NEC 3SK253

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK253
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
(VDS = 3.5 V)
(Unit: mm)
• Driving Battery
V
V
Gate1 to Source Voltage
VG1S
±8*1
Gate2 to Source Voltage
VG2S
±8*1
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200*2
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
*1: RL ≥ 10 kΩ
*2: Free air
(1.9)
0.95
4
18
1
VDSX
0.6 +0.1
–0.05
Drain to Source Voltage
0.85
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
5°
5°
0.8
4 Pins Mini Mold
:
(1.8)
• Package
2.9±0.2
Embossed Type Taping
1.1 +0.2
– 0.1
• Automatically Mounting :
1.5 +0.2
–0.1
2
• Suitable for use as RF amplifier in UHF TV tuner.
0.4 +0.1
– 0.05
GPS = 18.0 dB TYP. (f = 900 MHz)
0.4 +0.1
– 0.05
• High Power Gain :
3
NF = 1.8 dB TYP. (f = 900 MHz)
0.4 +0.1
– 0.05
2.8 +0.2
–0.3
• Low Noise Figure :
5°
0.16 +0.1
– 0.06
:
0 to 0.1
• Low VDD Use
5°
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10583EJ2V0DS00 (2nd edition)
(Previous No. TD-2372)
Date Published August 1995 P
Printed in Japan
©
1993
3SK253
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
Drain to Source Breakdown Voltage
BVDSX
18
Drain Current
IDSX
0.5
Gate1 to Source Cutoff Voltage
VG1S(off)
–1.0
Gate2 to Source Cutoff Voltage
VG2S(off)
0
Gate1 Reverse Current
TYP.
MAX.
V
TEST CONDITIONS
VG1S = VG2S = –2 V, ID = 10 µA
7.0
mA
VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V
0
+1.0
V
VDS = 3.5 V, VG2S = 3 V, ID = 10 µA
0.5
1.0
V
VDS = 3.5 V, VG1S = 3 V, ID = 10 µA
IG1SS
±20
nA
VDS = 0, VG2S = 0, VG1S = ±6 V
Gate2 Reverse Current
IG2SS
±20
nA
VDS = 0, VG1S = 0, VG2S = ±6 V
Forward Transfer Admittance
|yfs|
14
19
24
mS
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 kHz
Input Capacitance
Ciss
1.5
2.0
2.5
pF
Output Capacitance
Coss
0.5
1.0
1.5
pF
Reverse Transfer Capacitance
Crss
0.01
0.03
pF
Power Gain
Gps
18
21
dB
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
Noise Figure
NF
1.8
3.0
dB
f = 900 MHz
15
IDSX Classification
Rank
2
UNIT
U1G/UAG*
Marking
U1G
IDSX (mA)
0.5 to 7.0
* Old specification / New specification
VDS = 3.5 V, VG2S = 3 V, ID = 7 mA
f = 1 MHz
3SK253
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
ID – Drain Current – mA
300
200
100
25
25
50
75
100
ID – Drain Current – mA
VG1S = 1.2 V
20
1.0 V
15
0.8 V
10
0.6 V
5
0.4 V
10
VDS – Drain to Source Voltage – V
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VDS = 3.5 V
3.0 V
2.5 V
2.0 V
15
10
1.5 V
5
1.0 V
0.5
1.0
1.5
2.0
2.5
40
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
16
2.0 V
1.5 V
8
3.0 V
2.5 V
1.0 V
0
–0.5
0
0.5
1.0
1.5
VG1S – Gate1 to Source Voltage – V
VG1S – Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
40
2.0
5.0
Ciss – Input Capacitance – pF
VDS = 3.5 V
f = 1 kHz
32
VG2S = 3.5 V
24
3.0 V
16
2.5 V
8
2.0 V
1.5 V
1.0 V
0
5
TA – Ambient Temperature – °C
20
0
0
125
VG2S = 3.5 V
|yfs| – Forward Transfer Admittance – mS
VG2S = 3.0 V
0.2 V
0
|yfs| – Forward Transfer Admittance – mS
PD – Total Power Dissipation – mW
400
10
ID – Drain Current – mA
20
4.0
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3.0 V)
f = 1 MHz
3.0
2.0
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
VG2S – Gate2 to Source Voltage – V
3
3SK253
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
20
1.5
1.0
0.5
GPS – Power Gain – dB
2.0
10
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3.0 V)
f = 1 MHz
NF – Noise Figure – dB
Coss – Output Capacitance – pF
2.5
5
ID = 7 mA
(at VDS = 3.5 V,
VG2S = 3.0 V)
f = 900 MHz
GPS
10
0
–10
NF
–20
0
–1.0
0
1.0
2.0
3.0
4.0
0
–1.0
VG2S – Gate2 to Source Voltage – V
0
1.0
2.0
VG2S – Gate2 to Source Voltage – V
GPS AND NF TEST CIRCUIT AT f = 900 MHz
VG2S
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50 Ω
to 10 pF
OUTPUT
50 Ω
to 10 pF
L2
L1
47 kΩ
1 000 pF
RFC
1 000 pF
L1, L2; 35 × 5 × 0.2 mm
VG1S
4
3.0
VDD
4.0
3SK253
[MEMO]
5
3SK253
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2