MOSEL VITELIC PRELIMINARY V62C2184096 512K X 8, CMOS STATIC RAM Features Description ■ ■ ■ ■ ■ ■ ■ ■ The V62C2184096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW OE, and three static I/O’s. This device has an automatic power-down mode feature when deselected. High-speed: 70, 85 ns Ultra low standby current of 4µA (max.) Fully static operation All inputs and outputs directly compatible Three state outputs Ultra low data retention current (VCC = 1.2V) Operating voltage: 2.3V–3.0V Packages – 32-Pin TSOP (Standard) – 36-Ball CSP BGA (8mm x 10mm) Functional Block Diagram Input Buffer I/O8 Sense Amp Row Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 1024 x 4096 I/O1 Column Decoder OE WE CE1 CE2 Control Circuit A10 A11 A12 A13 A14 A15 A16 A17 A18 Device Usage Chart Operating Temperature Range Package Outline Access Time (ns) Power T B 70 85 L LL Temperature Mark 0°C to 70°C • • • • • • Blank –40°C to +85°C • • • • • I V62C2184096 Rev. 1.5 June 2000 1 V62C2184096 MOSEL VITELIC Pin Descriptions WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip enabled, when WE is HIGH and OE is LOW, output data will be present at the I/O pins; when WE is LOW and OE is HIGH, the data present on the I/O pins will be written into the selected memory locations. A0–A18 Address Inputs These 19 address inputs select one of the 512K x 8 bit segments in the RAM. CE1, CE2* Chip Enable Inputs CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The I/O pins will be in the high-impedance state when deselected. I/O1–I/O8 Data Input and Data Output Ports These 8 bidirectional ports are used to read data from and write data into the RAM. Output Enable Input OE The Output Enable input is active LOW. With chip enabled, when OE is LOW and WE HIGH, data of the selected memory location will be available on the I/O pins. When OE is HIGH, the I/O pins will be in the high impedance state. VCC Power Supply GND Ground *CE2 is available on BGA package only. Pin Configurations (Top View) 32-Pin TSOP (Standard) A11 A9 A8 A13 WE A18 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 A3 36 BGA 1 2 3 4 5 6 1 2 3 4 5 A A0 A1 CE2 A3 A6 A8 B I/O5 A2 WE A4 A7 I/O1 C I/O6 NB NC A5 NB I/O2 D VSS NB NB NB NB VCC E VCC NB NB NB NB VSS F I/O7 NB A18 A17 NB I/O3 F G I/O8 OE CE1 A16 A15 I/O4 G H A9 A10 A11 A12 A13 A14 A B C D E Note: NC means no connect. NB means no ball. H TOP VIEW TOP VIEW V62C2184096 Rev. 1.5 June 2000 2 6 V62C2184096 MOSEL VITELIC Part Number Information V MOSEL-VITELIC MANUFACTURED 62 C 21 8 4096 – TEMP. SRAM FAMILY OPERATING VOLTAGE PKG DENSITY PWR. 4096K 62 = STANDARD BLANK = 0°C to 70°C I = -40°C to +85°C SPEED 70 ns 85 ns C = CMOS PROCESS T = TSOP STANDARD B = BGA 21 = 2.3V–3.0V ORGANIZATION L = LOW POWER LL = LOW LOW POWER 8 = 8-bit Absolute Maximum Ratings (1) Symbol Parameter Commercial Industrial Units VCC Supply Voltage -0.5 to + VCC + 0.5 -0.5 to + VCC + 0.5 V VN Input Voltage -0.5 to + VCC + 0.5 -0.5 to + VCC + 0.5 V VDQ Input/Output Voltage Applied VCC + 0.3 VCC + 0.3 V TBIAS Temperature Under Bias -10 to +125 -65 to +135 °C TSTG Storage Temperature -55 to +125 -65 to +150 °C NOTE: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Capacitance* TA = 25°C, f = 1.0MHz Symbol Parameter CIN Input Capacitance COUT Output Capacitance Truth Table Conditions Max. Unit VIN = 0V 6 pF Mode CE1 CE2 OE WE I/O Operation VI/O = 0V 8 pF Standby H X X X High Z Standby X L X X High Z Output Disable L H H H High Z Read L H L H DOUT Write L H X L DIN NOTE: 1. This parameter is guaranteed and not tested. NOTE: X = Don’t Care, L = LOW, H = HIGH V62C2184096 Rev. 1.5 June 2000 3 V62C2184096 MOSEL VITELIC DC Electrical Characteristics (over all temperature ranges, VCC = 2.3V–3.0V) Symbol Min. Typ. Max. Units VIL Input LOW Voltage(1,2) -0.5 — 0.4 V VIH Input HIGH Voltage(1) 2.0 — VCC+0.3 V IIL Input Leakage Current VCC = Max, VIN = 0V to VCC — — 1 µA IOL Output Leakage Current VCC = Max, CE1 = VIH, VOUT = 0V to VCC — — 1 µA VOL Output LOW Voltage VCC = Min, IOL = 2mA — — 0.4 V VOH Output HIGH Voltage VCC = Min, IOH = -0.5mA VCC–0.4 — — V Comm.(3) Ind.(3) Units f = fmax 35 40 mA f = 1 MHz 4 5 L 0.5 1 LL 0.3 1 L 10 15 LL 5 7 Symbol ICC1 ISB ISB1 Parameter Test Conditions Parameter Average Operating Current, CE1 = VIL, CE2 = VCC – 0.2, Output Open, VCC = Max. TTL Standby Current CE1 ≥ VIH, CE2 ≤ VIL, VCC = Max., f = 0 CMOS Standby Current, CE1 ≥ VCC – 0.2V, CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, VCC = Max., f = 0 NOTES: 1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included. 2. VIL (Min.) = -3.0V for pulse width < tRC/2. 3. Maximum value. AC Test Conditions Input Pulse Levels AC Test Loads and Waveforms 0 to 2.0V Input Rise and Fall Times 5 ns Timing Reference Levels 1.1V Output Load CL* TTL see below CL = 30pF + 1TTL Load * Includes scope and jig capacitance V62C2184096 Rev. 1.5 June 2000 4 mA µA V62C2184096 MOSEL VITELIC Data Retention Characteristics Symbol Parameter VDR VCC for Data Retention CE1 ≥ VCC – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V ICCDR Data Retention Current CE1 ≥ VDR – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, VDR = 1.2V Com’l Ind. tCDR tR Min. Typ.(2) Max. Units 1.2 — 3.0 V L — 1 3 µA LL — 0.5 2 L — — 5 LL — — 4 0 — — ns — — ns Power Chip Deselect to Data Retention Time Operation Recovery Time (see Retention Waveform) tRC NOTES: 1. tRC = Read Cycle Time 2. TA = +25°C. Low VCC Data Retention Waveform (1) (CE1 Controlled) Data Retention Mode VCC VDR ≥ 1.2V 2.3V tCDR CE1 2.0V CE1 ≥ VCC – 0.2V 2.3V tR 2.0V Key to Switching Waveforms WAVEFORM V62C2184096 Rev. 1.5 June 2000 INPUTS OUTPUTS MUST BE STEADY WILL BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGING FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGING FROM L TO H DON'T CARE: ANY CHANGE PERMITTED CHANGING: STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE “OFF” STATE 5 (1) V62C2184096 MOSEL VITELIC AC Electrical Characteristics (over all temperature ranges) Read Cycle Parameter Name 70 Parameter 85 Min. Max. Min. Max. Unit tRC Read Cycle Time 70 — 85 — ns tAA Address Access Time — 70 — 85 ns tACS1 Chip Enable Access Time — 70 — 85 ns tACS2 Chip Enable Access Time — 70 — 85 ns Output Enable to Output Valid — 40 — 85 ns tCLZ1 Chip Enable to Output in Low Z 10 — 10 — ns tCLZ2 Chip Enable to Output in Low Z 10 — 10 — ns tOLZ Output Enable to Output in Low Z 5 — 10 — ns tCHZ Chip Disable to Output in High Z — 30 — 30 ns tOHZ Output Disable to Output in High Z — 25 — 30 ns tOH Output Hold from Address Change 10 — 10 — ns tOE Write Cycle Parameter Name 70 Parameter 85 Min. Max. Min. Max. Unit tWC Write Cycle Time 70 — 85 — ns tCW Chip Enable to End of Write 60 — 70 — ns tAS Address Setup Time 0 — 0 — ns tAW Address Valid to End of Write 60 — 70 — ns tWP Write Pulse Width 50 — 60 — ns tWR Write Recovery Time 0 — 0 — ns tWHZ Write to Output High-Z — 20 — 25 ns tDW Data Setup to End of Write 35 — 40 — ns tDH Data Hold from End of Write 0 — 0 — ns V62C2184096 Rev. 1.5 June 2000 6 V62C2184096 MOSEL VITELIC Switching Waveforms (Read Cycle) Read Cycle 1(1, 2, 6) tRC ADDRESS tAA OE tOE tOLZ tOH tOHZ(5) I/O Read Cycle 2(1, 2, 4, 6) tRC ADDRESS tAA tOH tOH I/O Read Cycle 3(1, 3, 4, 6) ADDRESS CE1 tACS1 CE2 I/O tACS2 tCHZ(5) tCLZ1(5) tCLZ2(5) NOTES: 1. WE = VIH. 2. CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE1 transition LOW and/or CE2 transition HIGH. 4. OE = VIL. 5. Transition is measured ±500mV from steady state with CL = 5pF. This parameter is guaranteed and not 100% tested. 6. CE2 is offered on BGA package only. V62C2184096 Rev. 1.5 June 2000 7 V62C2184096 MOSEL VITELIC Switching Waveforms (Write Cycle) Write Cycle 1 (WE Controlled)(4, 7) tWC ADDRESS tWR(2) (6) tCW CE1 tAW CE2 tCW(6) tAS WE tWP(1) OUTPUT tDW tWHZ tDH INPUT Write Cycle 2 (CE Controlled)(4, 7) tWC ADDRESS tWR(2) tCW(6) (4) CE1 tAW tCW(6) CE2 tAS WE OUTPUT High-Z tDW tDH (5) INPUT NOTES: 1. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low. All signals must be active to initiate and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 2. tWR is measured from the earlier of CE1 or WE going high, or CE2 going LOW at the end of the write cycle. 3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 4. OE = VIL or VIH. However it is recommended to keep OE at VIH during write cycle to avoid bus contention. 5. If CE1 is LOW and CE2 is HIGH during this period, I/O pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 6. tCW is measured from CE1 going low or CE2 going HIGH to the end of write. 7. CE2 is offered on BGA package only. V62C2184096 Rev. 1.5 June 2000 8 V62C2184096 MOSEL VITELIC Package Diagrams 32-Pin TSOP (Standard) Units in inches [mm] 0.787 ± 0.008 [19.99 ± 0.203] Detail “A” 0.315 TYP. (0.319 MAX.) 0.010 [.254] 8.00 TYP. (8.10 MAX.) 0.024 ± 0.004 [0.610 ± 0.102] 0.724 TYP. (0.728 MAX.) [18.39 TYP. (18.49 MAX)] 0.035 ± 0.002 [0.889 ± 0.051] SEATING PLANE 0.032 [0.813] TYP. See Detail “A” 0.047 [1.19] MAX. 0.020 [0.508] MAX. 0.020 [0.508] SBC 0.005 MIN. 0.007 MAX. 0.003 [0.076] MAX. 0.127 MIN. 0.178 MAX. 0.009 ± 0.002 [0.229 ± 0.051] 36 Ball—8x10 BGA D D1 e 6 E1 4 E 5 3 2 SYMBOL UNIT.MM A 1.05+0.15 A1 0.25±0.05 b 0.35±.0.05 c 0.30(TYP) D 10.00±0.10 D1 5.25 E 8.00±0.10 E1 3.75 e 0.75TYP aaa 0.10 1 A B C D E F H b SOLDER BALL aaa SIDE VIEW V62C2184096 Rev. 1.5 June 2000 9 A1 C A BOTTOM VIEW G MOSEL VITELIC WORLDWIDE OFFICES V62C2184096 U.S.A. TAIWAN SINGAPORE UK & IRELAND 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 NO 19 LI HSIN RD. SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. 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