HIGH-SPEED SWITCHING/HIGH ISOLATION VOLTAGE PHOTOCOUPLER SERIES PS2513-1 PS2513L-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. isolators containing a GaAs light emitting diode and an NPN The PS2513-1 and PS2513L-1 are optically coupled • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 120 V silicon phototransistor. • GUARANTEED MAXIMUM SWITCHING SPEED: and the PS2513L-1 is lead bending type (Gull-wing) for toff ≤ 60 µs @ IF = 5 mA, VCC = 5 V, RL = 1.9 kΩ The PS2513-1 is in a plastic DIP (Dual In-line Package) surface mount. • HIGH SPEED SWITCHING ton = 5 µs TYP @ IF= 5mA, VCC = 5 V, RL = 1.9 kΩ toff = 25 µs TYP @ IF= 5mA, VCC = 5 V, RL = 1.9 kΩ • ORDERING NUMBER OF TAPE PRODUCT: PS2513L-1-E3, E4, F3, F4 APPLICATIONS • Power Supply • Factory Automation Equipment ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Coupled Transistor Diode SYMBOLS UNITS MIN TYP MAX 1.1 1.3 VF Forward Voltage, IF = 5 mA V IR Reverse Current, VR = 5 V µA Ct Terminal Capacitance, V = 0 V, f = 1.0 MHz pF Collector to Emitter Dark Current, VCE = 120 V, IF = 0 mA nA CTR1 Current Transfer Ratio, IF = 1 mA, VCE = 5 V % 25 75 100 CTR2 (IC/IF) IF = 5 mA, VCE = 5 V % 50 125 200 VCE(sat) Collector Saturation Voltage, IF = 10 mA, IC = 2 mA V ICEO RI-O Isolation Resistance, VI-O = 1.0 kVDC Ω CI-O 5 30 100 0.3 1011 Isolation Capacitance, V = 0 V, f = 1.0 MHz pF 0.5 tr Rise Time*1, VCC = 5 V, IC = 2 mA, RL = 100 Ω µs 3 tf Fall Time*1, VCC = 5 V, IC = 2 mA, RL = 100 Ω ton toff Turn-on Time*1, VCC = 5 V, IF = 5 mA, RL = 1.9 Turn-off Time*1, VCC = 5 V, IF = 5 mA, RL = 1.9 4 µs 5 60 25 60 1. Test circuit for switching time Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 50 Ω VOUT RL = 100 Ω, 1.9 kΩ California Eastern Laboratories PS2513-1, PS2513L-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS RATINGS PS2513-1, PS2513L-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) UNITS No. 1 pin Mark 2513 NE003 Diode VR IF ∆PD/°C PD IFP Reverse Voltage Forward Current (DC) 6 60 V mA Power Dissipation Derating 1.5 mW/°C Power Dissipation Peak Forward Current*1 150 1 mW A N VECO IC ∆PC/°C PC Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation 120 V 6 V 30 mA 1.5 mW/°C 150 mW BV Isolation Voltage*2 5 000 Vr.m.s. TA Operating Ambient Temperature −55 to +100 °C Tstg Storage Temperature −55 to +150 °C NOTE: 1. PW = 100 µs, Duty Cycle = 1% 2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output 0 03 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Transistor VCEO E Assembly Lot ORDERING INFORMATION PART NUMBER PACKAGE PS2513-1 PS2513L-1 PS2513L-1-E3 PS2513L-1-E4 PS2513L-1-F3 PS2513L-1-F4 4-pin DIP PACKING STYLE Magazine case 100 pcs Embossed Tape 1 000 pcs/reel Embossed Tape 2 000 pcs/reel PS2513-1, PS2513L-1 TYPICAL PERFORMANCE CURVES (TA = 25°C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 175 150 125 100 75 50 25 0 25 50 100 75 175 150 125 100 75 50 25 0 125 25 50 75 100 125 Ambient Temperature TA (ºC) Ambient Temperature TA (ºC) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 35 30 TA = +100ºC +60ºC +25ºC Collector Current IC (mA) Forward Current IF (mA) 50 10 5 0ºC -25ºC -55ºC 1 0.5 25 A 50 20 m mA 20 15 mA 10 10 IF = 5 mA 5 0.1 0.8 0.9 1.0 0 1.1 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 10 000 VCE = 5 V Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.7 10 V 24 V 40 V 120 V 1 000 100 10 20 mA 10 10 mA 5 mA 5 2 mA 1 IF = 1 mA 0.5 1 0.1 -50 -25 0 25 50 75 Ambient Temperature,TA (°C) 100 0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) PS2513-1, PS2513L-1 TYPICAL PERFORMANCE CURVES (TA = 25°C) CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 250 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25ºC, 0.2 n=3 200 Sample A B C 150 100 50 IF = 5 mA, VCE = 5 V 0 -50 -25 0 25 50 75 0 0.1 100 0.5 1 5 10 50 Ambient Temperature TA (ºC) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 1 000 IC = 2 mA, IF = 5 mA, VCC = 10 V, VCC = 5 V, CTR = 130% CTR = 130% Switching Time t (µs) Switching Time t (µs) VCC = 5 V, Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE tr 10 tf td ts 1 tf 100 ts 10 tr td 0.1 10 50 100 500 1 1k 5 k 10 k 1k 5k Load Resistance RL (W) TURN-ON TIME vs. AMBIENT TEMPERATURE IF = 5 mA, VCC = 5 V, VCC = 5 V, RL = 1.9 kΩ, Turn-off Time toff (µs) Turn-on Time ton (µs) 100 k 100 IF = 5 mA, CTR = 150% 6 4 2 0 -50 50 k TURN-OFF TIME vs. AMBIENT TEMPERATURE 10 8 10 k Load Resistance RL (W) 80 RL = 1.9 kΩ, CTR = 150% 60 40 20 -25 0 25 50 75 Ambient Temperature TA (ºC) 100 0 -50 -25 0 25 50 75 Ambient Temperature TA (ºC) 100 PS2513-13L-1 TYPICAL PERFORMANCE CURVES (TA = 25°C) LONG TERM CTR DEGRADATION 1.2 TYP. CTR (Relative Value) 1.0 0.8 IF = 5 mA TA = 25‚ºC 0.6 IF = 5 mA TA = 60ºC 0.4 0.2 0 3 10 2 10 4 10 5 10 Time (Hr) PACKAGE DIMENSIONS (Units in mm) PS2513-1 DIP Type PS2513L-1 Lead Bending TOP VIEW 1. Anode 2. Cathode 3. Emitter 4. Collector 1 3.5±0.3 0 to 15º +0.1 0.25 -0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 2 0.1 +0.1 -0.05 2 7.62 3 0.25 +0.1 -0.05 6.5±0.5 1. Anode 2. Cathode 3. Emitter 4. Collector 1 4 4.6±0.35 3 3.5±0.3 3.2±0.4 4.15±0.4 4 6.5±0.5 4.6±0.35 TOP VIEW 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 0.15 PS2513-13L-1 TAPING SPECIFICATIONS (Units in mm) Outline and Dimensions (Tape) 1.55±0.1 Tape Direction 4.0±0.1 5.3±0.1 8.0±0.1 0.4 4.5 MAX. 10.3±0.1 1.55±0.1 1.75±0.1 4.0±0.1 φ 1.5 +0.1 -0 7.5±0.1 2.0±0.1 4.0±0.1 16.0±0.3 16.0±0.3 5.3±0.1 8.0±0.1 4.5 MAX. 10.3±0.1 7.5±0.1 φ 1.5 +0.1 -0 1.75±0.1 2.0±0.1 4.0±0.1 Outline and Dimensions (Tape) 0.4 Tape Direction PS2513L-1-E3 PS2513L-1-E4 PS2513L-1-F3 Outline and Dimensions (Reel) PS2513L-1-F4 Outline and Dimensions (Reel) 2.0±0.5 2.0±0.5 2.0±0.5 φ 13.0±0.2 21.5±1.0 Packing: 1 000 pcs/reel 15.9 to 19.4 Outer edge of flange φ 21.0±0.8 φ 80.0±5.0 R 1.0 17.5±1.0 φ 330±2.0 φ 80.0±1.0 φ 21.0±0.8 φ 254±2.0 R 1.0 2.0±0.5 φ 13.0±0.2 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel 15.9 to 19.4 Outer edge of flange PS2513-1, PS2513L-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reßow temperature 260°C or below (package surface temperature) • Time of peak reßow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reßows Three • Flux Rosin ßux containing small amount of chlorine (The ßux with a maximum chlorine content of 0.2 Wt% is recommended.) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 180 ºC 120 ºC 120 ± 30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin ßux containing small amount of chlorine (The ßux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual ßux with freon-based and chlorine-based cleaning solvent. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 06/18/2003