NEC 2SC5508-T2

PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA
• fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
2SC5508
Loose product (50 pcs)
2SC5508-T2
Taping product (3 kpcs/reel)
Packaging Style
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
115
mW
Collector Current
Ptot
Total Power Dissipation
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Symbol
Value
Unit
Junction to Case Resistance
Rth j-c
150
°C/W
Junction to Ambient Resistance
Rth j-a
650
°C/W
Note TA = +25 °C (free air)
THERMAL RESISTANCE
Item
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
©
1999
2SC5508
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
–
–
200
nA
Emitter Cut-off Current
IEBO
DC Current Gain
VEB = 1 V, IC = 0
–
–
200
nA
Note 1
VCE = 2 V, IC = 5 mA
50
70
100
–
Note 2
VCB = 2 V, IE = 0, f = 1 MHz
–
0.18
0.24
pF
VCE = 3 V, IC = 30 mA, f = 2 GHz
20
25
–
GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
–
1.1
1.5
dB
hFE
RF Characteristics
Reverse Transfer Capacitance
Gain Bandwidth Product
Noise Figure
Insertion Power Gain
Maximum Available Power Gain
Maximum Stable Power Gain
Output Power at 1 dB
Compression Point
Output Power at Third Order
Intercept Point
Cre
fT
NF
|S21e|2
VCE = 2 V, IC = 20 mA, f = 2 GHz
14
17
–
dB
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
19
–
–
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
MAG
MSG
P-1
VCE = 2 V, IC = 20 mA
Note 5
OIP3
VCE = 2 V, IC = 20 mA
Note 5
, f = 2 GHz
, f = 2 GHz
–
20
–
dB
–
11
–
dBm
–
22
–
–
Notes 1. Pulse measurement PW ≤ 350 µs, Duty cycle ≤ 2 %
2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
S21
k – k2 – 1
3. MAG =
S12
S21
4. MSG =
S12
5. Collector current when P-1 is output
hFE CLASSIFICATION
2
Rank
FB
Marking
T79
hFE
50 to 100
Preliminary Data Sheet P13865EJ1V0DS00
2SC5508
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
Total Power Dissipation vs.
Ambient Temperature, Case Temperature
Collector Current vs. DC Base Voltage
50
200
150
100
50
0
0
50
Collector Current IC (mA)
Collector Current IC (mA)
PT-TA: Free air
PT-TA: Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
PT-TC: When case temperature
is specified
25
50
75
100
125
VCE = 2 V
40
30
20
10
150
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (°C), Case Temperature TC (°C)
DC Base Voltage VBE (V)
Collector Current vs. Collector to Emitter Voltage
750 µ A 700 µ A
DC Current Gain vs. Collector Current
40
30
20
650 µ A
600 µ A
550 µ A
500 µ A
450 µ A
400 µ A
350 µ A
300 µ A
250 µ A
200 µ A
150 µ A
100 µ A
IB = 50 µ A
1.2
200
VCE = 2 V
100
DC Current Gain hFE
Total Power Dissipation PT (mW)
250
10
10
0
0
1
2
3
4
1
0.001
5
0.01
Collector to Emitter Voltage VCE (V)
0.1
1
10
100
Collector Current IC (mA)
Capacitance/fT Characteristics
Gain Bandwidth Product vs. Collector Current
30
f = 1 MHz
Gain Bandwidth Product fT (GHz)
Reverse Transfer Capacitance Cre (pF)
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.50
0.40
0.30
0.20
0.10
0
0
1.0
2.0
3.0
4.0
5.0
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1
Collector to Base Voltage VCB (V)
Preliminary Data Sheet P13865EJ1V0DS00
10
100
Collector Current IC (mA)
3
2SC5508
Gain Characteristics
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency
40
VCE = 2 V
IC = 20 mA
35
MSG
30
25
MAG
|S21e|2
20
15
10
5
0
0.1
1.0
10.0
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
30
f = 1 GHz
MAG
VCE = 2 V
25
MSG
20
Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
2
|S21e|
15
10
5
0
1
10
30
25
f = 2 GHz
VCE = 2 V
MAG
20
MSG
|S21e|2
15
10
100
5
0
1
10
Collector Current IC (mA)
100
Collector Current IC (mA)
Output Characteristics
Output Power, Collector Current vs. Input Power
Pout
15
100
10
75
5
50
IC
0
–5
–20
25
0
–15
–10
–5
0
5
Output Power Pout (dBm)
f = 2 GHz
VCE = 2 V
Collector Current IC (mA)
Output Power Pout (dBm)
f = 1 GHz
VCE = 2 V
125
20
125
100
75
10
50
5
IC
25
0
–5
–20
–15
–10
–5
Input Power Pin (dBm)
Input Power Pin (dBm)
4
Pout
15
Preliminary Data Sheet P13865EJ1V0DS00
0
0
5
Collector Current IC (mA)
Output Power, Collector Current vs. Input Power
20
2SC5508
Noise Characteristics
Ga
25
5
4
20
3
15
10
NF
0
1
10
15
2
1
0
100
0
5
1
3
30
6
25
5
20
15
2
NF
1
0
1
10
10
Noise Figure NF (dB)
Noise Figure NF (dB)
Ga
0
100
10
Noise Figure, Associated Gain vs. Collector Current
Associated Gain Ga (dB)
f = 2.0 GHz
VCE = 2 V
4
10
NF
Collector Current IC (mA)
Noise Figure, Associated Gain vs. Collector Current
5
20
3
Collector Current IC (mA)
6
25
Ga
4
5
1
30
f = 1.5 GHz
VCE = 2 V
f = 2.5 GHz
VCE = 2 V
30
25
20
4
Ga
15
3
2
5
1
0
100
0
NF
10
Associated Gain Ga (dB)
2
Noise Figure NF (dB)
Noise Figure NF (dB)
5
6
Associated Gain Ga (dB)
f = 1.0 GHz
VCE = 2 V
Noise Figure, Associated Gain vs. Collector Current
30
Associated Gain Ga (dB)
Noise Figure, Associated Gain vs. Collector Current
6
5
1
Collector Current IC (mA)
10
0
100
Collector Current IC (mA)
Preliminary Data Sheet P13865EJ1V0DS00
5
2SC5508
S PARAMETER
VCE = 2 V, IC = 3 mA
Frequency
6
S11
S21
GHz
MAG.
ANG.
MAG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.82
0.81
0.80
0.78
0.76
0.74
0.72
0.70
0.68
–9.0
–17.5
–25.8
–33.6
–41.4
–49.0
–56.8
–64.1
–71.4
10.69
10.04
9.59
9.10
8.74
8.34
8.03
7.69
7.41
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.66
0.64
0.63
0.61
0.60
0.58
0.57
0.56
0.55
0.55
–78.6
–86.1
–93.2
–100.5
–107.4
–114.6
–121.5
–128.1
–134.4
–141.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.54
0.54
0.54
0.54
0.54
0.54
0.55
0.55
0.55
0.56
3.0
4.0
5.0
6.0
7.0
8.0
0.57
0.66
0.72
0.77
0.80
0.84
S12
ANG.
S22
MAG.
ANG.
MAG.
ANG.
170.8
163.4
156.9
150.9
145.4
140.3
135.3
130.8
126.0
0.01
0.02
0.03
0.04
0.04
0.05
0.05
0.06
0.07
82.1
76.0
71.8
67.5
63.8
60.1
56.5
53.7
50.3
0.98
0.95
0.91
0.88
0.85
0.81
0.78
0.75
0.72
–6.1
–11.6
–16.1
–20.2
–23.8
–27.2
–30.5
–33.5
–36.5
7.09
6.85
6.58
6.33
6.07
5.85
5.63
5.43
5.20
5.02
121.6
117.2
113.1
108.8
105.1
101.1
97.3
93.6
90.1
86.6
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
47.1
44.7
42.2
39.4
37.3
35.3
33.3
31.4
29.7
28.6
0.69
0.66
0.63
0.60
0.58
0.55
0.53
0.50
0.48
0.46
–39.3
–41.9
–44.4
–46.8
–49.0
–51.1
–53.3
–55.3
–57.1
–59.0
–147.2
–153.0
–158.7
–164.3
–169.3
–174.3
–179.2
176.3
171.9
167.9
4.84
4.64
4.48
4.32
4.16
4.01
3.87
3.74
3.61
3.48
83.4
80.1
76.9
73.8
70.9
68.1
65.1
62.3
59.5
57.0
0.09
0.09
0.09
0.09
0.09
0.10
0.09
0.09
0.10
0.10
27.0
25.5
24.1
23.1
21.9
21.2
20.6
19.6
19.2
18.6
0.44
0.42
0.40
0.39
0.37
0.35
0.34
0.33
0.31
0.30
–60.9
–62.8
–64.3
–66.3
–68.1
–70.0
–71.9
–73.8
–75.7
–77.8
164.1
142.0
124.8
112.4
101.6
93.5
3.38
2.45
1.90
1.53
1.26
1.04
54.5
38.2
20.7
5.3
–9.4
–22.2
0.10
0.10
0.10
0.10
0.11
0.12
17.9
12.8
13.4
13.2
11.8
9.7
0.29
0.20
0.19
0.22
0.29
0.37
–80.1
–106.9
–140.5
–171.1
167.7
152.4
Preliminary Data Sheet P13865EJ1V0DS00
2SC5508
VCE = 2 V, IC = 5 mA
Frequency
S11
S21
GHz
MAG.
ANG.
MAG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.75
0.74
0.72
0.69
0.67
0.64
0.62
0.60
0.58
–11.1
–21.5
–31.7
–41.3
–50.6
–59.6
–68.5
–77.1
–85.4
14.43
13.69
12.98
12.27
11.67
11.06
10.51
9.98
9.49
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.56
0.54
0.53
0.51
0.50
0.49
0.48
0.48
0.48
0.47
–93.6
–101.6
–109.2
–116.7
–124.2
–131.5
–138.3
–144.8
–151.1
–157.2
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.48
0.48
0.48
0.48
0.49
0.50
0.50
0.51
0.52
0.53
3.0
4.0
5.0
6.0
7.0
8.0
0.54
0.64
0.70
0.75
0.79
0.82
S12
ANG.
S22
MAG.
ANG.
MAG.
ANG.
169.5
160.9
153.5
146.7
140.5
134.8
129.5
124.5
119.5
0.01
0.02
0.03
0.03
0.04
0.04
0.05
0.05
0.06
82.3
75.0
69.7
64.7
61.2
57.2
53.9
51.7
48.6
0.97
0.93
0.89
0.84
0.80
0.76
0.72
0.68
0.64
–7.6
–14.2
–19.8
–24.6
–28.9
–32.9
–36.4
–39.5
–42.7
9.00
8.58
8.17
7.77
7.40
7.07
6.74
6.45
6.16
5.90
114.9
110.4
106.2
102.1
98.3
94.5
91.0
87.7
84.2
81.1
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
45.8
43.9
42.3
40.2
38.6
37.2
36.1
35.3
33.8
33.1
0.61
0.57
0.54
0.51
0.48
0.46
0.43
0.41
0.39
0.37
–45.5
–48.0
–50.3
–52.6
–54.9
–56.8
–58.8
–60.8
–62.4
–64.4
–163.1
–168.7
–174.0
–179.0
176.2
171.9
167.6
163.8
159.9
156.5
5.65
5.41
5.20
4.99
4.78
4.60
4.42
4.27
4.11
3.97
78.1
75.0
72.2
69.4
66.7
64.2
61.5
59.0
56.5
54.1
0.08
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
32.5
31.3
30.6
29.6
29.8
28.6
28.3
27.9
27.3
27.4
0.35
0.34
0.32
0.30
0.29
0.27
0.26
0.25
0.24
0.22
–66.2
–68.0
–69.7
–71.6
–73.8
–75.9
–77.6
–80.3
–82.9
–85.1
153.2
136.4
121.3
110.6
99.7
92.7
3.85
2.74
2.13
1.72
1.42
1.19
51.8
37.4
21.1
6.5
–7.7
–19.8
0.09
0.09
0.10
0.11
0.12
0.13
26.7
22.6
21.2
18.9
15.1
11.4
0.21
0.14
0.16
0.21
0.28
0.36
–87.8
–127.0
–164.7
168.2
152.1
140.0
Preliminary Data Sheet P13865EJ1V0DS00
7
2SC5508
VCE = 2 V, IC = 10 mA
Frequency
8
S11
S21
GHz
MAG.
ANG.
MAG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.63
0.61
0.58
0.55
0.52
0.50
0.48
0.46
0.44
–15.1
–29.6
–43.0
–55.6
–67.5
–78.7
–89.4
–99.6
–108.8
20.76
19.66
18.37
17.15
15.96
14.82
13.79
12.85
11.98
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.43
0.42
0.41
0.41
0.41
0.41
0.41
0.41
0.42
0.42
–118.0
–126.5
–134.4
–142.0
–149.1
–155.7
–161.9
–167.7
–173.1
–178.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.43
0.44
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.50
3.0
4.0
5.0
6.0
7.0
8.0
0.51
0.63
0.69
0.75
0.78
0.82
S12
ANG.
S22
MAG.
ANG.
MAG.
ANG.
167.3
156.9
148.0
140.0
132.9
126.5
120.7
115.4
110.5
0.01
0.02
0.02
0.03
0.03
0.04
0.04
0.04
0.05
80.6
72.0
66.8
62.9
58.7
56.0
53.3
51.8
49.6
0.95
0.90
0.83
0.77
0.71
0.66
0.61
0.56
0.52
–10.0
–18.5
–25.6
–31.5
–36.1
–40.5
–44.1
–47.1
–49.9
11.20
10.49
9.84
9.24
8.70
8.23
7.80
7.40
7.03
6.69
105.9
101.6
97.8
94.1
90.6
87.3
84.1
81.1
78.1
75.5
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.07
0.07
48.0
47.4
46.7
45.4
45.0
44.9
43.8
43.4
42.8
42.5
0.48
0.45
0.42
0.39
0.37
0.35
0.33
0.31
0.29
0.27
–52.3
–54.5
–56.5
–58.4
–60.2
–62.0
–63.8
–65.7
–67.2
–69.3
177.2
172.7
168.6
164.7
161.1
157.8
154.3
151.3
148.2
145.5
6.38
6.09
5.82
5.59
5.34
5.12
4.93
4.75
4.56
4.40
72.8
70.2
67.6
65.2
62.8
60.5
58.2
55.9
53.8
51.6
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
42.3
41.1
41.0
40.3
40.2
38.9
38.9
39.1
37.4
37.4
0.26
0.24
0.23
0.21
0.20
0.19
0.18
0.17
0.16
0.15
–71.0
–73.1
–75.0
–77.7
–79.8
–82.6
–85.3
–88.5
–92.0
–95.6
143.0
130.0
117.3
107.8
97.5
91.1
4.28
3.01
2.34
1.90
1.57
1.32
49.6
36.5
21.3
7.9
–5.5
–17.0
0.09
0.10
0.11
0.12
0.13
0.14
36.4
31.7
28.0
23.2
17.2
12.4
0.14
0.12
0.17
0.23
0.30
0.36
–99.6
–162.6
165.5
146.7
135.7
127.0
Preliminary Data Sheet P13865EJ1V0DS00
2SC5508
VCE = 2 V, IC = 20 mA
Frequency
S11
S21
GHz
MAG.
ANG.
MAG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.48
0.46
0.43
0.41
0.39
0.38
0.37
0.36
0.36
–21.4
–41.3
–59.2
–75.4
–89.9
–102.6
–114.2
–124.7
–134.1
27.42
25.60
23.38
21.22
19.27
17.45
15.92
14.56
13.39
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.36
0.36
0.36
0.37
0.37
0.38
0.39
0.40
0.40
0.41
–142.6
–150.5
–157.4
–163.8
–169.6
–175.2
179.9
175.3
171.1
167.1
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
0.42
0.43
0.44
0.45
0.46
0.47
0.47
0.48
0.49
0.50
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.51
0.64
0.70
0.75
0.78
0.82
0.83
0.86
S12
ANG.
S22
MAG.
ANG.
MAG.
ANG.
164.9
152.5
142.0
133.1
125.5
118.9
113.2
108.1
103.6
0.01
0.02
0.02
0.02
0.03
0.03
0.04
0.04
0.04
78.5
70.7
65.2
61.7
58.8
56.6
55.4
54.7
53.5
0.93
0.85
0.77
0.69
0.62
0.56
0.51
0.46
0.43
–12.3
–22.8
–31.0
–37.2
–42.0
–46.2
–49.5
–52.0
–54.3
12.35
11.45
10.65
9.94
9.30
8.76
8.26
7.81
7.39
7.02
99.3
95.4
91.9
88.5
85.5
82.4
79.5
77.0
74.3
71.8
0.04
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
53.3
52.9
52.5
51.5
51.4
51.0
50.8
50.2
49.8
49.7
0.39
0.36
0.34
0.31
0.29
0.27
0.25
0.24
0.22
0.21
–56.4
–58.1
–60.0
–61.6
–63.3
–64.8
–66.6
–68.4
–70.3
–72.4
163.4
159.9
156.6
153.4
150.6
147.9
145.2
142.8
140.2
138.0
6.68
6.35
6.08
5.81
5.56
5.35
5.12
4.93
4.72
4.58
69.2
67.0
64.7
62.4
60.2
58.0
56.0
53.8
51.7
49.9
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
49.4
48.5
48.1
46.5
46.2
45.3
45.4
44.7
43.5
43.4
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.11
–74.6
–77.1
–79.3
–82.6
–85.9
–89.5
–93.5
–97.7
–103.0
–108.0
136.0
125.8
114.7
105.8
96.0
89.8
83.4
78.9
4.43
3.08
2.39
1.94
1.60
1.36
1.17
1.00
47.8
35.5
21.1
8.2
–4.5
–15.6
–26.8
–35.9
0.09
0.10
0.12
0.13
0.14
0.14
0.15
0.15
42.2
36.2
30.9
24.6
18.4
13.0
6.5
1.6
0.10
0.13
0.19
0.26
0.32
0.38
0.43
0.48
–113.9
172.2
149.5
135.5
126.7
119.4
114.0
109.5
Preliminary Data Sheet P13865EJ1V0DS00
9
2SC5508
NOISE PARAMETER
<Equal NF circle>
VCE = 2 V
IC = 5 mA
f = 1 GHz
VCE = 2 V
IC = 5 mA
f = 2 GHz
Unstable area
Unstable area
NFmin = 1.0 dB
Γopt
NFmin = 1.1 dB
Γopt
1.5 dB
1.5 dB
2.0
3.0
2.0
dB
2.5 dB
dB
3.0
4.0 d3.5 dB
B
3.5
4.0 dBdB
VCE = 2 V, IC = 3 mA
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.78
0.80
0.82
0.93
1.00
1.02
1.04
1.15
21.4
20.7
20.0
17.0
15.6
15.2
14.8
13.5
Γopt
Rn/50
MAG.
ANG.
0.26
0.26
0.26
0.23
0.20
0.19
0.19
0.20
31.7
32.7
34.7
57.0
78.0
86.0
94.2
138.3
0.17
0.17
0.17
0.16
0.14
0.14
0.13
0.10
VCE = 2 V, IC = 5 mA
10
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
0.93
0.94
0.96
1.03
1.07
1.09
1.10
1.17
22.5
21.8
21.1
18.1
16.7
16.3
15.9
14.3
dB
2.5 dB
dB
Γopt
Rn/50
MAG.
ANG.
0.12
0.12
0.12
0.09
0.08
0.08
0.08
0.14
28.1
28.8
31.7
71.1
106.2
118.5
130.5
–179.7
Preliminary Data Sheet P13865EJ1V0DS00
0.15
0.15
0.15
0.14
0.13
0.13
0.12
0.11
2SC5508
VCE = 2 V, IC = 10 mA
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.28
1.29
1.30
1.37
1.41
1.43
1.44
1.51
23.7
23.0
22.3
19.3
17.8
17.3
16.9
15.3
Γopt
Rn/50
MAG.
ANG.
0.07
0.07
0.08
0.13
0.16
0.17
0.19
0.25
–159.4
–157.5
–155.7
–149.2
–146.1
–145.0
–143.9
–136.7
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
VCE = 2 V, IC = 20 mA
f
(GHz)
NFmin
(dB)
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.5
1.59
1.61
1.63
1.72
1.78
1.79
1.81
1.90
24.5
23.7
23.0
19.9
18.3
17.9
17.5
15.8
Γopt
Rn/50
MAG.
ANG.
0.26
0.26
0.27
0.30
0.33
0.34
0.35
0.40
–158.1
–155.5
–153.1
–142.6
–137.3
–135.7
–134.1
–126.5
Preliminary Data Sheet P13865EJ1V0DS00
0.12
0.13
0.13
0.14
0.15
0.06
0.16
0.18
11
2SC5508
PACKAGE DRAWINGS
Flat-lead 4-pin thin super mini-mold (unit: mm)
0.40 +0.1
–0.05
2.05 ± 0.1
0.65
4
0.11 +0.1
–0.05
0.59 ± 0.05
0.30 +0.1
–0.05
(LEADS1,3,4)
1
1.30
3
0.65
0.60
1.25
0.65
T79
2.0 ± 0.1
2
1.25 ± 0.1
Pin connections
1. Emitter
2. Collector
3. Emitter
4. Base
12
Preliminary Data Sheet P13865EJ1V0DS00
2SC5508
SOLDERING CONDITIONS
Solder this product under the following recommended conditions.
For soldering methods and conditions other than those recommended, consult NEC.
Soldering Method(s)
Soldering Conditions
Recommended Conditions Symbol
Infrared reflow
Package peak temperature: 235 °C, Time: 30 sec max. (210 °C min.),
Note
Number of times: twice max., Maximum number of days: None
IR35-00-2
VPS
Package peak temperature: 215 °C, Time: 40 sec max. (200 °C min.),
Note
Number of times: twice max., Maximum number of days: None
VP15-00-2
Wave soldering
Solder bath temperature: 260 °C, Time: 10 sec max., Number of
Note
times: once, Maximum number of days: None
WS60-00-1
Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 °C,
65% RH MAX.
Caution Do not use two or more soldering methods in combination.
For details of the recommended soldering conditions, refer to information document Semiconductor Device
Mounting Technology Manual (C10535E).
Preliminary Data Sheet P13865EJ1V0DS00
13
2SC5508
[MEMO]
14
Preliminary Data Sheet P13865EJ1V0DS00
2SC5508
[MEMO]
Preliminary Data Sheet P13865EJ1V0DS00
15
2SC5508
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5