DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not 2.1 ±0.1 necessary to consider a drive current, this FET is ideal as an 1.25 ±0.1 actuator for low-current portable systems such as headphone • Because of its high input impedance, there’s no need to D S +0.1 • Gate can be driven by 1.5 V G 0.3 –0 FEATURES 2.0 ±0.2 +0.1 0.3 –0 0.65 0.65 stereos and video cameras. consider drive current Marking 0.15 –0.05 0 to 0.1 +0.1 0.9 ±0.1 components required can be reduced 0.3 • Since bias resistance can be omitted, the number of Marking: G21 EQUIVALENT CURCUIT Drain (D) Internal diode Gate (G) PIN CONNECTIONS Gate protection diode Source (S) S: Source D: Drain G: Gate ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 16 V Gate to Source Voltage VGSS VDS = 0 ±7.0 V Drain Current (DC) ID(DC) ±0.1 A Drain Current (Pulse) ID(pulse) ±0.2 A PW ≤ 10 ms, duty cycle ≤ 50 % Total Power Dissipation PT 150 mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11221EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 2SK1958 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = 16 V, VGS = 0 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±3.0 µA Gate Cut-Off Voltage VGS(off) VDS = 3 V, ID = 10 µA 0.5 1.1 V |yfs| VDS = 3 V, ID = 10 mA 20 Drain to Source On-State Resistance RDS(on)1 VGS = 1.5 V, ID = 1 mA 20 50 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 2.5 V, ID = 10 mA 7 15 Ω Drain to Source On-State Resistance RDS(on)3 VGS = 4.0 V, ID = 10 mA 5 12 Ω VDS = 3 V, VGS = 0, f = 1.0 MHz 10 pF Forward Transfer Admittance 0.8 mS Input Capacitance Ciss Output Capacitance Coss 13 pF Reverse Transfer Capacitance Crss 3 pF Turn-ON Delay Time td(on) VDD = 3 V, ID = 10 mA, VGS(on) = 3 V, 15 ns RG = 10 Ω, RL = 300 Ω 70 ns td(off) 100 ns tf 110 ns Rise Time Turn-OFF Delay Time Fall Time 2 SYMBOL tr 2SK1958 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 100 40 80 ID - Drain Current - mA dT- Derating Factor - % 2.0 V 60 40 20 1.8 V 30 20 1.6 V 10 1.4 V VGS = 1.2 V 150 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS 500 VDS = 3 V 200 TA = –25 ˚C 25 ˚C 75 ˚C 100 50 20 10 10 RDS(on) - Drain to Source On-State Resistance - Ω 5 20 50 100 ID - Drain Current - mA 200 200 TA = 25 ˚C 100 50 VGS = 1.5 V 10 2.5 V 4V 5 0.5 1 2 5 10 20 50 100 200 ID - Drain Current - mA 1 2 3 4 VDS - Drain to Source Voltage - V 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = –25 ˚C 100 50 VGS = 1.5 V 20 10 2.5 V 5 4.0 V 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 0 RDS(on) - Drain to Source On-State Resistance - Ω 60 90 120 30 TA - Ambient Temperature - ˚C 500 RDS(on) - Drain to Source On-State Resistance - Ω 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = 75 ˚C 100 50 20 VGS = 1.5 V 10 2.5 V 4.0 V 5 0.5 1 2 5 10 20 50 100 200 500 ID - Drain Current - mA 3 30 TA = – 25˚C ID = 10 mA 20 1 mA 10 1 5 6 2 3 4 VGS - Gate to Source Voltage - V 0 7 RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TOSOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 25 ˚C ID = 10 mA 20 1 mA 10 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 0 200 30 TA = 75 ˚C 20 ID = 10 mA 1 mA 10 100 50 20 10 5 2 1 0 5 6 2 3 4 1 VGS - Gate to Source Voltage - V 7 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Ciss, Crss, Coss, - Capacitance - pF 500 VGS = 0 f = 1 MHz 20 10 Ciss Coss 5 2 1 0.5 Crss 20 1 2 5 10 VDS - Drain to Source Voltage - V 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0 SWITCHING CHARACTERISTICS 50 4 7 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ISD - Diode Forward Current - mA RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω 2SK1958 50 VDD = 3 V VGS(on) = 3 V tr 200 100 tf 50 td(on) 20 10 td(off) 20 50 100 200 ID - Drain Current - mA 500 2SK1958 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SK1958 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11