NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.8 RG 3 time seconds VTOSC 0 RD 2 capacitance farads ALPHA 8 RS 2 inductance henries BETA 0.103 RGMET 0 resistance ohms GAMMA 0.092 KF 0 voltage volts GAMMADC 0.08 AF 1 current amps Q 2 TNOM 27 DELTA 1 XTI 3 VBI 0.715 EG 1.43 IS 3e-13 VTOTC 0 N 1.22 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 4e-12 CDS 0.13e-12 RDB 5000 CBS 1e-9 CGSO 0.3e-12 CGDO 0.02e-12 DELTA1 0.3 DELTA2 0.1 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model EXCLUSIVE NORTH AMERICAN AGENT FOR MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 California Eastern Laboratories RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -10/98