NJG1112PB1 PDC Dual Band LNA GaAs MMIC QGENERAL DESCRIPTION The NJG1112PB1 is a dual band low noise amplifier for 800MHz and 1500MHz band. The band switching between 800MHz CD, A Band and 1500MHz is made by 2 bit control signal by using inverter circuit included in this IC. The ultra small and thin FFP12-B1 is applied. QFEATURES OLow voltage operation OLow current consumption QPACKAGE OUTLINE NJG1112PB1 +2.8V typ. +2.6mA typ.@800MHz CD, A Band +2.8mA [email protected] Band 20uA typ. 18.5dB typ. @f=830MHz 18dB typ. @f=878MHz 17.5dB typ. @f=1490MHz 1.6dB typ. @f=830MHz 1.5dB typ. @f=878MHz 1.15dB typ. @f=1490MHz -7dBm typ. @f=830.0+830.1MHz -7dBm typ. @f=878.0+878.1MHz -5dBm typ. @f=1490.0+1490.1MHz FFP12-B1 (Package size: 2.0x2.0x0.85mm) OLow control current OHigh gain OLow noise figure OHigh input IP3 OUltra small & thin package QPIN CONFIGURATION (Top View) 9 8 7 10 6 11 5 12 4 1 2 3 Pin Connection 1.GND 2.VCTL1 3.VCTL2 4.VINV 5.RFOUT1(800MHz Band) 6.GND 7.RFOUT2(1.5GHz Band) 8.GND 9.RFIN3(1.5GHz Band) 10.RFIN2(800MHz A Band) 11.GND 12.RFIN1(800MHz CD Band) Note: The specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1112PB1 QABSOLUTE MAXIMUM RATINGS (Ta=25°C, Zs=Zl=50Ω) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Operating voltage VDD 5.0 V Inverter supply voltage VINV 5.0 V Control voltage VCTL VINV V Input power Pin +15 dBm Power dissipation PD 300 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+125 °C VDD=2.8V QELECTRICAL CHARACTERISTICS 1 (DC) GENERAL CONDITIONS: Ta=+25°C, Zs=Zl=50Ω, VDD=VINV=2.8V PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.8 4.5 V Inverter supply voltage VINV 2.5 2.8 4.5 V Control voltage1 (High) VCTL1(H) 2.0 2.4 VINV V Control voltage1 (Low) VCTL1(L) 0.0 0.0 0.8 V Control voltage2 (High) VCTL2(H) 2.0 2.4 VINV V Control voltage2 (Low) VCTL2(L) 0.0 0.0 0.8 V Operating current Inverter current Control current IDD1 RF OFF, VCTL1=0V, VCTL2=0V - 2.6 3.25 mA IDD2 RF OFF, VCTL1=2.4V, VCTL2=0V - 2.6 3.25 mA IDD3 RF OFF, VCTL1=0V, VCTL2=2.4V - 2.8 3.5 mA IINV RF OFF - 190 250 uA ICTL1 VCTL1=2.4V, VCTL2=0V - 20 60 uA ICTL2 VCTL2=2.4V, VCTL1=0V - 20 60 uA QTRUTH TABLE Control Voltage: “H”=VCTL1(H), VCTL2(H), “L”=VCTL1(L), VCTL2(L) -2- VCTL1 L H L VCTL2 L L H 800MHz CD Band ON OFF OFF 800MHz A Band OFF ON OFF 1.5GHz Band OFF OFF ON NJG1112PB1 QELECTRICAL CHARACTERISTICS 2 (800MHz CD BAND RF) GENERAL CONDITIONS: Ta=+25°C, Zs=Zl=50Ω, VDD=VINV=2.8V, VCTL1=VCTL2=0V, freq=830MHz, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating frequency freq 810 830 843 MHz Small signal gain Gain 17.5 18.5 19.5 dB Gain flatness Gflat freq=810~843MHz - 0.5 1.0 dB Noise figure Pout at 1dB gain compression point Input 3rd order intercept point NF SSB NF - 1.6 1.8 dB -21 -18 - dBm Isolation P-1dB(IN) IIP3 f1=freq, f2=freq+100kHz, Pin=-36dBm -10 -7 - dBm ISO -S12, freq=680~713MHz 25 30 - dB RF Input VSWR VSWRI - 1.5 2.0 - RF Output VSWR VSWRo - 1.5 2.0 - QELECTRICAL CHARACTERISTICS 3 (800MHz A BAND RF) GENERAL CONDITIONS: Ta=+25°C, Zs=Zl=50Ω, VDD=VINV=2.8V, VCTL1=2.4V, VCTL2=0V, freq=878MHz, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating frequency freq 870 878 885 MHz Small signal gain Gain 17.0 18.0 19.0 dB Gain flatness Gflat freq=870~885MHz - 0.5 1.0 dB Noise figure Pout at 1dB gain compression point Input 3rd order intercept point NF SSB NF - 1.5 1.7 dB -21 -18 - dBm Isolation P-1dB(IN) IIP3 f1=freq, f2=freq+100kHz, Pin=-36dBm -10 -7 - dBm ISO -S12, freq=740~755MHz 25 30 - dB RF Input VSWR VSWRI - 2.0 2.5 - RF Output VSWR VSWRo - 1.5 2.0 - -3- NJG1112PB1 QELECTRICAL CHARACTERISTICS 4 (1500MHz BAND RF) GENERAL CONDITIONS: Ta=+25°C, Zs=Zl=50Ω, VDD=VINV=2.8V, VCTL1=0V, VCTL2=2.4V, freq=1490MHz, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating frequency freq 1477 1490 1501 MHz Small signal gain Gain 16.5 17.5 18.5 dB Gain flatness Gflat freq=1477~1501MHz - 0.5 1.0 dB Noise figure Pout at 1dB gain compression point Input 3rd order intercept point NF SSB NF - 1.15 1.35 dB -19 -16 - dBm Isolation P-1dB(IN) IIP3 f1=freq, f2=freq+100kHz, Pin=-36dBm -8 -5 - dBm ISO -S12, freq=1347~1371MHz 20 25 - dB RF Input VSWR VSWRI - 1.5 2.0 - RF Output VSWR VSWRo - 1.5 2.0 - -4- NJG1112PB1 QTERMINAL INFORMATION Pin Symbol 1 GND 2 VCTL1 3 VCTL2 4 VINV 5 RFOUT1 6 GND 7 RFOUT2 8 GND 9 RFIN3 10 RFIN2 11 GND 12 RFIN1 Description Ground terminal (0V). Control voltage input terminal. This terminal is set to 800MHz CD band or 800MHz A band to select. Control voltage input terminal. This terminal is set to 800MHz band or 1.5GHz band to select. Power supply terminal of the inverter circuit. Output terminal of 800MHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L7) to connect power supply. (Please see application circuit.) Ground terminal (0V). Output terminal of 1.5GHz band. This terminal is also the power supply terminal of the LNA, please use inductor (L6) to connect power supply. (Please see application circuit.) Ground terminal (0V). Output terminal of 1.5GHz band. The DC blocking capacitor is not required. Output terminal of 800MHz A band. The DC blocking capacitor is not required. Ground terminal (0V). Output terminal of 800MHz CD band. The DC blocking capacitor is not required. NOTE: 1) Ground terminal (1, 6, 8, 11pin) should be connected to ground plane by multiple via holes for good grounding. 2) Please connect bypass capacitors possible close to inductors (L6, L7). -5- NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz CD Band) Pout vs. Pin,Gain NF,Gain vs. freq DD INV =2.8V,V CTL1 =V o ( V =V =2.8V,V =V =L,I =2.8mA,fRF=830MHz,Ta=25 C ) DD INV CTL1 CTL2 DD 15 25 =L,I =2.8mA,Ta=25 C ) CTL2 DD 20 3.0 Gain 15 NF(Include LOSS) Pout (dBm) 10 2.0 15 P-1dBout=+0.2dBm 0 10 -5 5 Pout 0 -10 5 1.5 20 5 Gain (dB) 2.5 NF (dB) Gain 10 Gain (dB) ( V =V o NF(De-embedded LOSS) 1dB Gain Compression Line -15 -5 P-1dBin=-17.5dBm 1.0 700 750 800 850 900 freq (MHz) 0 1000 950 -20 -30 DD INV =2.8V,V CTL1 =L,V -15 -10 -5 0 IIP3,OIP3 vs. freq ( V =V DD o =L,I =3.0mA,fRF=830+830.1MHz,Ta=25 C ) CTL2 -20 Pin (dBm) Pout,IM3 vs. Pin ( V =V -10 -25 DD INV =2.8V,V CTL1 =V CTL2 =L,I =2.8mA, DD o 20 dfRF=100kHz,PRF=-36dBm,Ta=25 C ) 2 14 OIP3=+12.3dBm OIP3 0 -20 12 -40 -2 10 -4 8 OIP3 (dBm) Pout IIP3 (dBm) Pout,IM3 (dBm) 0 -60 -80 -6 IM3 6 IIP3 IIP3=-6.4dBm -100 -40 -35 -30 -25 -20 -15 -10 -5 -8 800 0 820 840 860 freq (MHz) Pin (dBm) DD DD 3.5 INV 4 900 Gain, NF vs. V IDD vs. V (V 880 =2.8V, V CTL1 =V (V =0V) CTL2 20 INV =2.8V, V =V CTL1 CTL2 =0V, f=830MHz) 2 19 1.9 3 2.5 1.8 17 1.7 2 NF(De-embedded PCB, Connector LOSS) 16 1.5 15 2 2.5 3 3.5 V (V) DD -6- 1.6 4 4.5 5 1.5 2 2.5 3 3.5 V (V) DD 4 4.5 5 NF (dB) Gain (dB) IDD (mA) Gain 18 NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz CD Band) IIP3, OIP3 vs. V P-1dB(OUT), P-1dB(IN) vs. Ta DD (V (VINV=2.8V, V =V =0V, f=830+830.1MHz, Pin=-36dBm) CTL1 CTL2 13 1 =2.8V, V =V CTL1 =0V, freq=830MHz) CTL2 -13 12 OIP3 10 -3 9 -4 8 -5 7 -6 6 P-1dB(OUT) (dBm) -2 -7 1 11 OIP3 (dBm) -1 0 -15 -1 -16 -2 -17 P-1dB(IN) 5 IIP3 -14 P-1dB(OUT) P-1dB(IN) (dBm) 0 IIP3 (dBm) INV 2 -3 -18 4 -8 3 -9 2 2.5 3 3.5 V (V) 4 4.5 -4 5 -19 2 2.5 3 3.5 VDD (V) DD IDD vs. Ta (V =V DD INV =2.8, V CTL1 =V CTL2 4 4.5 5 Gain, NF vs. Ta (V =V =0V, freq=830MHz) DD INV =2.8V, V =V CTL1 =0V, f=830MHz) CTL2 20 4 2.8 Gain 18 2.4 3 16 2 14 1.6 2.5 NF(De-embedded PCB,Connector LOSS) 12 -20 0 20 40 60 10 -40 80 1.2 0.8 -20 0 20 o Ta ( C) o Ta ( C) OIP3 (dBm) 12.5 =2.8V, V CTL1 =V CTL2 (V =V =0V) DD -4.0 12.0 -5.0 11.5 -5.5 11.0 -6.0 10.5 -6.5 IIP3 -7.5 -8.0 -20 0 20 o Ta ( C) =2.8V, V =V CTL1 =0V, freq=830MHz) CTL2 -13 1 -14 0 -15 -1 -16 -2 -17 -7.0 9.5 9.0 -40 INV P-1dB(OUT) -4.5 OIP3 10.0 80 2 P-1dB(OUT) (dBm) 13.0 INV IIP3 (dBm) DD 60 P-1dB(OUT), P-1dB(IN) vs. Ta OIP3, IIP3 vs. Ta (V =V 40 P-1dB(IN) (dBm) 2 -40 NF (dB) Gain (dB) IDD (mA) 3.5 40 60 80 P-1dB(IN) -3 -4 -40 -18 -19 -20 0 20 o Ta ( C) 40 60 80 -7- NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz CD Band) -8- NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz A Band) Pout vs. Pin,Gain NF,Gain vs. freq DD INV =2.8V,V =H,V CTL1 o ( V =V =2.8V,V =H,V =L,I =2.8mA,fRF=878MHz,Ta=25 C ) DD INV CTL1 CTL2 DD 15 25 =L,I =2.8mA,Ta=25 C ) CTL2 DD 20 3.0 15 NF(Include LOSS) Pout (dBm) 10 2.0 NF(De-embedded LOSS) 750 800 850 900 freq (MHz) P-1dBout=+0.1dBm 0 10 -5 -15 0 1000 950 15 0 1dB Gain Compression Line -20 -30 INV =2.8V,V CTL1 =H,V -20 -15 DD o 0 INV =2.8V,V CTL1 =H,V =L,I =2.8mA, CTL2 DD dfRF=100kHz,PRF=-36dBm,Ta=25 C ) 2 OIP3=+11.8dBm 14 OIP3 0 0 12 -2 10 -4 8 Pout IIP3 (dBm) Pout,IM3 (dBm) -5 o DD 20 -20 -10 IIP3,OIP3 vs. freq ( V =V =L,I =2.8mA,fRF=878+878.1MHz,Ta=25 C ) CTL2 -10 -25 -40 OIP3 (dBm) DD -5 P-1dBin=-17.2dBm Pin (dBm) Pout,IM3 vs. Pin ( V =V 5 Pout -10 5 1.5 20 5 Gain (dB) NF (dB) 2.5 1.0 700 Gain 10 Gain Gain (dB) ( V =V o -60 -80 -6 IM3 6 IIP3 IIP3=-6.3dBm -100 -40 -35 -30 -25 -20 -15 -10 -5 -8 800 0 820 840 860 freq (MHz) Pin (dBm) DD DD 3.5 INV =2.8V, V 4 900 Gain, NF vs. V IDD vs. V (V 880 =2.4V, V CTL1 CTL2 (V =0V) 20 INV =2.8V, V CTL1 =2.4V, V =0V, f=878MHz) CTL2 2 19 1.9 3 2.5 1.8 17 1.7 NF (dB) Gain (dB) IDD (mA) Gain 18 2 16 1.6 NF(De-embedded PCB,Connector LOSS) 1.5 15 2 2.5 3 3.5 V (V) DD 4 4.5 5 1.5 2 2.5 3 3.5 V (V) 4 4.5 5 DD -9- NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz A Band) IIP3, OIP3 vs. V P-1dB(OUT), P-1dB(IN) vs. Ta DD (V (VINV=2.8V, V =2.4V, V =0V, f=878+878.1MHz, Pin=-36dBm) CTL1 CTL2 13 1 INV =2.8V, V =2.4V, V CTL1 CTL2 =0V, freq=878MHz) -13 3 12 0 OIP3 -1 -14 2 11 9 -4 8 -5 7 -6 6 -7 5 IIP3 1 -15 0 -16 -1 -17 P-1dB(IN) -2 P-1dB(IN) (dBm) 10 -3 P-1dB(OUT) (dBm) -2 OIP3 (dBm) IIP3 (dBm) P-1dB(OUT) -18 4 -8 2 2.5 3 3.5 V (V) 4 4.5 -19 -3 3 -9 2 5 2.5 3 3.5 VDD (V) DD IDD vs. Ta (V =V DD INV =2.8V, V =2.4V, V CTL1 4 4.5 5 Gain, NF vs. Ta CTL2 (V =V =0V, freq=878MHz) DD INV =2.8V, V =2.4V, V CTL1 CTL2 =0V, f=878MHz) 20 4 2.8 Gain 18 2.4 16 2 14 1.6 3 NF (dB) Gain (dB) IDD (mA) 3.5 2.5 12 1.2 NF(De-embedded PCB,Connector LOSS) -20 0 20 40 60 10 -40 80 0.8 -20 0 20 o Ta ( C) o Ta ( C) DD CTL1 (V =V =0V) DD CTL2 OIP3 -4.5 12.0 -5.0 11.5 -5.5 11.0 -6.0 10.5 -6.5 IIP3 10.0 80 INV =2.8V, V =2.4V, V CTL1 CTL2 =0V, freq=878MHz) 2 -4.0 -13 P-1dB(OUT) 1 P-1dB(OUT) (dBm) OIP3 (dBm) 12.5 INV =2.4V, V IIP3 (dBm) 13.0 =2.8V, V 60 P-1dB(OUT), P-1dB(IN) vs. Ta OIP3, IIP3 vs. Ta (V =V 40 -14 0 -15 -1 -16 -2 -17 -7.0 P-1dB(IN) -3 9.5 9.0 -40 - 10 - -18 -7.5 -8.0 -20 0 20 o Ta ( C) 40 60 80 -4 -40 -19 -20 0 20 o Ta ( C) 40 60 80 P-1dB(IN) (dBm) 2 -40 NJG1112PB1 QTYPICAL CHARACTERISTICS (800MHz A Band) - 11 - NJG1112PB1 QTYPICAL CHARACTERISTICS (1.5GHz Band) Pout vs. Pin,Gain NF,Gain vs. freq ( V =V DD INV =2.8V,V =L,V CTL1 o o CTL2 ( V =V =2.8V,V =L,V =H,I =3.0mA,fRF=1490MHz,Ta=25 C ) DD INV CTL1 CTL2 DD 15 25 =H,I =3.0mA,Ta=25 C ) DD 20 2.5 Gain 10 Pout (dBm) NF(Include LOSS) 10 Gain (dB) NF (dB) 1.5 5 0 10 -5 5 Pout 0 -10 5 1.0 15 P-1dBout=+0.6dBm Gain (dB) 15 2.0 20 Gain NF(De-embedded LOSS) -15 0.5 1300 1350 1400 1450 1500 freq (MHz) 0 1600 1550 -5 1dB Gain Compression Line -20 -30 P-1dBin=-16.2dBm -10 -25 -20 -15 -10 -5 0 Pin (dBm) IIP3,OIP3 vs. freq Pout,IM3 vs. Pin ( V =V DD o ( V =V =2.8V,V =L,V =H,I =3.0mA,fRF=1490+1490.1MHz,Ta=25 C ) INV CTL1 CTL2 DD 20 DD INV =2.8V,V =L,V CTL1 CTL2 =H,I =3.0mA, DD o dfRF=100kHz,PRF=-36dBm,Ta=25 C ) 4 18 OIP3=+14.3dBm 0 2 -40 0 14 -2 12 OIP3 (dBm) OIP3 Pout IIP3 (dBm) Pout,IM3 (dBm) -20 16 -60 -80 -4 IM3 10 IIP3 IIP3=-3.5dBm -100 -40 -35 -30 -25 -20 -15 -10 -5 -6 8 1460 1470 1480 1490 1500 1510 1520 1530 1540 freq (MHz) 0 Pin (dBm) Gain, NF vs. V IDD vs. V DD DD (V 3.5 INV =2.8V, V =0V, V CTL1 (V =2.4V) CTL2 19 INV =2.8V, V =0V, V CTL1 CTL2 =2.4V, f=1490MHz) 1.5 18 1.4 3 2.5 1.3 16 1.2 NF(De-embedded PCB,Connector LOSS) 2 15 1.5 14 2 2.5 3 3.5 V (V) DD - 12 - 1.1 4 4.5 5 1 2 2.5 3 3.5 V (V) DD 4 4.5 5 NF (dB) Gain (dB) IDD (mA) Gain 17 NJG1112PB1 QTYPICAL CHARACTERISTICS (1.5GHz Band) P-1dB(OUT), P-1dB(IN) vs. V IIP3, OIP3 vs. V DD DD (V =2.8V, V =0V, V =2.4V, f=1490+1490.1MHz, Pin=-36dBm) INV CTL1 CTL2 18 3 =2.8V, V CTL1 =0V, V =2.4V, freq=1490MHz) CTL2 -8 4 15 14 -2 13 -3 12 -4 11 -5 P-1dB(OUT) P-1dB(OUT) (dBm) 0 -1 10 IIP3 -10 2 16 0 -12 -2 -14 P-1dB(IN) -4 -16 -6 -18 P-1dB(IN) (dBm) OIP3 1 IIP3 (dBm) INV 17 2 OIP3 (dBm) (V 9 -6 2 2.5 3 3.5 V (V) 4 4.5 -20 -8 8 -7 2 5 2.5 3 3.5 VDD (V) DD IDD vs. Ta (V =V DD INV =2.8V, V =0V, V CTL1 CTL2 4 4.5 5 Gain, NF vs. Ta (V =V =2.4V, freq=1490MHz) DD INV =2.8V, V CTL1 =0V, V =2.4V, f=1490MHz) CTL2 20 4 2.4 Gain 18 2 16 1.6 14 1.2 3 NF (dB) Gain (dB) IDD (mA) 3.5 2.5 12 0.8 NF(De-embedded PCB,Connector LOSS) -20 0 20 40 60 10 -40 80 0.4 -20 0 o Ta ( C) CTL1 DD 15.0 -1.0 14.5 -1.5 OIP3 14.0 OIP3 (dBm) CTL2 (V =V =2.4V, freq=1490MHz) -2.5 13.0 -3.0 12.5 -3.5 INV =2.8V, V CTL1 =0V, V =2.4V, freq=1490MHz) CTL2 -12 -13 P-1dB(OUT) -1 -14 -2 -15 -3 -16 -4.0 IIP3 P-1dB(IN) -4 11.5 11.0 -40 80 0 -2.0 13.5 12.0 60 1 P-1dB(OUT) (dBm) INV =0V, V IIP3 (dBm) DD =2.8V, V 40 P-1dB(OUT), P-1dB(IN) vs. Ta OIP3, IIP3 vs. Ta (V =V 20 o Ta ( C) P-1dB(IN) (dBm) 2 -40 -17 -4.5 -5.0 -20 0 20 o Ta ( C) 40 60 80 -5 -40 -18 -20 0 20 o Ta ( C) 40 60 80 - 13 - NJG1112PB1 QTYPICAL CHARACTERISTICS (1.5GHz Band) - 14 - NJG1112PB1 QAPPLICATION CIRCUIT L5 L1 1.5GHz Band IN 1.5GHz Band OUT 9 L2 8 C3 7 L6 L3 800MHz A Band IN V DD 6 10 C2 11 5 12 4 L7 L4 800MHz CD Band IN 1 2 V CTL1 800MHz CD/A Band OUT C1 3 V CTL2 V INV Parts list Parts ID CONSTANT COMMENT L1 10nH TAIYO-YUDEN (HK1005, 1005size) L2 8.2nH TAIYO-YUDEN (HK1005, 1005size) L3 27nH TAIYO-YUDEN (HK1005, 1005size) L4 33nH TAIYO-YUDEN (HK1005, 1005size) L5 5.6nH TAIYO-YUDEN (HK1005, 1005size) L6 1.5nH TAIYO-YUDEN (HK1005, 1005size) L7 10nH TAIYO-YUDEN (HK1005, 1005size) C1 1.5pF MURATA (GRM36, 1005size) C2 0.1uF MURATA (GRM36, 1005size) C3 3pF MURATA (GRM36, 1005size) NOTE: 1) All terminals other than a measured terminal are measured at 50Ω terminus. - 15 - NJG1112PB1 QRECOMMENDED PCB DESIGN 1.5GHz Band IN 1.5GHz Band OUT L2 L5 L1 C3 L6 VDD A Band (800MHz) IN L7 L3 C2 C1 L4 VINV 1pin INDEX VCTL2 800MHz Band OUT VCTL1 CD Band (800MHz) IN PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50Ω) PCB SIZE=17x23mm - 16 - NJG1112PB1 QPACKAGE OUTLINE (FFP12-B1) 12pin 1pin INDEX (TOP VIEW) 0.35 1pin 2pin INDEX 0.254±0.1 0.85±0.15 0. 2.0±0.1 0.30 0.17 0.20 0.50 0.103 0.303 35 (SIDE VIEW) (BOTTOM VIEW) 0.365 0.27 2.0±0.1 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : mm : Ceramic : Epoxy resin : Au : 10mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 17 -