DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) • Low On-Resistance 4 ± 0.2 RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) 3 ± 0.1 15.0 ± 0.3 FEATURES 3.2 ± 0.2 Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 1.3 ± 0.2 1.5 ± 0.2 2.54 0.7 ± 0.1 2.54 4.5 ± 0.2 2.7 ± 0.2 12.0 ± 0.2 10.0 ± 0.3 This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 13.5MIN. DESCRIPTION 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (pulse)* ID (DC) ID (pulse) Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) PT PT Channel Temperature Storage Temperature Tch Tstg 60 ±20 V V ±25 ±100 A A 2.0 25 150 −55 to +150 Drain W W Gate °C °C Gate Protection Diode Body Diode Source *PW ≤ 10 µs, Duty Cycle ≤ 1% The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D10623EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan © 1994 2SK2723 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS TYP. MAX. UNIT RDS (on) 1 SYMBOL VGS = 10 V, ID = 13 A 28 40 mΩ RDS (on) 2 VGS = 4 V, ID = 13 A 45 60 mΩ Gate to Source Cutoff Voltage VGS (off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance y VDS = 10 V, ID = 13 A 8.0 18 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V 830 pF Output Capacitance Coss VGS = 0 430 pF Reverse Transfer Capacitance Crss f = 1 MHz 185 pF Turn-On Delay Time td (on) ID = 13 A 21 ns Rise Time tr VGS (on) = 10 V 185 ns Turn-Off Delay Time td (off) VDD = 30 V 100 ns Fall Time tf RG = 10 Ω 110 ns Total Gate Charge QG ID = 25 A 35 nC Gate to Source Charge QGS VDD = 48 V 2.8 nC Gate to Drain Charge QGD VGS = 10 V 15 nC Body Diode Forward Voltage VF (S-D) IF = 25 A, VGS = 0 1.0 V Reverse Recovery Time tr r IF = 25 A, VGS = 0 60 ns Reverse Recovery Charge Qr r di/dt = 100 A/µs 125 nC Drain to Source On-state Resistance fs TEST CONDITIONS Test Circuit 1 Switching Time MIN. Test Circuit 2 Gate Charge D.U.T VGS RG RG = 10 Ω D.U.T IG = 2 mA VGS RL PG. VGS (on) 0 10 % Wave Form 90 % PG. VDD ID 90 % 90 % ID VGS ID Wave Form 0 t t = 1µs Duty Cycle ≤ 1 % 2 S 0 10 % 10 % td (on) tr ton td (on) tr toff 50 Ω RL VDD 2SK2723 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W 100 80 60 40 20 0 20 40 60 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID(pulse) ed R Lm 00 1m s 10 DS 100 =1 s µ n (o PW ID(DC) it ) 10 30 TC - Case Temperature - °C 100 ID - Drain Current - A 80 ID - Drain Current - A dT - Percentage of Rated Power - % 35 m s DC 1 Pulsed VGS=20V VGS=10V 80 60 40 VGS=4V 20 TC = 25 °C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V 0 2 4 6 8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed 100 10 Tch=-25°C 25°C 75°C 125°C 1 VDS=10V 0 1 2 3 4 5 6 7 8 VGS- Gate to Source Voltage - V 3 2SK2723 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1 000 Rth(ch-a)=62.5°C/W 100 10 Rth(ch-c)=5.0°C/W 1 0.1 0.01 Single Pulse 0.001 10µ 100 µ 1m 10m 100m 1 10 100 1 000 1000 VDS=10V Pulsed 100 Tch=-25°C 25°C 75°C 125°C 10 1 1 10 100 1 000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 80 Pulsed 60 VGS=4V 40 VGS=10V 20 0 1 10 ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 40 100 ID=13A 20 0 20 10 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 - 50 0 50 100 150 Tch - Channel Temperature - °C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 80 VGS=4V 60 40 VGS=10V 20 ISD - Diode Forward Current - A 100 VGS=10V 10 VGS=0 1 0.1 ID = 13A 0 - 50 0 50 100 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 1 000 Ciss Coss Crss 100 10 0.1 1 10 100 tr tf 100 10 100 10 10 IF - Dionde Current - A 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt =100A/µ s VGS = 0 1 VDD =30V VGS =10V RG =10Ω 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE CURRENT 1 0.1 td(off) td(on) VDS - Drain to Source Voltage - V 1 000 1.5 1.0 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature -°C DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 ID = 25A 14 VGS 60 40 12 10 VDD=12V 30V 48V 8 6 4 20 2 VDS 0 10 20 30 40 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2723 0 QG - Gate Charge - nC 5 2SK2723 REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. C10535E Semiconductor device package manual. C10943X Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. X10679E Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 2SK2723 [MEMO] 7 2SK2723 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11