NONLINEAR MODEL SCHEMATIC NE32900 Ldx DRAIN 0.28nH Q1 Lgx GATE 0.35nH Lsx 0.025nH SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units VTO -0.825 RG 7 time seconds VTOSC 0 RD 4 capacitance farads ALPHA 7 RS 4 inductance henries BETA 0.148 RGMET 0 resistance ohms GAMMA 0.081 KF 0 voltage volts GAMMADC 0.05 AF 1 current amps Q 2.5 TNOM 27 DELTA 0.7 XTI 3 VBI 0.6 EG 1.43 IS 1e-14 VTOTC 0 N 1 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 3e-12 CDS 0.095e-12 RDB 5000 CBS 1e-9 CGSO 0.42e-12 CGDO 0.023e-12 DELTA1 0.3 DELTA2 0.6 FC 0.5 VBR Infinity MODEL RANGE Frequency: 0.5 to 26.5 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 25 mA IDSS = 54.3 mA @ VGS = 0, VDS = 2 V Date: 1/98 (1) Series IV Libra TOM Model California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE