DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING (Unit : mm) FEATURES • Low on-resistance 8 RDS(on)1 = 70 mΩ (MAX.) (VGS = –10 V, ID = –2.5 A) 5 RDS(on)2 = 160 mΩ (MAX.) (VGS = –4 V, ID = –2.0 A) 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain • Low Ciss : Ciss = 840 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE µ PA1710AG Power SOP8 6.0 ±0.3 4 4.4 0.40 +0.10 –0.05 Drain to Source Voltage (VGS = 0 V) VDSS –30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±5.0 A ID(pulse) ±20 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 0.5 ±0.2 0.10 1.27 0.78 Max. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Note1 0.8 +0.10 –0.05 5.37 Max. 0.15 PART NUMBER 0.05 Min. 1.8 Max. ORDERING INFORMATION 1.44 1 0.12 M EQUIVARENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G11497EJ1V1DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan © 1995 µ PA1710A ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –10 V, ID = –2.5 A 45 70 mΩ RDS(on)2 VGS = –4 V, ID = –2.0 A 91 160 mΩ VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.8 –2.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –2.5 A 3.0 5.6 Drain Leakage Current IDSS VDS = –30 V, VGS = 0 V –10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = –10 V 840 pF Output Capacitance Coss VGS = 0 V 570 pF 190 pF ID = –2.5 A 13 ns VGS(on) = –10 V 66 ns 82 ns 52 ns Drain to Source On-state Resistance Gate to Source Cut-off Voltage Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time f = 1 MHz tr Turn-off Delay Time VDD = –15 V td(off) Fall Time RG = 10 Ω tf S Total Gate Charge QG ID = –5.0 A 27.3 nC Gate to Source Charge QGS VDD = –24 V 2.7 nC Gate to Drain Charge VGS = –10 V 8.2 nC VF(S-D) IF = 5.0 A, VGS = 0 V 0.81 V trr IF = 5.0 A, VGS = 0 V 61 ns Qrr di/dt = 50 A/ µ s 71 nC QGD Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 ID Wave Form 2 10 % 10 % tr td (on) t t= 1 s Duty Cycle 0 ton 1% td (off) tf toff 50 RL VDD µ PA1710A TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 -10 ID(pulse) 0 1m Di ip at -4.5 V m s io n s DC Li m TA = 25 ˚C -0.1 Single Pulse -0.1 ite d -1 -10 100 120 140 160 Pulsed s 0m ss -1 10 10 80 -20 s ID(DC) 60 VGS = -10 V 1.1mm 10 ID - Drain Current - A ID - Drain Current - A d ite im0 V) L ) 1 on S( S = RD(VG Po we r 40 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA Mounted on ceramic substrate of 1200mm2 20 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C -100 Mounted on ceramic substrate of 1200mm 2 1.1mm 2.4 -100 VDS - Drain to Source Voltage - V -4 V -10 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A -100 Pulsed -10 -1 Tch = -25 ˚C 25 ˚C 125 ˚C -0.1 0 -2 -4 VDS = -10 V -6 VGS - Gate to Source Voltage - V 3 µ PA1710A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5 ˚C/W 100 10 1 0.1 0.01 Mounted on ceramic substrate of 1200 mm2 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 1.1 mm 100 1 000 PW - Pulse Width - s |yfs| - Forward Transfer Admittance - S 100 10 VDS = -10 V Pulsed TA = -25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 -0.1 -1 -100 -10 ID- Drain Current - A RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed 0.2 0.1 ID = -2.5 A 0 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4 120 VGS = -4 V -4.5 V 80 40 0 VDS = -10 V ID = -1 mA Pulsed -10 V -1 -10 ID - Drain Current - A -100 VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 160 -15 -10 -5 -2.0 -1.5 -1.0 -0.5 0 -50 0 50 100 Tch - Channel Temperature - ˚C 150 µ PA1710A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 160 100 VGS = -4 V 80 -4.5 V -10 V 40 ID = -2.5 A 0 -50 0 50 100 VGS = -4 V 10 0V 1 0.1 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Coss Crss 10 -0.1 -1 -10 -100 td(on), tr, td(off), tf - Switching Time - ns tr Ciss 100 td(off) 100 tf td(on) 10 VDS = -15 V VGS = -10 V RG = 10 1 -0.1 -1 REVERSE RECOVERY TIME vs. DIODE CURRENT VDS - Drain to Source Voltage - V -14 10 1 10 IF - Diode Current - A -100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 ID = -5.0 A di/dt = 50 A/ s VGS = 0 V 100 1 0.1 -10 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 000 1.5 1.0 1 000 VGS = 0 V f = 1 MHz 1 000 trr - Reverse Recovery Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 0.5 VF - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 100 -30 VDD = -24 V -15 V -8 V VGS -12 -10 -8 -20 -6 -10 -4 -2 VDS 0 10 20 30 40 0 VGS - Gate to Source Voltage - V 120 IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE QG - Gate Charge - nC 5 µ PA1710A [MEMO] 6 µ PA1710A [MEMO] 7 µ PA1710A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5