DATA SHEET Solid State Relay OCMOS FET PS7122-1A,-2A,PS7122L-1A,-2A 6, 8-PIN DIP, 200 V BREAK DOWN VOLTAGE 1-ch, 2-ch Optical Coupled MOS FET DESCRIPTION The PS7122-1A, -2A and PS7122L-1A, -2A are solid state relays containing GaAs LEDs on the light emitting side (input side) and MOS FETs on the output side. They are suitable for analog signal control because of their low offset and high linearity. The PS7122L-1A, -2A have a surface mount type lead. FEATURES • 1 channel type (1 a output) or 2 channel type (1 a + 1 a output) • Low LED operating current (IF = 2 mA) • Designed for AC/DC switching line changer • Small package (6, 8-pin DIP) • Low offset voltage • PS7122L-1A, -2A: Surface mount type • UL approved: File No. E72422 (S) • BSI approved: No. 8245/8246 • CSA approved: No. CA 101391 APPLICATIONS • Exchange equipment • Measurement equipment • FA/OA equipment The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11555EJ6V1DS00 (6th edition) Date Published November 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1996, 1999 PS7122-1A,-2A,PS7122L-1A,-2A PACKAGE DIMENSIONS (in millimeters) PS7122-1A PS7122L-1A TOP VIEW 9.25±0.5 1. 2. 3. 4. 5. 6. 6 5 4 1 2 3 TOP VIEW 9.25±0.5 LED Anode LED Cathode NC MOS FET Drain MOS FET Source MOS FET Drain 1. 2. 3. 4. 5. 6. 6 5 4 1 2 3 LED Anode LED Cathode NC MOS FET Drain MOS FET Source MOS FET Drain 7.62 6.5±0.5 0.10+0.10 –0.05 3.5±0.3 3.5±0.3 3.3±0.3 4.15±0.3 6.5±0.5 0.5±0.1 1.34±0.1 0.25 M 0.9±0.25 2.54 1.34±0.1 0.25 M 9.60±0.4 0 to 15˚ 2.54 PS7122-2A PS7122L-2A TOP VIEW TOP VIEW 9.25±0.5 1. 2. 3. 4. 8 7 1 2 6 3 5. 6. 7. 8. LED Anode LED Cathode LED Anode LED Cathode 9.25±0.5 5 4 MOS FET MOS FET MOS FET MOS FET 1. 2. 3. 4. 8 7 1 2 LED Anode LED Cathode LED Anode LED Cathode 6 3 5. 6. 7. 8. 5 4 MOS FET MOS FET MOS FET MOS FET 7.62 2 0.10+0.10 –0.05 1.34±0.1 0.25 M 0 to 15˚ 0.5±0.1 1.34±0.1 0.25 M 6.5±0.5 3.5±0.3 3.3±0.3 4.15±0.3 3.5±0.3 6.5±0.5 2.54 Data Sheet P11555EJ6V1DS00 2.54 0.9±0.25 9.60±0.4 PS7122-1A,-2A,PS7122L-1A,-2A ORDERING INFORMATION Part Number PS7122-1A Package 6-pin DIP Packing Style Magazine case 50 pcs PS7122L-1A Application Part Number *1 PS7122-1A PS7122L-1A PS7122L-1A-E3 Embossed Tape 1 000 pcs/reel PS7122L-1A-E4 PS7122-2A 8-pin DIP Magazine case 50 pcs PS7122L-2A PS7122L-2A-E3 PS7122-2A PS7122L-2A Embossed Tape 1 000 pcs/reel PS7122L-2A-E4 *1 For the application of the Safety Standard, following part number should be used. Data Sheet P11555EJ6V1DS00 3 PS7122-1A,-2A,PS7122L-1A,-2A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol PS7122-2A, PS7122L-2A Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 5.0 V PD 50 mW/ch IFP 1 A VL 200 V IL 200 mA Power Dissipation Peak Forward Current MOS FET PS7122-1A, PS7122L-1A *1 Break Down Voltage Continuous Load Current Connection A *2 Pulse Load Current Connection B 350 − Connection C 500 − *3 400 ILP mA (AC/DC Connection) Power Dissipation Isolation Voltage PD *4 560 375 BV mW/ch 1 500 610 Vr.m.s. Total Power Dissipation PT 850 mW Operating Ambient Temperature TA −40 to +80 °C Storage Temperature Tstg −40 to +100 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 Conditions: IF ≥ 2 mA. The following types of load connections are available. Connection A Connection B Connection C 1 2 3 1 2 3 1 2 3 1 2 3 6 5 4 6 5 IL IL VL (AC/DC) L L + VL (DC) – 4 6 5 4 6 5 IL 4 IL IL L L IL + IL – + VL (DC) + VL (DC) – *3 PW = 100 ms, 1 shot *4 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 Data Sheet P11555EJ6V1DS00 PS7122-1A,-2A,PS7122L-1A,-2A RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Parameter Symbol MIN. TYP. MAX. Unit LED Operating Current IF 2 10 20 mA LED Off Voltage VF 0 0.5 V ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode MOS FET Coupled Symbol Conditions MIN. TYP. MAX. Unit 1.2 1.4 V 5.0 µA 1.0 µA Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Off-state Leakage Current ILoff VD = 200 V 0.03 Output Capacitance Cout VD = 0 V, f = 1 MHz 165 LED On-state Current IFon IL = 200 mA On-state Resistance Ron1 IF = 10 mA, IL = 10 mA Ron2 IF = 10 mA, IL = 200 mA, t ≤ 10 ms Turn-on Time *1 ton IF = 10 mA, VO = 5 V, PW ≥ 10 ms Turn-off Time *1 toff Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz pF/ch 2.0 mA 3.0 5.0 Ω 0.6 2.0 ms 0.06 0.2 Ω 9 10 1.1 pF/ch *1 Test Circuit for Switching Time IF Pulse Input VL 50 % Input 0 VO = 5 V Input monitor 90 % VO monitor Output Rin RL 10 % ton Data Sheet P11555EJ6V1DS00 toff 5 PS7122-1A,-2A,PS7122L-1A,-2A TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE MAXIMUM LOAD CURRENT vs. AMBIENT TEMPERATURE 300 Maximum Load Current IL (mA) Maximum Forward Current IF (mA) 100 80 60 40 20 0 –25 0 25 7580 50 250 200 150 100 50 0 –25 100 0 25 7580 50 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD VOLTAGE vs. AMBIENT TEMPERATURE OUTPUT CAPACITANCE vs. APPLIED VOLTAGE 1.6 100 250 1.4 IF = 50 mA 30 mA 20 mA 10 mA 5 mA 1.2 1.0 1 mA 0.8 –25 0 25 50 75 Output Capacitance Cout (pF) Forward Voltage VF (V) f = 1 MHz 100 200 150 100 50 0 20 40 60 Applied Voltage VD (V) OFF-STATE LEAKAGE CURRENT vs. APPLIED VOLTAGE LOAD CURRENT vs. LOAD VOLTAGE TA = 80 ˚C 10–7 Load Current IL (mA) Off-state Leakage Current ILoff (A) 10 –6 25 ˚C 10–8 100 –1.0 –0.5 0 –100 10–9 –200 10–10 0 50 100 150 200 250 Load Voltage VL (V) Applied Voltage VD (V) 6 IF =10 mA 200 10 120 Ambient Temperature TA (˚C) 10–4 –5 100 80 Data Sheet P11555EJ6V1DS00 0.5 1.0 PS7122-1A,-2A,PS7122L-1A,-2A NORMALIZED ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE ON-STATE RESISTANCE DISTRIBUTION 30 Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, IL = 10 mA 2.5 2.0 1.5 1.0 n = 50 pcs, IF = 10 mA, IL = 10 mA 25 Number (pcs) Normalized On-state Resistance Ron 3.0 0.5 20 15 10 5 0.0 –25 0 25 50 0 100 75 2.8 2.9 3.0 3.1 Ambient Temperature TA (˚C) On-state Resistance Ron (Ω) TURN-ON TIME vs. FORWARD CURRENT TURN-OFF TIME vs. FORWARD CURRENT 25 0.5 VO = 5 V 20 Turn-off Time toff (ms) Turn-on Time ton (ms) VO = 5 V 15 10 5 0 5 10 15 20 0.3 0.2 0.1 0 30 25 0.4 10 15 25 20 30 TURN-OFF TIME DISTRIBUTION TURN-ON TIME DISTRIBUTION 30 30 n = 50 pcs, IF = 10 mA, VO = 5 V 25 15 10 5 n = 50 pcs, IF = 10 mA, VO = 5 V 25 Number (pcs) 20 0 5 Forward Current IF (mA) Forward Current IF (mA) Number (pcs) 3.2 20 15 10 5 0.4 0.5 0.6 0.7 0.8 0 Turn-on Time ton (ms) 0.04 0.08 Turn-off Time toff (ms) Data Sheet P11555EJ6V1DS00 7 PS7122-1A,-2A,PS7122L-1A,-2A NORMALIZED TURN-ON TIME vs. AMBIENT TEMPERATURE Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V 2.5 2.0 1.5 1.0 0.5 0.0 –25 0 25 50 75 100 3.0 Normalized Turn-off Time toff Normalized Turn-on Time ton 3.0 NORMALIZED TURN-OFF TIME vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0.0 –25 Ambient Temperature TA (˚C) 0 25 50 75 Ambient Temperature TA (˚C) Remark The graphs indicate nominal characteristics. 8 Normalized to 1.0 at TA = 25 ˚C, IF = 10 mA, VO = 5 V Data Sheet P11555EJ6V1DS00 100 PS7122-1A,-2A,PS7122L-1A,-2A TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS7122L-1A-E3 PS7122L-2A-E3 PS7122L-1A-E4 PS7122L-2A-E4 Outline and Dimensions (Reel) 1.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel Data Sheet P11555EJ6V1DS00 9 PS7122-1A,-2A,PS7122L-1A,-2A RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Two • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 10 Data Sheet P11555EJ6V1DS00 PS7122-1A,-2A,PS7122L-1A,-2A [MEMO] Data Sheet P11555EJ6V1DS00 11 PS7122-1A,-2A,PS7122L-1A,-2A CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8