DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA573T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA573T is a super-mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting 0.2 +0.1 –0 and saves mounting costs. 0.15 +0.1 –0.05 same size as SC-70 • Directly driven by ICs having a 3 V power supply 2.1 ±0.1 • Two source common MOS FET circuits in package the 1.25 ±0.1 FEATURES 0 to 0.1 • Automatic mounting supported 0.7 0.65 0.65 0.9 ±0.1 1.3 2.0 ±0.2 EQUIVALENT CIRCUIT 5 4 PIN CONNECTION 1 (G1) 1. Gate G 2. Source (common) 3. Gate 2 (G2) 4. Drain 2 (D2) 5. Drain 1 (D1) Marking: CB 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Drain to Source Voltage VDSS VGS = 0 –30 V Gate to Source Voltage VGSS VDS = 0 +7 V Drain Current (DC) ID(DC) +100 mA Drain Current (pulse) ID(pulse) +200 mA PW ≤ 10 ms, Duty Cycle ≤ 50 % Total Power Dissipation PT 200 (Total) mW Channel Temperature Tch 150 ˚C Operating Temperature Topt –55 to +80 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. G11245EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA573T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = –30 V, VGS = 0 –1.0 µA Gate Leakage Current IGSS VGS = +5 V, VDS = 0 +3.0 µA –2.3 V VGS(off) VDS = –3 V, ID = –10 µA –1.6 –1.9 |yfs| VDS = –3 V, ID = –10 mA 20 30 Drain to Source On-State Resistance RDS(on)1 VGS = –2.5 V, ID = –1 mA 55 100 Ω Drain to Source On-State Resistance RDS(on)2 VGS = –4.0 V, ID = –10 mA 20 25 Ω VDS = –5.0 V, VGS = 0, f = 1 MHz 16 pF Gate Cut-off Voltage Forward Transfer Admittance S Input Capacitance Ciss Output Capacitance Coss 13 pF Reverse Transfer Capacitance Crss 2 pF Turn-On Delay Time td(on) VDD = – 5 V, ID = –10 mA, VGS(on) = –5 V, 10 ns RG = 10 Ω, RL = 500 Ω 40 ns td(off) 130 ns tf 80 ns Rise Time tr Turn-Off Delay Time Fall Time SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS VGS DUT RL Gate voltage waveform 10 % VGS(on) 90 % VDD ID RG td(on) PG. Drain current waveform 0 VGS τ τ = 1 µs Duty Cycle ≤ 1 % 2 0 tr td(off) 10 % tf 10 % ID 90 % 90 % µPA573T TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Derating Factor - % 100 80 60 40 20 20 0 40 60 80 100 120 140 160 TC - Case Temperature - ˚C Total power dissipation 200 150 l ta To PT - Total Power Dissipation - mW 250 100 50 30 60 90 120 150 TA - Ambient Temperature - ˚C 0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE TRANSFER CHARACTERISTICS ID - Drain Current - mA –10 –2.6 VDS = –3 V Pulsed measurement –1 VGS(off) - Gate Cut-off Voltage - V –100 TA = 150 ˚C 75 ˚C 25 ˚C –0.1 180 –25 ˚C –0.01 VDS = –3 V ID = –10 µ A –2.2 –1.8 –1.4 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 VGS - Gate to Source Voltage - V –4.0 |yfs| - Forward Transfer Admittance - mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = –3 V 200 Pulsed measurement 100 TA = –25 ˚C 50 20 25 ˚C 10 75 ˚C 150 ˚C 5 2 1 –0.5 –1 –2 –5 –10 –20 –50 –100 –200 ID - Drain Current - mA –50 RDS(on) - Drain to Source On-State Resistance - Ω –0.001 –1.0 0 50 100 Tch - Channel Temperature - ˚C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed measurement 30 –10 mA 20 ID = –100 mA 10 –2 –3 –4 –5 –6 –7 VGS - Gate to Source Voltage - V –8 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 80 VGS = –2.5 V Pulsed measurement 75 ˚C TA = –25 ˚C 25 ˚C 150 ˚C 60 40 20 0 –0.3 –0.5 –1 –2 ID - Drain Current - mA –5 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω µPA573T –10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 60 40 TA = 150 ˚C 0 –1 20 Ciss 10 Coss 5 2 Crss 1 –1 –3 –10 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VDS = –5 V f = 1 MHz VDD = –5 V VGS = –5 V Rin = 10 Ω –60 50 tf td(on) td(off) 10 –10 –30 tr 100 –20 –50 –100 ID - Drain Current - mA –300 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE –100 VGS = 0 V Pulsed measurement –4.5 V –4.0 V –80 –30 –10 –3 –1 ID - Drain Current - mA ISD - Source to Drain Current - mA –5 –10 –20 ID - Drain Current - mA 300 0.5 –0.3 –60 –3.5 V –40 –3.0 V –20 –0.3 –0.1 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3 VSD - Source to Drain Voltage - V 4 –2 SWITCHING CHARACTERISTICS 40 –100 –25 ˚C 25 ˚C 75 ˚C 20 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE –200 VGS = –4 V Pulsed measurement 100 VGS = –2.5 V 0 –1 –2 –3 –4 VDS - Drain to Source Voltage - V –5 µPA573T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 µPA573T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11