NJG1106KB2 800MHz BAND LNA GaAs MMIC nGENERAL DESCRIPTION NJG1106KB2 is a low noise amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low noise figure of 1.3dB and low current consumption of 3mA at low supply voltage of 2.7V. NJG1106KB2 includes internal self-bias circuit and input DC blocking capacitor in a ultra small and ultra thin package of FLP6-B2. nFEATURES lLow voltage operation lLow current consumption lSmall signal gain lLow noise figure lHigh Input IP3 lHigh Output IP3 lUltra small & ultra thin package nPACKAGE OUTLINE NJG1106KB2 +2.7V typ. 2.5mA typ. 17dB typ. @f=820MHz 1.3dB typ. @f=820MHz -4dBm typ. @f=820.0+820.1MHz +13dBm typ. @f=820+820.1MHz FLP6-B2 (Mount Size: 2.1x2.0x0.75mm) nPIN CONFIGURATION KB2 Type (Top View) 4 5 6 3 AMP 2 PIN CONNECTION 1.RFout 2.GND 3.EXTCAP 4.GND 5.GND 6.RFin 1 Package orientation mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1106KB2 nABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Voltage VDD Input Power Pin Power Dissipation PD Operating Temp. Storage Temp. (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS CONDITIONS 6.0 V VDD=2.7V +15 dBm Tj=125°C, mount on PCB FR4 20X20X0.2mm 450 mW Topr -40 ~ +85 °C Tstg -55 ~ +125 °C nELECTRICAL CHARACTERISTICS (VDD=2.7V, f=820MHz, Ta=+25°C, Zs=Zl=50Ω) CONDITIONS MIN TYP MAX UNITS PARAMETER SYMBOL Operating frequency freq 800 820 1000 MHz Drain voltage VDD 2.5 2.7 5.5 V Operating current IDD - 2.5 3.4 mA Small signal gain Gain 15.0 17.0 19.0 dB Gain flatness Gflat - 0.5 1.0 dB Noise figure NF - 1.3 1.5 dB Pout at 1dB gain compression point Input 3rd order Intercept point Output 3rd order Intercept point RF Input port VSWR RF Output port VSWR -2- RF OFF f=810~885MHz P-1dB VDD=2.7V, f=820MHz -4.0 0.0 - dBm IIP3 f=820.0+820.1MHz -8.0 -4.0 - dBm OIP3 f=820.0+820.1MHz +9.0 +13.0 - dBm VSWRi VDD=2.7V, f=820MHz - 1.5 2.0 VSWRo VDD=2.7V, f=820MHz - 1.5 2.0 NJG1106KB2 nTERMINAL INFORMATION Pin 1 Function RFout 2,4,5 GND 3 EXTCAP 6 RFin Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer to “RECOMMENDED CIRCUIT”) Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. An external bypass capacitor is required. (Please refer to “RECOMMENDED CIRCUIT”) RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. (Please refer to “RECOMMENDED CIRCUIT”) -3- NJG1106KB2 nTYPICAL CHARACTERISTICS NJG1106KB2 Gain,NF vs. Freq VDD=2.7V,IDD=2.9mA,Ta=25 oC NJG1106KB2 S11,S21,S12,S22 vs. Freq o VDD=2.7V, IDD=2.9mA, Ta=25 C 3.0 20 25 Gain 50 20 40 1.5 5 15 30 10 20 5 10 0 0 S11 -5 -10 S22 -10 -20 -15 NF -30 S12 -20 0 700 750 800 850 900 950 1.0 1000 0 500 1000 NJG1106KB2 Pout,Gain vs. Pin NJG1106KB2 Pout,IM3 vs. Pin o VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25 C o 20 20 5 Gain 0 0 15 -5 -10 10 Pout Pout (dBm) Pout Gain (dB) Pout (dBm) P-1dB=-0.5dBm -20 -40 -60 OIP3=+13.7dBm IIP3=-4.1dBm -80 -20 5.0 -40 -35 -50 2000 1500 Freq (GHz) VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25 C -25 -45 -40 -25 freq (GHz) -15 -30 -25 -20 Pin (dBm) -15 -10 -5 -100 -45 IM3 -40 -35 -30 -25 -20 -15 -10 Pin (dBm) Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm -4- S12 (dB) Gain (dB) 2.0 10 NF (dB) 2.5 15 S11,S21,S22 (dB) S21 -5 NJG1106KB2 nTYPICAL CHARACTERISTICS NJG1106KB2 IDD vs. VDD NJG1106KB2 Gain,NF vs. VDD o o Freq=820MHz,Ta=25 C Freq=820MHz,Ta=25 C 18.0 2.0 3.2 17.8 1.8 3.1 17.6 1.6 3.0 17.4 1.4 IDD (mA) NF (dB) Gain (dB) Gain 2.9 NF 17.2 17.0 2.0 2.8 1.2 2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.7 2.0 1.0 6.0 2.5 3.0 3.5 VDD (V) 4.0 4.5 5.0 5.5 6.0 VDD (V) NJG1106KB2 OIP3,IIP3 vs. VDD NJG1106KB2 OIP3,IIP3 vs. Freq Freq=820+820.1MHz, Ta=25oC VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25 oC 20 0 20 0 -2 18 -2 14 -6 12 -8 16 -4 IIP3 14 -6 IIP3 (dBm) -4 OIP3 OIP3 (dBm) OIP3(dBm) 16 IIP3 (dBm) IIP3 18 OIP3 10 2.0 2.5 3.0 3.5 4.0 4.5 VDD (V) 5.0 5.5 -10 6.0 12 10 800 -8 820 840 860 880 -10 900 freq (MHz) Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm -5- NJG1106KB2 nTYPICAL CHARACTERISTICS NJG1106KB2 Gain,NF vs. Ta VDD=2.7V,Freq=820MHz 20 NJG1106KB2 IDD vs. Ta VDD=2.7V,Freq=820MHz 4.0 5.0 16 3.0 14 2.0 12 1.0 3.5 IDD (mA) 4.0 NF (dB) Gain (dB) Gain 18 3.0 2.5 NF 10 -50 0 50 2.0 -50 0.0 100 o Ta ( C) 0 Ta ( oC) 50 NJG1106KB2 OIP3,IIP3 vs. Ta 0 18 -2 IIP3 16 -4 14 -6 OIP3 12 10 -50 -8 0 o Ta ( C) -6- 50 -10 100 IIP3 (dBm) OIP3 (dBm) VDD=2.7V,Freq=820+820.1MHz 20 Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 IIP3 = OIP3 - Gain @ Pin=-40dBm 100 NJG1106KB2 nTYPICAL CHARACTERISTICS NJG1106KB2 S11 vs. Freq(to 20GHz) NJG1106KB2 S22 vs. Freq(to 20GHz) o o VDD=2.7V, IDD=2.9mA, Ta=25 C 25 25 20 20 15 15 10 10 5 5 S22 (dB) S11 (dB) VDD=2.7V, IDD=2.9mA, Ta=25 C 0 -5 0 -5 -10 -10 -15 -15 -20 -20 -25 0 5 10 15 -25 20 0 5 Freq (GHz) NJG1106KB2 S21 vs. Freq(to 20GHz) 50 20 40 15 30 10 20 5 10 S12 (dB) S21 (dB) 25 0 -5 0 -10 -10 -20 -15 -30 -20 -40 5 10 Freq (GHz) 20 VDD=2.7V, IDD=2.9mA, Ta=25 oC VDD=2.7V, IDD=2.9mA, Ta=25 C 0 15 NJG1106KB2 S12 vs. Freq(to 20GHz) o -25 10 Freq (GHz) 15 20 -50 0 5 10 15 20 Freq (GHz) -7- NJG1106KB2 nTYPICAL CHARACTERISTICS Scattering Parameter Table VDD=2.7V, IDD=2.9mA, Zo=50Ω S11 S21 Freq mag ang mag ang (MHz) (units) (deg) (units) (deg) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.996 0.995 0.993 0.982 0.964 0.947 0.930 0.914 0.897 0.884 0.874 0.860 0.851 0.838 0.831 0.822 0.815 0.809 0.803 0.796 -1.8 -4.8 -7.2 -9.6 -11.7 -13.9 -15.5 -17.3 -18.7 -20.2 -21.5 -22.6 -23.8 -24.9 -26.1 -27.0 -28.2 -29.7 -30.6 -31.8 1.298 1.846 2.029 2.056 2.029 1.964 1.892 1.816 1.733 1.659 1.582 1.513 1.449 1.385 1.330 1.279 1.235 1.194 1.153 1.120 -142.2 -164.1 179.1 165.7 155.1 145.6 137.5 130.0 123.2 117.0 111.1 105.8 100.7 96.1 91.4 87.0 83.0 78.9 75.2 71.8 4 S12 S22 mag (units) ang (deg) mag (units) ang (deg) 0.005 0.003 0.006 0.006 0.007 0.006 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.014 0.014 0.016 0.017 0.018 0.019 70.0 -6.6 38.5 36.0 47.8 54.7 55.8 60.4 62.5 61.0 69.4 70.7 72.6 80.1 77.4 84.4 85.1 90.7 87.7 91.9 0.967 0.953 0.942 0.939 0.931 0.928 0.918 0.916 0.906 0.903 0.898 0.893 0.886 0.883 0.878 0.874 0.871 0.869 0.865 0.864 -2.3 -3.7 -4.9 -6.1 -7.3 -8.5 -9.7 -10.9 -12.2 -13.4 -14.7 -16.1 -17.3 -18.9 -20.0 -21.3 -22.7 -24.1 -25.4 -26.8 3 1000pF 5 Network Analyzer Port1 AMP 2 1 6 Network Analyzer Port2 Reference Plane Note VDD (=2.8V) is supplied through “BIAS CONNECT (PORT2)” of Network Analyzer. -8- NJG1106KB2 nRECOMMENDED CIRCUIT (f=810~885MHz) ( Top View ) 4 3 C3 5 2 AMP L3 L2 6 RF Input L1 C1 1 RF Output L4 VDD=2.7V C2 -9- NJG1106KB2 nRECOMMENDED PCB DESIGN (Top View) C3 RF IN L2 NJG1106 L4 C1 L3 L1 RF OUT C2 PCB SIZE: 14.0x14.0mm PCB: FR4, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω) Parts List (f=810~885MHz) Parts ID Constant Comment L1 82nH TAIYO-YUDEN HK1005 Series L2 33nH TAIYO-YUDEN HK1608 Series L3 39nH TAIYO-YUDEN HK1005 Series L4 12nH TAIYO-YUDEN HK1005 Series C1 4pF MURATA GRM36 Series C2, C3 1000pF MURATA GRM36 Series NOTES: 1. Please use L1 to stabilize amplifier. This element pull input impedance down at low frequency region (up to 400MHz). 2. Please use chip inductor which has low resistance at input circuit. (A low resistance inductor of 1608 size (1.6mm x 0.8mm) is used in the circuit example above.) Because any losses at input circuit cause NF degradation. 3. The capacitor C3 is a bypass capacitor connected with self-biasing resistor. The small signal gain can be controlled by this capacitor. (Gain=18.5dB @ C3=30pF) - 10 - NJG1106KB2 nPACKAGE OUTLINE (FLP6-B2) 0.75±0.05 2.0±0.1 5 4 2.1±0.1 0.2 1.7±0.1 0.2 6 +0.1 0.15-0.05 1 2 3 0.65 0.1 0.1 0.65 +0.1 0.2-0.05 Lead material Lead surface finish Molding material UNIT Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : Copper : Solder plating : Epoxy resin : mm : 6.5mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 11 -