HIGH COLLECTOR TO EMITTER VOLTAGE 4 PIN ULTRA SMALL FLAT LEAD OPTOCOUPLER PS2932-1 PS2933-1 FEATURES DESCRIPTION • ULTRA SMALL FLAT LEAD PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm The PS2932-1 and PS2933-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. This device is housed in an ultra-small flat-lead package which realizes a reduction in mounting area of about 30% compared to the PS28xx series. • ISOLATION DISTANCE: 0.4 mm MIN • HIGH COLLECTOR TO EMITTER VOLTAGE: VCEO = 300 V: PS2932-1 VCEO = 350 V: PS2933-1 • HIGH ISOLATION VOLTAGE BV = 2500 Vr.m.s. • AVAILABLE ON TAPE AND REEL: PS2932-1-F3, F4: 3500 pcs/reel PS2933-1-F3, F4: 3500 pcs/reel APPLICATIONS • HYBRID IC • TELEPHONE, EXCHANGE EQUIPMENT, FAX ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Coupled Transistor Diode SYMBOLS PARAMETERS PS2932-1, PS2933-1 UNITS MIN TYP MAX 0.9 1.1 1.3 VF Forward Voltage, IF = 1 mA V IR Reverse Current, VR = 5 V µA CT Terminal Capacitance, V = 0 V, f = 1.0 MHz pF ICEO Collector to Emitter Current, VCE = 300 V (350 V)1 nA CTR Current Transfer Ratio (IC/IF), IF = 1 mA, VCE = 2 V % VCE(sat) Collector Saturation Voltage, IF = 1 mA, IC = 2 mA V 5 15 400 400 2000 4500 0.8 1 1011 RI-O Isolation Resistance, VI-O = 1.0 kVDC Ω CI-O Isolation Capacitance, V = 0 V, f = 1.0 MHz pF 0.4 Rise Time2 µs 20 µs 5 tr tF Fall VCC = 5 V, IC = 10 mA, RL = 100 Ω Time2 Notes 1. ICEO condition : PS2932-1: VCE = 300 V: PS2933-1: VCE = 350 V: 2. Test circuit for switching time: Pulse Input ( VCC ( PW = 1 ms Duty cycle = 1/10 IF VOUT 50 Ω RL = 100 Ω California Eastern Laboratories PS2932-1, PS2933-1 ABSOLUTE MAXIMUM RATINGS1 OPTOCOUPLER CONSTRUCTION (TA = 25°C unless otherwise specified) 50 0.5 0.5 60 6 V V mA mW mW/ûC 300 350 0.3 60 120 1.2 Vr.m.s. mW °C °C 2500 160 -55 to +100 -55 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25°C, RH = 60 % between input and output. CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. UNIT (MIN) Air Distance 4 mm Creepage Distance 4 mm Isolation Distance 0.4 mm OUTLINE DIMENSIONS (Units in mm) 2.5±0.3 4 3 N 1 4.1 MIN mA mA/°C A mW V PARAMETER 2 5.0±0.2 +0.1 Transistor VCEO Collector to Emitter Voltage PS2932-1 PS2933-1 Emitter to Collector Voltage VECO IC Collector Current PC Power Dissipation ∆PC/ûC Power Dissipation Derating Coupled VISO Isolation Voltage3 PT Total Power Dissipation Operating Ambient Temp. TA TSTG Storage Temperature RATINGS 0.15 -0.05 Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage UNITS 4.6±0.2 VR PARAMETERS 2.1 MAX SYMBOLS Diode IF ∆IF/°C IF (Peak) PD 0.4±0.1 0.2±0.1 1.27 TOP VIEW 1. Anode 2. Cathode 3. Emitter 4. Collector ORDERING INFORMATION PART NUMBER PACKING STYLE PS29132-1-F3 Embossed Tape 3500 pcs/reel PS2932-1-F4 PS29133-1-F3 MARKING PS29133-1-F4 RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) –Last number of Type No: 32 32 (0.35) 1.27 0.8 0.6 N –An initial of "NEC" 001 0 01 Week assembled Year assembled 5.7 4.7 4.14 No. 1 pin mark (nicked corner) –Assembly lot ( ): Reference value 24-R0.1 Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All simensions in this figure must be evaluated before use. PS2932-1, PS2933-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 140 Transistor Power Dissipation, PC (mW) Maximum Forward Current, IF (mA) 80 60 40 0.5 mA/°C 20 120 100 80 60 1.2 mW/°C 40 20 0 0 25 50 75 100 25 50 75 100 125 125 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENTvs. FORWARD VOLTAGE 60 100 50 TA = +100°C +60°C +25°C 10 Collector Current, IC (V) Forward Current, IF (mA) IF = 5 MA 0°C -25°C -50°C 1 0.1 2 mA 40 30 1 mA 20 10 0.5 mA 0.01 0.0 0.5 1.0 1.5 0 2.0 1 3 4 5 Collector to Emitter Voltage, VCE (V) Forward Voltage, VF (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100 100000 VCEO = 300 V 10000 Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 2 CTR = 1068% 1000 2290% 4360% 100 10 10 IF = 5 mA 2 mA 1 mA 0.5 mA 1 -50 -25 0 25 50 75 100 Ambient Temperature, TA (°C) 1 0.7 0.8 0.9 CollectorSaturation Voltage, VCE(sat) (V) 1.0 PS2932-1, PS2933-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 4000 1.4 VCE = 2 V Current Transfer Ratio, CTR (%) Normalized Current Transfer Ratio, CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 0.2 0.0 -50 -25 0 25 50 75 3500 Sample A 3000 B 2500 C 2000 1500 1000 500 0 0.1 100 SWITCHING TIME vs. LOAD RESISTANCE 10 100 LONG TERM CTR DEGRADATION 1.2 1000 VCC = 5 V, IC = 10 mA, CTR = 200 % IF = 1 mA tf ts td 10 TA = 25°C 1.0 tr 100 1 CTR (relative Value) Switching Time, t (µs) 1 Forward Current, IF (mA) Ambient Temperature, TA (°C) 0.8 60°C 0.6 0.4 0.2 0.1 100 1000 Load Resistance, RL (Ω) REMARK: The graphs indicate nominal characteristics. 0.0 10 10 2 10 3 10 4 Time (Hr) 10 5 10 6 PS2932-1, PS2933-1 TAPING SPECIFICATIONS (Units in mm) +0.1 5.5 ± 0.1 1.5 -0 1.55 ± 0.05 2.9 MAX 12.0 ± 0.2 2.0 ± 0.5 4.0 ± 0.1 1.75 ± 0.1 Tape Outline and Dimensions 5.3 ± 0.1 2.4±0.1 2.9 ± 0.1 4.0 ± 0.1 Tape Direction N N N N N N N PS2932-1-F4 PS2933-1-F4 N PS2932-1-F3 PS2933-1-F3 Reel Outline and Dimensions 2.0±0.5 2.0 ± 0.5 R1.0 φ100 ± 1.0 φ330±2.0 φ13.0 ± 0.2 φ21.0 ± 0.8 13.5±1.0 Packing: 3500 pcs/reel 11.9 to 15.4 Outer edge of flange PS2932-1, PS2933-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 260 ûC or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220 ûC 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260 ˚C (peak temperature) 220 ˚C to 60 s 180 ˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260 ûC or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 02/06/2002