DATA SHEET OCMOS FETTM PS7341-1B,PS7341L-1B HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET (1-ch OCMOS FET) DESCRIPTION The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input side) and normally close (N.C.) contact MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7341L-1B has a surface mount type lead. FEATURES • High isolation voltage (BV = 3 750 Vr.m.s.) • 1 channel type (1 b output) • Low LED Operating Current (IF = 2 mA) • Designed for AC/DC switching line changer • Small package (6-pin DIP) • Low offset voltage • PS7341L-1B: Surface mount type • UL approved: File No. E72422 (S) • BSI approved: No. 8252/8253 • CSA approved: CA 101391 APPLICATIONS • Exchange equipment • Measurement equipment • FA/OA equipment The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14229EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan © 1999 PS7341-1B,PS7341L-1B PACKAGE DIMENSIONS (in millimeters) PS7341-1B 9.25±0.5 TOP VIEW 6 5 4 1 2 3 1. 2. 3. 4. 5. 6. LED Anode LED Cathode NC MOS FET Drain MOS FET Source MOS FET Drain 7.62 3.5±0.3 3.3±0.3 4.15±0.3 6.5±0.5 0.5±0.1 1.34±0.1 0.25 M 0 to 15˚ 2.54 PS7341L-1B 9.25±0.5 TOP VIEW 6 5 4 1 2 3 1. 2. 3. 4. 5. 6. LED Anode LED Cathode NC MOS FET Drain MOS FET Source MOS FET Drain 3.5±0.3 0.10+0.10 –0.05 6.5±0.5 1.34±0.1 0.25 M 2 0.9±0.25 2.54 9.60±0.4 Data Sheet P14229EJ1V0DS00 PS7341-1B,PS7341L-1B ORDERING INFORMATION Part Number Package PS7341-1B *1 Application Part Number Packing Style 8-pin DIP Magazine case 50 pcs PS7341-1B PS7341L-1B PS7341L-1B PS7341L-1B-E3 Embossed Tape 1 000 pcs/reel PS7341L-1B-E4 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Diode Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 5.0 V PD 50 mW IFP 1 A VL 400 V IL 150 mA Power Dissipation Peak Forward Current MOS FET *1 Break Down Voltage Continuous Connection A *2 Load Current Connection B 200 Connection C 300 *3 Pulse Load Current (AC/DC Connection) ILP 300 mA Power Dissipation PD 560 mW BV 3 750 Vr.m.s. Total Power Dissipation PT 610 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −40 to +125 °C Isolation Voltage *4 *1 PW = 100 µs, Duty Cycle = 1 % *2 Conditions: IF ≥ 2 mA. The following types of load connections are available. A B C 1 2 3 1 2 3 1 2 3 1 2 3 6 5 4 6 5 IL IL VL (AC/DC) L L + VL (DC) – 4 6 5 4 6 5 IL 4 IL IL L L IL + IL – + VL (DC) + VL (DC) – *3 PW = 100 ms, 1shot *4 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P14229EJ1V0DS00 3 PS7341-1B,PS7341L-1B RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Parameter Symbol MIN. TYP. MAX. Unit LED Operating Current IF 2 10 20 mA LED Off Voltage VF 0 0.5 V ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode MOS FET Coupled Symbol Conditions MIN. TYP. MAX. Unit 1.2 1.4 V 5.0 µA 10 µA Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Off-state Leakage Current ILoff IF = 10 mA, VD = 400 V 0.5 Output Capacitance Cout IF = 10 mA, VD = 0 V, f = 1 MHz 185 LED Off-state Current IFoff IL = 150 mA On-state Resistance Ron1 IF = 0 mA, IL = 10 mA Ron2 IF = 0 mA, IL = 150 mA Turn-on Time *1 ton Turn-off Time *1 toff IF = 10 mA, VO = 5 V, PW ≥ 10 ms Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz pF 2.0 mA 20 30 Ω 16 25 0.03 0.2 0.6 1.5 ms Ω 9 10 1.1 pF *1 Test Circuit for Switching Time IF Pulse Input VL Input 50 % 0 VO = 5 V Input monitor 90 % VO monitor Output Rin RL 10 % toff 4 Data Sheet P14229EJ1V0DS00 ton PS7341-1B,PS7341L-1B TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE MAXIMUM LOAD CURRENT vs. AMBIENT TEMPERATURE 300 Maximum Load Current IL (mA) Maximum Forward Current IF (mA) 100 80 60 40 20 0 –25 0 25 75 85 50 200 100 0 –25 100 0 25 75 85 50 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD VOLTAGE vs. AMBIENT TEMPERATURE OUTPUT CAPACITANCE vs. APPLIED VOLTAGE 1.8 100 200 1.6 1.4 Output Capacitance Cout (pF) Forward Voltage VF (V) f = 1 MHz IF = 50 mA 30 mA 20 mA 10 mA 5 mA 1 mA 1.2 1.0 0.8 –25 0 25 50 75 150 100 50 0 100 20 40 80 100 120 Ambient Temperature TA (˚C) Applied Voltage VD (V) OFF-STATE LEAKAGE CURRENT vs. APPLIED VOLTAGE LOAD CURRENT vs. LOAD VOLTAGE 10–4 200 IF = 0 mA TA = 80 ˚C 10–5 10–6 Load Current IL (mA) Off-state Leakage Current ILoff (A) 60 25 ˚C 10–7 10–8 0 100 200 300 400 100 –4.0 500 –2.0 0 2.0 4.0 –100 –200 Load Voltage VL (V) Applied Voltage VD (V) Data Sheet P14229EJ1V0DS00 5 PS7341-1B,PS7341L-1B NORMALIZED ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE ON-STATE RESISTANCE DISTRIBUTION 30 Normalized to 1.0 at TA = 25 ˚C, IF = 0 mA, IL = 10 mA 2.5 2.0 1.5 1.0 n = 50 pcs, IF = 0 mA, IL = 10 mA 25 Number (pcs) Normalized On-state Resistance Ron 3.0 20 15 10 5 0.5 0.0 –25 0 25 50 75 0 100 20 21 Ambient Temperature TA (˚C) On-state Resistance Ron (Ω) TURN-ON TIME vs. FORWARD CURRENT TURN-OFF TIME vs. FORWARD CURRENT 0.30 12 VO = 5 V VO = 5 V 10 Turn-off Time toff (ms) Turn-on Time ton (ms) 0.25 0.20 0.15 0.10 6 4 2 0.05 0 8 5 10 15 20 25 0 30 Forward Current IF (mA) 20 25 30 n = 50 pcs, IF = 10 mA, VO = 5 V 25 20 15 10 n = 50 pcs, IF = 10 mA, VO = 5 V 25 Number (pcs) Number (pcs) 15 TURN-OFF TIME DISTRIBUTION TURN-ON TIME DISTRIBUTION 20 15 10 5 5 0.03 0.05 0 Turn-on Time ton (ms) 6 10 Forward Current IF (mA) 30 0 5 0.5 0.7 Turn-off Time toff (ms) Data Sheet P14229EJ1V0DS00 30 PS7341-1B,PS7341L-1B NORMALIZED TURN-OFF TIME vs. AMBIENT TEMPERATURE NORMALIZED TURN-ON TIME vs. AMBIENT TEMPERATURE 3.0 Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V 2.5 2.0 1.5 1.0 0.5 0.0 –25 0 25 50 75 100 Normalized Turn-off Time toff Normalized Turn-on Time ton 3.0 Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V 2.5 2.0 1.5 1.0 0.5 0.0 –25 0 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) Remark The graphs indicate nominal characteristics. Data Sheet P14229EJ1V0DS00 7 PS7341-1B,PS7341L-1B TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS7341L-1B-E3 PS7341L-1B-E4 Outline and Dimensions (Reel) 1.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 8 Data Sheet P14229EJ1V0DS00 PS7341-1B,PS7341L-1B RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. • Products in dry pack After opening the dry pack, solder the products within the valid storage period specified on the label on the dry pack. Data Sheet P14229EJ1V0DS00 9 PS7341-1B,PS7341L-1B [MEMO] 10 Data Sheet P14229EJ1V0DS00 PS7341-1B,PS7341L-1B [MEMO] Data Sheet P14229EJ1V0DS00 11 PS7341-1B,PS7341L-1B CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. 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To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8