximum data rate:
Memory Cycle
A memory cycle is initiated by bringing RAS low.
Any memory cycle, once initiated, must not be
ended or aborted before the minimum tRAS time has
expired. This ensures proper device operation and
data integrity. A new cycle must not be initiated until
the minimum precharge time tRP/tCP has elapsed.
Read Cycle
A Read cycle is performed by holding the Write
Enable (WE) signal High during a RAS/CAS
operation. The column address must be held for a
minimum specified by tAR. Data Out becomes valid
only when tOAC, tRAC, tCAA and tCAC are all
satisifed. As a result, the access time is dependent
on the timing relationships between these
parameters. For example, the access time is limited
by tCAA when tRAC, tCAC and tOAC are all satisfied.
512
Data Rate = ---------------------------------------t RC + 511 × t PC
Write Cycle
A Write Cycle is performed by taking WE and
CAS low during a RAS operation. The column
address is latched by CAS. The Write Cycle can be
WE controlled or CAS controlled depending on
whether WE or CAS falls later. Consequently, the
input data must be valid at or before the falling edge
of WE or CAS, whichever occurs last. In the CAScontrolled Write Cycle, when the leading edge of
WE occurs prior to the CAS low transition, the I/O
data pins will be in the High-Z state at the beginning
of the Write function. Ending the Write with RAS or
CAS will maintain the output in the High-Z state.
In the WE controlled Write Cycle, OE must be in
the high state and tOED must be satisfied.
V53C16258H Rev. 3.8 November 1999
Self Refresh
Self Refresh mode provides internal refresh control signals to the DRAM during extended periods of
inactivity. Device operation in this mode provides
additional power savings and design ease by elimination of external refresh control signals. Self Refresh mode is initiated with a CAS before RAS
(CBR) Refresh cycle, holding both RAS low (tRASS)
and CAS low (tCHD) for a specified period. Both of
these parameters are specified with minimum values to guarantee entry into Self Refresh operation.
Once the device has been placed in to Self Refresh
mode the CAS clock is no longer required to maintain Self Refresh operation.
16
V53C16258H
MOSEL VITELIC
Power-On
The Self Refresh mode is terminated by returning
the RAS clock to a high level for a specified (tRPS)
minimum time. After termination of the Self Refresh
cycle normal accesses to the device may be initiated immediately, providing that subsequent refresh
cycles utilize the CAS before RAS (CBR) mode of
operation.
After application of the VCC supply, an initial
pause of 200 µs is required followed by a minimum
of 8 initialization cycles (any combination of cycles
containing a RAS clock). Eight initialization cycles
are required after extended periods of bias without
clocks (greater than the Refresh Interval).
During Power-On, the VCC current requirement of
the V53C16258H is dependent on the input levels of
RAS and CAS. If RAS is low during Power-On, the
device will go into an active cycle and ICC will exhibit
current transients. It is recommended that RAS and
CAS track with VCC or be held at a valid VIH during
Power-On to avoid current surges.
Data Output Operation
The V53C16258H Input/Output is controlled by
OE, CAS, WE and RAS. A RAS low transition
enables the transfer of data to and from the selected
row address in the Memory Array. A RAS high
transition disables data transfer and latches the
output data if the output is enabled. After a memory
cycle is initiated with a RAS low transition, a CAS
low transition or CAS low level enables the internal
I/O path. A CAS high transition or a CAS high level
disables the I/O path and the output driver if it is
enabled. A CAS low transition while RAS is high has
no effect on the I/O data path or on the output
drivers. The output drivers, when otherwise
enabled, can be disabled by holding OE high. The
OE signal has no effect on any data stored in the
output latches. A WE low level can also disable the
output drivers when CAS is low. During a Write
cycle, if WE goes low at a time in relationship to
CAS that would normally cause the outputs to be
active, it is necessary to use OE to disable the
output drivers prior to the WE low transition to allow
Data In Setup Time (tDS) to be satisfied.
V53C16258H Rev. 3.8 November 1999
Table 1. V53C16258H Data Output
Operation for Various Cycle Types
17
Cycle Type
I/O State
Read Cycles
Data from Addressed
Memory Cell
CAS-Controlled Write
Cycle (Early Write)
High-Z
WE-Controlled Write
Cycle (Late Write)
OE Controlled. High
OE = High-Z I/Os
Read-Modify-Write
Cycles
Data from Addressed
Memory Cell
EDO Read Cycle
Data from Addressed
Memory Cell
EDO Write Cycle
(Early Write)
High-Z
EDO Read-ModifyWrite Cycle
Data from Addressed
Memory Cell
RAS-only Refresh
High-Z
CAS-before-RAS
Refresh Cycle
Data remains as in
previous cycle
CAS-only Cycles
High-Z
V53C16258H
MOSEL VITELIC
Package Outlines
40-Pin Plastic SOJ
Unit in inches [mm]
20
0.026 MIN
[0.660 MIN]
+0.004
0.025 –0.002
+0.102
0.635 –0.051
0.368 ± 0.010
[9.35 ± 0.254]
1
0.010
0.144 MAX
[3.66 MAX]
21
0.400 ±0.005
[10.16 ± 0.127]
40
0.440 ±0.005
[11.18 ± 0.127]
1.025 TYP. (1.035 MAX.)
[26.04 TYP. (26.29 MAX.)]
+ 0.004
– 0.002
+0.102
0.254 –0.051
0.04 [0.1]
0.050 ± 0.006
[1.27 ± 0.152]
0.018
+0.004
–0.002
+0.102
0.457 –0.051
40/44L-Pin TSOP-II
40
21
1
20
0°–5°
0.0315 BSC
[.8001 BSC]
0.012 – 0.016
[0.305 – 0.406]
0.039 – 0.047
[0.991 – 1.193]
0.002 – 0.008
[0.051 – 0.203]
BASE PLANE
SEATING PLANE
0.721 – 0.729
[18.31 – 18.52]
V53C16258H Rev. 3.8 November 1999
18
Unit in inches [mm]
0.017 – 0.023
[0.432 – 0.584]
0.396 – 0.404
[10.06 – 10.26]
0.462 – 0.470
[11.73 – 11.94]
0.0047 – 0.0083
[0.119 – .211]
V53C16258H
MOSEL VITELIC
Notes
V53C16258H Rev. 3.8 November 1999
19
MOSEL VITELIC
WORLDWIDE OFFICES
V53C16258H
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© Copyright 1999, MOSEL VITELIC Inc.
The information in this document is subject to change without
notice.
MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this
document may be copied or reproduced in any form or by any
means without the prior written consent of MOSEL-VITELIC.
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Printed in U.S.A.
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