NEC 3SK177-T1

DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK177
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR
4 PIN MINI MOLD
PACKAGE DIMENSIONS
FEATURES
in millimeters
• Low Crss : 0.02 pF TYP.
1.5+0.2
–0.1
–4.5
V
ID
40
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
125
˚C
Storage Temperature
Tstg
–55 to +125
˚C
5˚
5˚
5˚
0.16
VG2S
Drain Current
+0.1
–0.06
Gate2 to Source Voltage
4
V
0 to 0.1
V
–4.5
0.6+0.1
–0.05
13
VG1S
0.8
VDSX
Gate 1 to Source Voltage
+0.2
1.1–0.1
Drain to Source Voltage
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
(1.9)
29.02
(1.8)
0.850.95
2
• Low NF : 1.1 dB TYP.
0.4+0.1
–0.05
• High GPS : 20 dB TYP.
0.4+0.1
–0.05
0.4+0.1
–0.05
2.8+0.2
–0.3
3
• Suitable for use as RF amplifier in UHF TV tuner.
5˚
1. Source
2. Drain
3. Gate 2
4. Gate 1
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
Drain to Source Breakdown Voltage
BVDSX
13
IDSS
5
Drain Current
TYP.
20
MAX.
UNIT
TEST CONDITIONS
V
VG1S = –4 V, VG2S = 0, ID = 10 µA
40
mA
VDS = 5 V, VG2S = 0, VG1S = 0
Gate1 to Source Cutoff Voltage
VG1S(off)
–3.5
V
VDS = 5 V, VG2S = 0, ID = 100 µA
Gate2 TO Source Cutoff Voltage
VG2S(off)
–3.5
V
VDS = 5 V, VG1S = 0, ID = 100 µA
Gate1 Reverse Current
IG1SS
10
µA
VDS = 0, VG1S = –4 V, VG2S = 0
Gate2 Reverse Current
IG2SS
10
µA
VDS = 0, VG2S = –4 V, VG1S = 0
Forward Transter Admittance
| yfs |
18
25
35
ms
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1.0 kHz
Input Capacitance
Ciss
0.5
1.0
1.5
pF
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
Reverse Transfer Capacitance
Crss
0.02
0.03
pF
f = 1 MHz
Power Gain
GPS
dB
VDS = 5 V, VG2S = 1 V, ID = 10 mA,
Noise Figure
NF
dB
f = 900 MHz
IDSS Classification
16.0
1.1
2.5
Unit: mA
Class
U71
U72
U73
U74
Marking
U71
U72
U73
U74
5 to 15
10 to 25
20 to 35
30 to 40
IDSS
20.0
Document No. P10412EJ1V0DS00 (1st edition)
(Previous No. TN-1877)
Date Published August 1995 P
Printed in Japan
©
1995
3SK177
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
VDS = 5 V
400
ID – Drain Current – mA
PT – Total Power Dissipation – mW
30
300
200
VG2S = 1.0 V
20
0.5 V
10
0V
100
–0.5 V
0
0
25
50
75
100
–1.0
125
+1.0
VG1S – Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
yfs – Forward Transfer Admittance – mS
30
yfs – Forward Transfer Admittance – mS
0
TA – Ambient Temperature – ˚C
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
0.5 V
20
0V
10
–0.5 V
VDS = 5 V
f = 1 kHz
VG2S = 1.0 V
20
VG2S = 0.5 V
10
0
–1.0
0
0
+1.0
10
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
1.0
VG2S = 1 V at ID = 5 mA
5
GPS – Power Gain – dB
VG2S = 1 V at ID = 10 mA
VG2S = 1 V
at ID = 10 mA
f = 900 MHz
GPS
0
–15
–30
0
VG2S – Gate 2 to Source Voltage – V
2
30 VDS = 5 V
10
VDS = 5 V
f = 1 MHz
15
0
–1.0
30
FOWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
NF – Noise Figure – dB
Ciss – Input Capacitance – pF
2.0
20
ID – Drain Current – mA
VG1S – Gate 1 to Source Voltage – V
+1.0
0
–45
–3.0
NF
–2.0
–1.0
0
+1.0
VG2S – Gate 2 to Source Voltage – V
+2.0
3SK177
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
25
10
GPS
20
10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
f = 900 MHz
10
0
0
5
GPS
15
10
5
NF
0
5
GPS – Power Gain – dB
NF – Noise Figure – dB
5
GPS – Power Gain – dB
NF – Noise Figure – dB
20
VDS = 5 V
VG2S = 1 V
f = 900 MHz
NF
0
5
10
ID – Drain Current – mA
10
VDS – Drain to Source Voltage – V
S-PARAMETER (VDS = 5 V, VG2S = 1 V, ID = 10 mA)
FREQUENCY
S11
S21
S12
MHz
MAG
ANG
MAG
ANG
100.0000
0.999
–3.3
2.359
177.2
200.0000
1.000
–7.2
2.389
169.3
300.0000
0.998
–9.3
2.313
400.0000
0.974
–13.4
500.0000
1.005
600.0000
MAG
S22
ANG
MAG
ANG
–122.3
0.969
–1.3
0.004
123.0
0.981
–2.9
164.4
0.000
–145.0
0.979
–3.3
2.233
160.0
0.004
79.2
0.967
–5.6
–15.7
2.420
l58.4
0.007
29.7
0.999
–5.8
0.942
–19.1
2.300
150.0
0.003
65.0
0.958
–7.7
700.0000
0.968
–22.2
2.332
145.5
0.004
45.5
0.997
–8.5
800.0000
0.920
–25.2
2.229
141.5
0.008
80.1
0.957
–9.4
900.0000
0.952
–28.9
2.447
136.8
0.004
8.3
0.999
–12.5
1000.0000
0.898
–29.4
2.303
131.1
0.001
50.9
0.968
–11.1
1100.0000
0.915
–35.1
2.348
125.8
0.004
71.4
0.984
–14.8
1200.0000
0.879
–35.2
2.367
123.5
0.000
91.1
0.989
–13.0
0.006
3
3SK177
900 MHz GPS AND NF TEST CIRCUIT
VG2S (1 V)
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50 Ω
to 10 pF
to 10 pF
OUTPUT
50 Ω
L2
L1
47 kΩ
RFC
1 000 pF
1 000 pF
L1, L2, 35 × 5 × 0.2 mm
VG1S
VDD (5 V)
VDS = 5 V, VG2S = 1 V, ID = 10 mA
4
3SK177
[MEMO]
5
3SK177
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document.
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device before using it in a particular application.
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audio and visual equipment, home electronic appliances, machine tools, personal electronic
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Anti-radioactive design is not implemented in this product.
M4 94.11
2