DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range. @f = 2.0 GHz @f = 2.0 GHz 1 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) V V V mA mW C C Marking +0.1 0.16 −0.06 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 20 10 1.5 35 200 150 65 to +150 0.3 VCBO VCEO VEBO IC PT Tj Tstg 1.1 to 1.4 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature +0.1 1.8 dB TYP. 9 dB TYP. 2 0.65 −0.15 0.4 −0.05 • NF • Ga 0.95 FEATURES +0.1 1.5 0.95 2.9±0.2 +0.1 0.4 −0.05 2.8±0.2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IC = 0 DC Current Gain hFE * Gain Bandwidth Product fT Feed-Back Capacitance Cre ** Insertion Power Gain Maximum Available Gain 50 100 250 10 GHz VCB = 10 V, IE = 0, f = 1.0 MHz 8.0 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz MAG 10 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz NF 1.8 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz Noise Figure 2 6.0 0.8 VCE = 6 V, IC = 10 mA pF S21e 0.3 VCE = 6 V, IC = 10 mA 3.0 * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Class R43/Q * R44/R * R45/S * Marking R43 R44 R45 hFE 50 to 100 80 to 160 125 to 250 Document No. P10361EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1984 2SC3585 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 1.0 MHz 200 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-W 3 Free Air 100 50 0 100 2 1 0.7 0.5 0.3 0.2 150 TA-Ambient Temperature-°C 0.1 1 DC CURRENT GAIN vs. COLLECTOR CURRENT 20 30 20 30 INSERTION GAIN vs. COLLECTOR CURRENT 10 200 VCE = 6 V VCE = 6 V f = 2.0 GHz |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 2 3 5 7 10 VCB-Collector to Base Voltage-V 50 20 8 6 4 2 10 0.5 1 5 10 50 0 1 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 VCE = 6 V IC = 10 mA 20 MAG-Maximum Available Gain-dB |S21e|2-Insertion Gain -dB fT-Gain Bandwidth Product-MHz VCE = 6 V 2 3 5 7 10 IC-Collector Current-mA INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY 30 10 7 5 3 2 1 2 2 3 5 7 10 IC-Collector Current-mA 20 30 16 MAG |S21e| 2 12 8 4 0 0.1 0.2 0.3 0.5 7.0 1.0 f-Frequency-GHz 2.0 3.0 2SC3585 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 6 V f = 2.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 6.0 V, IC = 3.0 mA, ZO = 50 f (MHz) S11 S21 S21 S12 S12 S22 8.499 153.3 0.030 46.5 0.905 6.923 131.6 0.060 58.7 0.826 5.951 118.4 0.080 60.3 0.749 4.615 104.9 0.099 60.2 0.666 4.134 98.0 0.106 61.2 0.614 3.412 88.9 0.129 61.1 0.574 3.180 82.0 0.148 60.1 0.542 2.763 75.7 0.154 59.5 0.514 0.147 S11 23.1 40.6 51.1 58.9 65.6 73.1 82.2 84.9 88.2 2.726 70.5 0.188 58.7 0.483 0.108 104.1 2.378 64.9 0.197 56.8 0.455 S21 S21 S12 S12 S22 16.141 133.9 0.021 52.5 0.781 10.096 111.5 0.053 70.6 0.651 7.640 101.4 0.064 73.0 0.590 5.564 90.7 0.089 71.7 0.548 4.787 86.0 0.095 70.6 0.526 3.876 79.3 0.119 70.3 0.506 3.573 74.0 0.141 68.3 0.489 3.058 69.4 0.158 68.9 0.470 2.997 65.3 0.178 66.5 0.439 2.590 60.7 0.202 66.2 0.426 200 0.858 400 0.724 600 0.580 800 0.457 1000 0.362 1200 0.304 1400 0.232 1600 0.179 1800 2000 S22 13.5 21.2 27.0 28.6 30.1 30.0 31.7 35.2 40.1 42.6 VCE = 6.0 V, IC = 10.0 mA, ZO = 50 f (MHz) S11 200 0.613 400 0.406 600 0.285 800 0.214 1000 0.156 1200 0.130 1400 0.105 1600 0.065 1800 0.042 2000 0.018 S11 37.0 53.6 56.0 57.6 58.1 54.2 56.5 55.0 48.9 65.6 S22 19.4 22.4 24.0 22.8 23.3 22.1 24.8 27.9 31.4 36.5 3 2SC3585 S-PARAMETER VCE = 6 V 200 MHz Step 0.1 6 0.3 4 70 0.1 0.3 7 3 600 1.4 1.2 0.9 0.8 1.6 0.6 12 0.15 0.35 0. 18 32 0. 1.8 0.2 T EN 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 0.4 0.1 20 8 0 1. 5.0 1.0 0.2 GHz E NC TA X AC −J––O– RE –Z ) 4.0 ( 0.8 0 0.6 E IV AT 3. 0 −4 4 NE G 0. 0.4 2.0 1.8 3 0.3 7 4 0.3 6 0.1 0.2 1.6 0 1.4 −6 0.35 0.15 −70 1.2 0.1 0.36 0.14 −80 1.0 18 0.9 32 −90 0.37 0.13 0.38 0.12 0.8 0. 0.7 0 0.39 0.11 −100 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 −5 0. 0. 5 0. 0. 31 19 VCE = 6 V 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 S11e 0.2 8 0.2 2 −20 0. 0.2 S21e-FREQUENCY CONDITION 10 5.0 4.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 0.3 3.0 S22e 0.2 GHz 0.27 0.23 IC = 3 mA GH −10 2.0 0.6 0.26 0.24 z 0.4 10 ) 50 50 0.2 0.2 IC = 10 mA 0.25 0.25 ( 20 S22e 0 REACTANCE COMPONENT R –––– 0.2 ZO 20 WAVELE NG 0.2 0.8 10 2.0 GHz 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO 0.4 0 0.2 0 0.3 N 0. 5 2.0 50 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 8 0.0 2 0.4 9 0.0 1 0.4 1.0 S11e, S22e-FREQUENCY CONDITION S12e-FREQUENCY CONDITION 90° 90° 120° 0.2 GHz VCE = 6 V 120° 60° 60° 2.0 GHz IC = 10 mA IC = 10 mA 150° 30° S21e 150° 30° S12e IC = 3 mA IC = 3 mA 180° 1.0 GHz 2.0 GHz 0.2 GHz 1.0 GHz 2.0 GHz 0 4 8 12 −150° 0° 180° 20 −30° −60° −120° −90° 4 16 0 0.2 GHz 0° 0.04 0.08 0.12 0.16 0.20 −150° −30° −60° −120° −90° 2SC3585 [MEMO] 5 2SC3585 [MEMO] 6 2SC3585 [MEMO] 7 2SC3585 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5