MOSEL VITELIC PRELIMINARY INFORMATION V61C31161024 64K x 16 HIGH SPEED STATIC RAM Features Description ■ ■ ■ ■ ■ The V61C31161024 is a 1,048,576-bit static random-access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. High-speed: 10, 12, 15 ns All inputs and outputs directly TTL compatible Three state outputs Single 3.3V ± 10% Power Supply Packages – 44-pin TSOP (Standard) – 44-pin 400 mil SOJ ■ Low Power Consumption – Active: 140mA – Standby: 2mA (CMOS) Functional Block Diagram A1 VCC Row Decoder A7 GND Memory Array A8 A9 I/O0 Column I/O Input Data Circuit Column Decoder I/O15 A0 UBE LBE OE WE CE A10 A15 Control Circuit 6131161024-01 Device Usage Chart Operating Temperature Range T K 10 12 15 Temperature Mark 0°C to 70 °C • • • • • Blank V61C31161024 Rev. 0.5 August 1999 Package Outline Access Time (ns) 1 V61C31161024 MOSEL VITELIC Pin Descriptions UBE, LEB Byte Enable Active low inputs. These inputs are used to enable the upper or lower data byte. A0–A15 Address Inputs These 16 address inputs select one of the 64K x 16 bit segments in the RAM. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip enabled, when WE is HIGH and OE is LOW, output data will be present at the I/O pins; when WE is LOW and OE is HIGH, the data present on the I/O pins will be written into the selected memory locations. CE Chip Enable Input CE is active LOW. It must be active to read from or write to the device. If chip enable is not active, the device is deselected and is in a standby power mode. The I/O pins will be in the high-impedance state when deselected. I/O0–I/O15 Data Input and Data Output Ports These 16 bidirectional ports are used to read data from and write data into the RAM. OE Output Enable Input The output enable input is active LOW. When OE is Low with CE Low and WE High, data will be presented on the I/O pins. The I/O pins will be in the high impedance state when OE is High. VCC Power Supply GND Ground Pin Configurations (Top View) 44-Pin SOJ 44-Pin TSOP-II (Standard) A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 40 UBE CE 6 39 LBE I/O0 7 38 I/O15 I/O1 8 37 I/O14 I/O2 9 36 I/O13 I/O3 10 35 I/O12 VCC 11 34 GND GND 12 33 VCC I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O7 16 29 I/O8 WE 17 28 NC A15 18 27 A8 A14 19 26 A9 A13 20 25 A10 A12 21 24 A11 NC 22 23 NC A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 6131161024-03 6131161024-02 V61C31161024 Rev. 0.5 August 1999 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 2 A5 A6 A7 OE UBE LBE I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC V61C31161024 MOSEL VITELIC Part Number Information V 61 C 31 16 1024 – MOSEL-VITELIC TEMP. SRAM FAMILY OPERATING VOLTAGE DENSITY SPEED PKG BLANK = 0°C to 70°C 1024K 61 = HIGH SPEED C = CMOS PROCESS PWR. T = TSOP STANDARD K = 400 mil SOJ 31 = 3.3V ORGANIZATION 16 = 16-bit 10 ns 12 ns 15 ns BLANK = STANDARD POWER 6131161024-04 Absolute Maximum Ratings (1) Symbol Parameter VIN Input Voltage Commercial Units -0.5 to VCC+0.5 V PT Power Dissipation 1.0 W TBIAS Temperature Under Bias -10 to +85 °C TSTG Storage Temperature -65 to +150 °C NOTE: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Capacitance* TA = 25°C, f = 1.0MHz Symbol Parameter Conditions CIN Input Capacitance COUT Output Capacitance Max. Unit VIN = 0V 6 pF VI/O = 0V 8 pF NOTE: 1. This parameter is guaranteed and not tested. Truth Table LBE I/O8-15 Operation I/O0-7 Operation X X High Z High Z H H High Z High Z X X High Z High Z L L DOUT DOUT H L H DOUT High Z H H L High Z DOUT X L L L DIN DIN X L L H DIN High Z X L H L High Z DIN Mode CE OE WE Standby H X X Output Disable L X X Output Disable L H H Read L L H Read L L Read L L Write L Write L Write L UBE NOTE: X = Don’t Care, L = LOW, H = HIGH V61C31161024 Rev. 0.5 August 1999 3 V61C31161024 MOSEL VITELIC DC Electrical Characteristics (over all temperature ranges, VCC = 3.3V ± 10%) -10 Symbol Parameter Test Conditions IIL Input Leakage Current IOL -12 -15 Min. Max. Min. Max. Min. Max. Units VCC = MAX, VIN = GND to VCC — 5 — 5 — 5 µA Output Leakage Current CE = VIH, VCC = Max, VOUT = GND to VCC — 5 — 5 — 5 µA ICC Operating Power Supply Current CE = VIL, IOUT = 0, f = fmax — 140 — 130 — 120 mA ISB Standby Power Supply Current (TTL Level) CE = VIH, f = fmax — 25 — 20 — 20 mA ISB1 Standby Power Supply Current (CMOS Level) CE ≥ VCC – 0.2V, f = 0, VIN ≤ 0.2V or VIN > VCC – 0.2V — 2 — 2 — 2 mA VIL Input Low Voltage(1,2) -0.3 0.8 -0.3 0.8 -0.3 0.8 V VIH Input High Voltage(1) 2.2 VCC + 0.3 2.2 VCC + 0.3 VOL Output Low Voltage IOL = 4mA — 0.4 — VOH Output High Voltage IOH = -2mA 2.4 — 2.4 2.2 VCC + 0.3 V 0.4 — 0.4 V — 2.4 — V NOTES: 1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included. 2. VIL (Min.) = -3.0V for pulse width < 20ns. 3. fMAX = 1/tRC. 4. Maximum values. AC Test Conditions AC Test Loads and Waveforms Input Pulse Levels 0 to 3V Input Rise and Fall Times 3 ns Timing Reference Levels 1.5V +3.3V 480 Ω I/O Pins Output Load see below 255 Ω CL = 30 pF* Key to Switching Waveforms WAVEFORM INPUTS OUTPUTS MUST BE STEADY WILL BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGING FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGING FROM L TO H DON'T CARE: ANY CHANGE PERMITTED CHANGING: STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE “OFF” STATE V61C31161024 Rev. 0.5 August 1999 +3.3V 480 Ω I/O Pins 255 Ω CL = 5pF* for tCLZ, tCHZ, tOLZ, tWHZ, tOW, and tOHZ * Includes scope and jig capacitance 6131161024-05 4 V61C31161024 MOSEL VITELIC AC Electrical Characteristics (over all temperature ranges) Read Cycle -10 Parameter Name Parameter -12 -15 Min. Max. Min. Max. Min. Max. Unit tRC Read Cycle Time 10 — 12 — 15 — ns tAA Address Access Time — 10 — 12 — 15 ns tACS Chip Enable Access Time — 10 — 12 — 15 ns tBA UBE, LBE Access Time — 5 — 6 — 7 ns tOE Output Enable to Output Valid — 5 — 6 — 7 ns tCLZ Chip Enable to Output in Low Z 2 — 3 — 3 — ns tBLZ UBE, LBE to Output in Low Z 0 — 0 — 0 — ns tOLZ Output Enable to Output in Low Z 0 — 0 — 0 — ns tCHZ Chip Disable to Output in High Z 0 5 0 6 0 7 ns tOHZ Output Disable to Output in High Z 0 5 0 6 0 7 ns tBHZ UBE, LBE to Output in High Z 0 5 0 6 0 7 ns tOH Output Hold from Address Change 2 — 3 — 3 — ns Write Cycle -10 Parameter Name Parameter -12 -15 Min. Max. Min. Max. Min. Max. Unit tWC Write Cycle Time 10 — 12 — 15 — ns tCW Chip Enable to End of Write 7 — 8 — 10 — ns tAS Address Setup Time 0 — 0 — 0 — ns tAW Address Valid to End of Write 7 — 8 — 10 — ns tWP Write Pulse Width 7 — 8 — 10 — ns tAH Address Hold from End of Write 0 — 0 — 0 — ns tWHZ Write to Output High-Z 0 5 0 6 0 7 ns tWLZ Write to Output Low Z 3 — 3 — 5 — ns tDW Data Setup to End of Write 5 — 6 — 7 — ns tDH Data Hold from End of Write 0 — 0 — 0 — ns tBW UBE, LBE to End of Write 7 — 8 — 10 — ns V61C31161024 Rev. 0.5 August 1999 5 V61C31161024 MOSEL VITELIC Switching Waveforms (Read Cycle) Read Cycle 1(1, 2) tRC ADDRESS tAA OE tOE tOLZ tOHZ(5) tBHZ tBLZ UBE, LBE tBA I/O 6131161024-06 Read Cycle 2(1, 2, 4) tRC ADDRESS tOH tAA tOH I/O 6131161024-07 Read Cycle 3(1, 3, 4) ADDRESS tACS CE tCLZ(5) tCHZ(5) I/O 6131161024-08 NOTES: 1. WE = VIH. 2. CE1 = VIL. 3. Address valid prior to or coincident with CE transition LOW. 4. OE = VIL. 5. Transition is measured ±500mV from steady state with CL = 5pF. This parameter is guaranteed and not 100% tested. 6. UBE = VIL, LBE = VIL. V61C31161024 Rev. 0.5 August 1999 6 V61C31161024 MOSEL VITELIC Switching Waveforms (Write Cycle) Write Cycle 1 (WE Controlled)(4) tWC ADDRESS tAH (2) tCW(6) CE tAW tAS WE tBW UBE, LBE tWP(1) OUTPUT tWHZ(3) tDW tDH INPUT 6131161024-09 Write Cycle 2 (CE Controlled)(4) tWC ADDRESS tAS tAH (2) tCW(6) CE tAW WE tBW UBE, LBE OUTPUT Hi-Z tDW tDH (5) INPUT 6131161024-10 NOTES: 1. The internal write time of the memory is defined by the overlap of CE active and WE low. All signals must be active to initiate and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 2. tAH is measured from the earlier of CE or WE going high. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 4. OE = VIL or VIH. However it is recommended to keep OE at VIH during write cycle to avoid bus contention. 5. If CE is LOW during this period, I/O pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 6. tCW is measured from CE going low to the end of write. V61C31161024 Rev. 0.5 August 1999 7 V61C31161024 MOSEL VITELIC Package Diagrams 44-pin 400 mil TSOP-II +0.004 0.006 -0.002 +0.01 0.15 -0.05 23 1 22 0.020 ± 0.006 [0.50 ± .019] 0.400 [10.16] 0.463 ± 0.008 [11.76 ± 0.20] 44 0°–5° 0.741[18.81] MAX 0.725 ± 0.004 [18.41 ± 0.10] 0.047 [1.20] MAX 0.004 MAX Unit in inches [mm] 0.032 [0.80] 0.031 [0.80] V61C31161024 Rev. 0.5 August 1999 0.014 ± 0.004 [0.35 ± 0.10] 0.000 [0.0] MIN 8 V61C31161024 MOSEL VITELIC Package Diagrams 44-pin 400 mil SOJ (450 mil pin-to-pin) 1.131+0.008 28.73 +0.2 -0.014 -0.36 22 0.31 [0.8] MIN +.008 –.007 [2.3±0.2] 0.091 0.102 [2.6] +.006 –.007 [1.03 ± 0.15] 0.041 0.029 [0.74] 0.138 ± 0.008 [3.5 ± 0.2] 1 0.400 [10.16] 23 0.440 ± 0.008 [11.18 ± 0.20] Unit in inches [mm] 44 +0.004 -0.002 0.20 +0.10 -0.05 0.008 0.050 [1.27] 0.004 [0.10] V61C31161024 Rev. 0.5 August 1999 0.005 [0.12] M 0.016+0.004 –0.005 [0.40 ± 0.10] 9 0.370 ± 0.008 [9.4 ± 0.20] 0.033 [0.85] MOSEL VITELIC WORLDWIDE OFFICES V61C31161024 U.S.A. TAIWAN SINGAPORE IRELAND & UK 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 BLOCK A UNIT 2 BROOMFIELD BUSINESS PARK MALAHIDE CO. DUBLIN, IRELAND PHONE: +353 1 8038020 FAX: +353 1 8038049 NO 19 LI HSIN RD. SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. 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