NEC UPA805T

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA805T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
PACKAGE DRAWINGS
• Low Noise, High Gain
(Unit: mm)
• Operable at Low Voltage
2.1±0.1
• Small Feed-back Capacitance
1.25±0.1
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA805T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
0.2 –0
6
5
4
2
+0.1
µPA805T
0.15 –0
PACKING STYLE
0~0.1
QUANTITY
0.7
PART NUMBER
0.9±0.1
3
1.3
0.65 0.65
ORDERING INFORMATION
X Y
2.0±0.2
• Built-in 2 Transistors (2 × 2SC4958)
1
+0.1
Cre = 0.3 pF TYP.
PIN CONFIGURATION (Top View)
Sales Representative. (Unit sample quantity is 50 pcs.)
6
Q1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60 in 1 element
120 in 2 elements Note
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
5
4
Q2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2)
6. Base (Q1)
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3639
(O.D. No. ID-9146)
Date Published April 1995 P
Printed in Japan
©
1995
µPA805T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
Collector Cutoff Current
ICBO
VCB = 5 V, I E = 0
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
DC Current Gain
hFE
Gain Bandwidth Product
VCE = 3 V, IC = 5
fT
Feed-back Capacitance
Noise Figure
hFE Ratio
mANote 1
TYP.
75
VCB = 3 V, I E = 0, f = 1
VCE = 3 V, I C = 5 mA, f = 2 GHz
NF
VCE = 3 V, I C = 3 mA, f = 2 GHz
hFE1/hFE2
UNIT
0.1
µA
0.1
µA
12
MHzNote 2
|S21|2
MAX.
150
VCE = 3 V, I C = 7 mA, f = 2 GHz
Cre
Insertion Power Gain
MIN.
0.3
7
0.5
8.5
2.5
VCE = 3 V, IC = 5 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
GHz
pF
dB
4
dB
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T82
hFE Value
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
Free Air
200
2 Elements in Total
Collector Current IC (mA)
Total Power Dissipation PT (mW)
50
120 mW
100
Per Element
0
50
60 mW
100
40
30
20
10
0
150
Ambient Temperature TA (°C)
1
DC CURRENT GAIN
vs. COLLECTOR CURRENT
200
30
500 µ A
400 µ A
300 µ A
200 µ A
20
10
DC Current Gain hFE
40
Collector Current IC (mA)
0.5
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
100
5V
VCE = 3 V
IB = 100 µ A
0
2
4
Collector to Emitter Voltage VCE (V)
2
VCE = 3 V
6
0
0.1
0.5
1
5
10
Collector Current IC (mA)
50 100
µPA805T
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
12
f = 2 GHz
5V
12
3V
10
8
VCE = 1 V
6
4
2
0.5
1
2
5
10
Insertion Power Gain l S21e l 2 (dB)
Gain Bandwidth Product fT (GHz)
14
INSERTION GAIN
vs. COLLECTOR CURRENT
5V
8
3V
6
VCE = 1 V
1
2
5
10
20
Collector Current IC (mA)
Collector Current IC (mA)
NOISE FIGURE
vs. COLLECTOR CURRENT
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
Feed-back Capacitance Cre (pF)
f = 2 GHz
VCE = 3 V
4
Noise Figure NF (dB)
10
4
0.5
20
5
3
2
1
0
0.5
f = 2 GHz
1
2
5
Collector Current IC (mA)
10
20
50
f = 1 MHz
0.4
0.3
0.2
0.1
0
0.5
1
2
5
10
20
Collector to Base Voltage VCB (V)
3
µPA805T
S-PARAMETERS
VCE = 3 V, I C = 1 mA, ZO = 50 Ω
f
GHz
0.200
0.200
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
S11
MAG
0.9410
0.9280
0.8670
0.8150
0.7280
0.6700
0.5970
0.5430
0.5040
0.4350
0.3920
0.3560
0.3240
0.3120
0.2450
S21
ANG
–9.3
–17.7
–26.0
–33.6
–41.5
–47.3
–51.7
–56.3
–60.7
–64.4
–69.4
–71.5
–81.1
–76.7
–85.1
MAG
3.3070
3.1860
3.0130
2.8740
2.6360
2.5360
2.3840
2.2170
2.0650
2.0420
1.9690
1.8470
1.7690
1.7240
1.6690
S12
ANG
167.3
156.0
144.9
134.6
124.4
115.5
107.7
100.7
95.0
88.3
82.0
76.6
71.1
68.1
63.2
MAG
0.0330
0.0650
0.0930
0.1160
0.1330
0.1480
0.1710
0.1820
0.1990
0.2040
0.2270
0.2320
0.2420
0.2520
0.2670
S22
ANG
82.8
78.5
71.1
67.0
59.7
59.1
53.6
52.0
49.8
51.6
48.3
50.1
46.4
45.1
45.3
MAG
0.9900
0.9540
0.9250
0.8730
0.8250
0.7920
0.7640
0.7180
0.6810
0.6600
0.6210
0.6040
0.5840
0.5660
0.5410
ANG
–6.8
–13.7
–19.5
–24.9
–29.5
–33.6
–36.6
–39.9
–42.4
–46.9
–50.1
–51.8
–53.6
–57.6
–58.3
VCE = 3 V, I C = 3 mA, ZO = 50 Ω
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8480
0.7640
0.6470
0.5600
0.4650
0.4050
0.3470
0.3040
0.2790
0.2260
0.2090
0.1820
0.1600
0.1650
0.1210
–15.9
–27.6
–37.3
–44.1
–49.4
–51.9
–53.4
–55.0
–55.7
–53.6
–57.9
–53.8
–67.3
–58.5
–51.3
7.7420
6.8190
5.8070
5.0060
4.2790
3.8350
3.4290
3.0820
2.7740
2.6370
2.4900
2.2890
2.1710
2.0820
2.0030
158.5
141.1
127.1
116.0
106.6
98.8
92.4
86.6
82.3
77.1
72.2
67.9
63.7
61.3
57.3
0.0320
0.0560
0.0770
0.1000
0.1110
0.1250
0.1340
0.1570
0.1840
0.1910
0.2090
0.2260
0.2280
0.2580
0.2670
79.4
68.2
66.9
64.5
64.1
62.2
62.6
60.9
60.8
57.5
59.4
58.1
53.4
57.0
52.6
0.9640
0.8730
0.7950
0.7140
0.6540
0.6250
0.5850
0.5530
0.5450
0.5140
0.5020
0.4850
0.4680
0.4650
0.4490
–11.3
–20.5
–26.1
–30.2
–33.0
–34.4
–36.3
–38.2
–39.3
–42.2
–45.3
–46.1
–47.9
–51.6
–51.4
VCE = 3 V, I C = 5 mA, ZO = 50 Ω
4
f
GHz
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
S22
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.7750
0.6530
0.5270
0.4470
0.3590
0.3140
0.2790
0.2460
0.2190
0.1780
0.1650
0.1490
0.1370
0.1320
0.1030
–19.9
–32.4
–39.8
–45.7
–49.6
–50.3
–48.1
–46.9
–46.8
–43.6
–44.7
–37.6
–50.0
–47.6
–33.7
10.2330
8.4080
6.7610
5.5980
4.6700
4.1180
3.6300
3.2460
2.8850
2.7470
2.5810
2.3820
2.2440
2.1380
2.0440
153.0
133.2
119.0
108.5
100.0
92.7
87.1
82.1
78.1
73.7
68.8
64.8
61.4
59.0
55.3
0.0290
0.0560
0.0730
0.0880
0.1110
0.1230
0.1400
0.1540
0.1780
0.1940
0.2010
0.2240
0.2410
0.2530
0.2650
78.0
66.1
70.0
67.6
66.9
67.5
66.8
64.1
62.0
62.9
62.0
60.1
60.9
57.7
55.3
0.9310
0.8150
0.7170
0.6390
0.5950
0.5650
0.5450
0.5190
0.5210
0.5000
0.4780
0.4550
0.4710
0.4490
0.4380
–14.4
–23.3
–27.3
–30.3
–31.2
–32.4
–34.4
–35.9
–37.0
–38.9
–43.1
–43.1
–43.9
–47.9
–47.0
µPA805T
[MEMO]
5
µPA805T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
6