NJG1110PB1 PDC Dual Band LNA GaAs MMIC n GENERAL DESCRIPTION The NJG1110PB1 is a dual band low noise amplifier (2 input 2 output) GaAs MMIC for 800MHz and 1500MHz band. The band switching between 800MHz and 1500MHz is established by one bit control signal by using built-in inverter circuit. An ultra small & thin FFP12 (Flip-Chip Fine package) package is adopted. n FEATURES lLow voltage operation lLow current consumption lLow control current lHigh gain lLow noise figure lHigh output IP3 lUltra small & ultra thin package n PACKAGE OUTLINE NJG1110PB1 +2.8V typ. 2.7mA typ. 20uA typ. 18dB typ. @f=820MHz 16dB typ. @f=1490MHz 1.2dB typ. @f=820MHz 1.1dB typ. @f=1490MHz +10dBm typ. @f=820MHz +13dBm typ. @f=1490MHz FFP12-B1 (Package size: 2.0x2.0x0.85mm) n PIN CONFIGURATION Note: The specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1110PB1 n ABSOLUTE MAXIMUM RAT INGS (Ta=25°C, Zs =Zl=50Ω) PARAMETERS SYMBOL CONDITIONS RATINGS UNITS Operating voltage VDD 5.0 V Control voltage VCTL 5.0 V Inverter supply voltage VINV 5.0 V Input power Pin +15 dBm Power dissipation PD 300 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+125 °C VDD =2.8V n ELECTRICAL CHARACTERISTICS 1 (DC) (Ta=+25°C, Zs =Zl=50Ω, VDD =VINV=2.8V) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.8 4.5 V Inverter supply voltage VINV 2.5 2.8 4.5 V Control voltage (High) VCTL(H) 2.0 2.8 VINV V Control voltage (Low) VCTL(L) 0.0 0.0 0.8 V No RF signal, VCTL=VCTL(L) - 2.7 3.25 mA No RF signal, VCTL=VCTL(H) - 2.7 3.25 mA Operating current IDD Control current ICTL No RF signal - 20 60 uA Inverter current IINV No RF signal - 100 200 uA -2- NJG1110PB1 nELECTRICAL CHARACTERISTICS 2 (800MHz BAND RF) (Ta=+25°C, Zs =Zl=50Ω, VDD =VINV=2.8V, VCTL=VCTL(L), freq=810~885MHz, with application circuit) PARAMETERS Small signal gain Gain flatness Noise figure Pin at 1dB compression point Output 3rd order intercept point Isolation Image suppression ratio SYMBOL CONDITIONS Gain1 MIN TYP MAX UNITS 16.0 18.0 19.0 dB Gflat1 freq=810~830MHz - - 0.5 dB Gflat2 freq=838~843MHz - - 0.5 dB Gflat3 freq=870~885MHz - - 0.5 dB NF1 - 1.2 1.4 dB P-1dB(IN)1 -21 -18 - dBm +6 +10 - dBm 25 30 - dB ISL1 f1=freq, f2=freq+100kHz Pin=-35dBm freq=680~780MHz ISL2 freq=1360~1560MHz 35 45 - dB ISL3 freq=2040~2340MHz 45 55 - dB IMR1 freq=582.4~657.4MHz 4 6 - dB OIP3_1 RF INPUT1 VSWR VSWRi1 - - 2.2 - RF OUTPUT1 VSWR VSWRo1 - - 2.0 - nELECTRICAL CHARACTERISTICS 3 (1.5GHz BAND RF) (Ta=+25°C, Zs =Zl=50Ω, VDD =VINV=2.8V, VCTL=VCTL(H), freq=1477~1501MHz, with application circuit) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS 15.0 16.0 17.0 dB - - 0.5 dB Small signal gain Gain2 Gain flatness Gflat4 Noise figure Pin at 1dB compression point Output 3rd order intercept point NF2 - 1.1 1.25 dB P-1dB(IN)2 -20 -17 - dBm f1=freq, f2=freq+100kHz Pin=-35dBm +6 +13 - dBm ISL4 freq=1580~1620MHz 25 30 - dB ISL5 freq=3160~3240MHz 40 50 - dB ISL6 freq=4740~4860MHz 30 40 - dB IMR2 freq=1700~1729MHz 3 5 - dB Isolation Image suppression ratio OIP3_2 freq=1477~1501MHz RF INPUT2 VSWR VSWRi2 - - 2.1 - RF OUTPUT2 VSWR VSWRo2 - - 2.0 - -3- NJG1110PB1 n TERMINAL INFORMATION Pin Symbol 1 VCTL Control Voltage terminal to select 800MHz band or 1.5GHz band to celect. 2 GND Ground terminal (0V). 3 GND Ground terminal (0V). 4 5 6 Description Output terminal of 1.5GHz band. This terminal is also the power supply RFOUT2 terminal of the LNA, please use inductor (L5) to connect power supply. (Please see application circuit.) GND Ground terminal (0V). Output terminal of 800MHz band. This terminal is also the power supply RFOUT1 terminal of the LNA, please use inductor (L3) to connect power supply. (Please see application circuit.) 7 GND Ground terminal (0V). 8 GND Ground terminal (0V). 9 VINV Power supply terminal of the inverter circuit. 10 RFIN1 11 GND 12 RFIN2 Output terminal of 800MHz band. The DC blocking capacitor is not required. Ground terminal (0V). Output terminal of 1.5GHz band. The DC blocking capacitor is not required. NOTE: 1) Ground terminal (2, 3, 5, 8, 11pin) should be connected to ground plane by multiple via holes for good grounding. 2) Please connect bypass capacitors possible close to inductors (L3, L5).. -4- NJG1110PB1 n TYPICAL CHARACTERISTICS (800MHz Band) NF,Gain vs. freq ( V =V DD 2.5 =2.8V,V INV CTL =0V,I Input Line Loss 800MHz Band o DD =2.6mA,Ta=25 C ) 20 0.20 2.0 15 1.5 10 1.0 NF(Embedded PCB,Connector LOSS) 5 NF(De-embedded PCB,Connector LOSS) INPUT LINE LOSS ( dB ) 0.10 Gain (dB) NF (dB) Gain 0.00 -0.10 -0.20 -0.30 -0.40 750 800 850 900 -0.50 0 1000 950 0 500 1000 Pout vs. Pin,Gain ( V =2.8V,V DD =0V,I CTL DD 1dB Gain Compression Line Gain 3000 =2.8V,V INV CTL =0V,I o DD =2.6mA,,Ta=25 C ) 0 P-1dB(OUT) 10 -10 5 Pout P-1dB(IN) (dBm) Gain (dB) 15 P-1dB(OUT) =-1.8dBm -15 2500 -10 20 0 Pout (dBm) ( V =V 25 -5 2000 P-1dB(IN),P-1dB(OUT) vs. freq o =2.6mA,freq=820MHz,Ta=25 C ) DD 10 5 1500 freq ( MHz ) freq (MHz) -12 -2 -14 -4 -16 -6 -18 0 P-1dB(OUT) (dBm) 0.5 700 -8 P-1dB(IN) P-1dB(IN)=-18.5dBm -20 -40 -20 800 -5 -30 -20 -10 0 10 820 Pin (dBm) Pout,IM3 vs. Pin ( V =V DD =2.8V,V INV CTL =0V,I =2.6mA,f=820+820.1MHz,Ta=25 C ) 20 o ( V =V =2.8V,V =0V,I =2.6mA,df=100kHz,P =-36dBm,Ta=25 C ) DD INV CTL DD RF 0 14 OIP3=+9.9dBm -2 Pout 12 -20 OIP3 IIP3 (dBm) Pout,IM3 (dBm) -10 900 -40 IM3 -4 10 -6 8 -8 6 OIP3 (dBm) 0 880 IIP3,OIP3 vs. freq o DD 840 860 freq (MHz) -60 -80 IIP3 IIP3=-7.8dBm -100 -40 -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0 -10 800 820 840 860 freq (MHz) 880 4 900 -5- NJG1110PB1 n TYPICAL CHARACTERISTICS (800MHz Band) IDD vs. VDD (V =2.8V,V INV 3.0 CTL Gain,NF vs. VDD (V =0V,freq=820MHz ) 19 =2.8V,V INV CTL =0V,freq=810 to 885MHz ) 1.6 Max (810 to 885MHz) 18 1.5 2.0 17 Max (810 to 885MHz) 16 1.5 15 1.4 Min (810 to 885MHz) 1.3 NF(De-embedded PCB,Connector LOSS) NF ( dB ) Gain Gain ( dB ) IDD ( mA ) 2.5 1.2 Min (810 to 885MHz) 1.0 2.0 2.5 3.0 3.5 4.0 4.5 14 2.0 5.0 2.5 3.0 VDD ( V ) OIP3,IIP3 vs. VDD (V 12 =2.8V,V INV CTL 3.5 VDD ( V ) 4.0 4.5 1.1 5.0 P-1dB(OUT),P-1dB(IN) =0V,freq=810 to 885MHz ) (V INV =2.8V,V =0V,freq=820MHz ) CTL -3 1 -14 -4 0 -5 -1 -16 -2 -17 -3 -18 Min (810 to 885MHz) 10 9 -6 8 Max (810 to 885MHz) 7 Min (810 to 885MHz) -7 -8 IIP3 6 -9 5 -10 4 2.0 -6- 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 -11 5.0 IIP3 ( dBm ) OIP3 ( dBm ) OIP3 -15 P-1dB(OUT) -4 -19 P-1dB(IN) -5 -20 -6 -21 -7 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 -22 5.0 P-1dB(IN) ( dBm ) 11 P-1dB(OUT) ( dBm ) Max (810 to 885MHz) NJG1110PB1 n TYPICAL CHARACTERISTICS (800MHz Band) IDD vs. Ta ( V =V 3.0 DD INV =2.8V,V Gain,NF vs. Ta =0V,IDD=2.6mA,freq=820MHz ) ( V =V CTL DD 20 INV =2.8V,V =0V,IDD=2.6mA ) CTL 2.4 Gain 18 2.0 2.0 16 1.6 NF(De-embedded PCB,Connector LOSS) 14 1.2 NF (dB) Gain (dB) IDD (mA) 2.5 1.5 12 -20 0 20 40 60 10 -40 80 0.4 -20 0 o Ta ( C) OIP3,IIP3 vs. Ta ( V =V DD =2.8V,V INV CTL ( V =V DD 11.0 -5.0 f=810MHz f=840MHz f=885MHz -5.5 60 80 =2.8V,V INV CTL -15 -1 -16 9.5 -6.5 9.0 -7.0 8.5 -7.5 8.0 -8.0 7.5 -8.5 P-1dB(OUT) P-1dB(OUT) (dBm) OIP3 =0V,IDD=2.6mA,freq=820MHz ) 0 -6.0 IIP3 ( dBm ) OIP3 ( dBm ) 10.0 40 P-1dB(IN),P-1dB(OUT) vs. Ta =0V,IDD=2.6mA ) 10.5 20 o Ta ( C) -2 -17 -3 -18 -4 -19 P-1dB(IN) -5 P-1dB(IN) (dBm) 1.0 -40 0.8 f=810MHz f=840MHz f=885MHz -20 IIP3 7.0 -40 -9.0 -20 0 20 o Ta ( C) 40 60 80 -6 -40 -21 -20 0 20 o Ta ( C) 40 60 80 -7- NJG1110PB1 n TYPICAL CHARACTERISTICS (800MHz Band) -8- S11, S22 Zin, Zout VSWR S21, 12 NJG1110PB1 n TYPICAL CHARACTERISTICS (800MHz Band) S21 S11, S22 S12 S21, S12 -9- NJG1110PB1 n TYPICAL CHARACTERISTICS (1.5GHz Band) NF,Gain vs. freq ( V =V DD =V INV CTL =2.8V,I Input Line Loss 1500MHz Band o DD =2.6mA,Ta=25 C ) 2.5 20 0.00 Gain 1.5 10 NF(Embedded LOSS) 1.0 Gain (dB) NF (dB) 15 5 NF(De-embedded LOSS) INPUT LINE LOSS ( dB ) -0.05 2.0 -0.10 -0.15 -0.20 -0.25 1450 1500 0 1600 1550 -0.30 0 500 1000 freq (MHz) Pout vs. Pin,Gain ( V =V DD CTL =2.8V,I =2.6mA,freq=1490MHz,Ta=25 C ) 15 ( V =V DD 25 1dB Gain Compression Line 10 2500 3000 =2.8V,V INV CTL =0V,I o DD =2.6mA,,Ta=25 C ) -10 4 20 Gain -12 2 P-1dB(OUT) 15 Gain (dB) P-1dB(OUT)=+0.5dBm 0 10 -5 5 Pout -10 0 -15 -5 P-1dB(IN) (dBm) 5 Pout (dBm) 2000 P-1dB(IN),P-1dB(OUT) vs. freq o DD 1500 freq ( MHz ) -14 P-1dB(OUT) (dBm) 0.5 1400 0 -16 -2 P-1dB(IN) -18 -4 P-1dB(IN)=-15.5dBm -20 -40 -20 -6 1470 1475 1480 1485 1490 1495 1500 1505 1510 freq (MHz) -10 -30 -20 -10 0 10 Pin (dBm) Pout,IM3 vs. Pin DD =V INV =2.8V,I CTL IIP3,OIP3 vs. freq o =2.6mA,f=1490+1490.1MHz,Ta=25 C ) DD 20 o ( V =V =V =2.8V,I =2.6mA,df=100kHz,P =-36dBm,Ta=25 C ) DD INV CTL DD RF 2 14 OIP3=+11.8dBm OIP3 0 12 -2 10 -4 8 Pout IIP3 (dBm) -20 Pout,IM3 (dBm) 0 -40 -60 IM3 IIP3 -6 -80 6 IIP3=-5.1dBm -100 -40 -35 -30 -25 -20 Pin (dBm) - 10 - -15 -10 -5 0 -8 1460 1470 1480 1490 1500 freq (MHz) 1510 4 1520 OIP3 (dBm) ( V =V NJG1110PB1 n TYPICAL CHARACTERISTICS (1.5GHz Band) IDD vs. VDD (V INV 3.0 =2.8V,V Gain,NF vs. VDD (V =0V,freq=1490MHz ) CTL 18 =V INV =2.8V,freq=1477 to 1501MHz ) CTL 1.5 Max (1477 to 1501MHz) 17 1.4 2.5 2.0 16 1.3 Min (1477 to 1501MHz) 15 1.2 NF ( dB ) Gain ( dB ) IDD ( mA ) Gain NF(De-embedded PCB,Connector LOSS) 1.5 Max (1477 to 1501MHz) 14 1.1 Min (1477 to 1501MHz) 1.0 2.0 2.5 3.0 3.5 4.0 4.5 13 2.0 5.0 2.5 3.0 3.5 VDD ( V ) VDD ( V ) OIP3,IIP3 vs. VDD (V 14 =V INV 4.0 4.5 1.0 5.0 P-1dB(OUT),P-1dB(IN) vs. VDD =2.8V,freq=1477 to 1501MHz ) CTL (V 1 2 0 1 =V INV =2.8V,freq=1490MHz ) CTL -9 Max (1477 to 1501MHz) -10 Min (1477 to 1501MHz) -1 0 11 -2 10 -3 Max (1477 to 1501MHz) 9 -4 IIP3 8 Min (1477 to 1501MHz) -5 IIP3 ( dBm ) OIP3 ( dBm ) OIP3 P-1dB(OUT) ( dBm ) 12 P-1dB(OUT) -11 -1 -12 -2 -13 -3 -14 -4 P-1dB(IN) ( dBm ) 13 -15 P-1dB(IN) 7 6 2.0 -6 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 -7 5.0 -5 -6 2.0 -16 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 -17 5.0 - 11 - NJG1110PB1 n TYPICAL CHARACTERISTICS (1.5GHz Band) IDD vs. Ta ( V =V 3.0 DD =V INV Gain,NF vs. Ta ( V =V =2.8V,IDD=2.6mA,freq=1490MHz ) CTL DD 20 INV =V CTL =2.8V,IDD=2.6mA ) 2.4 f=1477MHz f=1490MHz f=1501MHz 18 2.0 2.5 2.0 16 1.6 14 1.2 1.5 NF(De-embedded PCB,Connector LOSS) 12 -20 0 20 40 60 0.8 10 -40 80 0.4 -20 0 o Ta ( C) OIP3,IIP3 vs. Ta ( V =V DD INV =V CTL ( V =V DD 13.0 -2.0 f=1477MHz f=1490MHz f=1501MHz -2.5 -3.5 11.0 -4.0 10.5 -4.5 10.0 -5.0 IIP3 - 12 - -5.5 -6.0 -20 0 20 o Ta ( C) 40 80 =V CTL =2.8V,IDD=2.6mA,freq=1490MHz ) -11 0 -12 P-1dB(OUT) 60 80 P-1dB(OUT) (dBm) 11.5 9.0 -40 INV -3.0 OIP3 9.5 60 1 IIP3 (dBm) OIP3 (dB) 12.0 40 P-1dB(IN),P-1dB(OUT) vs. Ta 2.8V,IDD=2.6mA ) 12.5 20 o Ta ( C) -1 -13 -2 -14 -3 -15 P-1dB(IN) -4 -5 -40 -16 -17 -20 0 20 o Ta ( C) 40 60 80 P-1dB(IN) (dBm) 1.0 -40 NF (dB) Gain (dB) IDD (mA) Gain NJG1110PB1 n TYPICAL CHARACTERISTICS (1.5GHz Band) S11, S22 Zin, Zout VSWR S21, 12 - 13 - NJG1110PB1 n TYPICAL CHARACTERISTICS (1.5GHz Band) - 14 - S21 S12 S11, S22 S21, S12 NJG1110PB1 n APPLICATION CIRCUIT VINV=2.8V 9 8 7 L2 RF INPUT 1 C1 10 RF OUTPUT 1 6 L3 L1 S 800 G D C3 VDD=2.8V 11 5 G 1500 D S RF OUTPUT 2 L4 RF INPUT 2 12 4 L5 1 2 C2 3 V CTL=2.8/0V PARTS LIST Parts ID CONSTANT COMMENT L1 L2 22nH 27nH TAIYO-YUDEN (HK1005, 1005size) MEC (ELJNJ, 1608size) L3 10nH TAIYO-YUDEN (HK1005, 1005size) L4 L5 12nH 15nH TAIYO-YUDEN (HK1005, 1005size) TAIYO-YUDEN (HK1005, 1005size) C1 2pF MURATA (GRM36, 1005size) C2 C3 6pF 1000pF MURATA (GRM36, 1005size) MURATA (GRM36, 1005size) *: Please use an appropriate inductor for L2 to improve Noise Figure. - 15 - NJG1110PB1 n RECOMMENDED PCB DESIGN (Top View) 800MHz Band RF INPUT 1 VINV 800MHz Band RF OUTPUT 1 L1 C1 L2 L3 C3 L4 1500MHz Band RF INPUT 2 VDD L5 C2 VCTL 1500MHz Band RF OUTPUT 2 PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50Ω) PCB SIZE=17x17mm PRECAUTIONS [1] Please locate L2, L4, L3, and L5 close to IC. [2] Please locate C3 close to L3, L5. [3] Please layout each parts as close as possible. - 16 - NJG1110PB1 nPACKAGE OUTLINE (FFP12-B1) 1 2p in 1pin INDEX (TOP VIEW) 0.35 1pin 2pin INDEX 0.254±0.1 0.85±0.15 2.0 ±0.1 0 .30 0.1 7 0.20 0.50 0.10 3 0.30 3 35 0. (SIDE VIEW) (BOTTOM VIEW) 0.365 0.27 2.0±0.1 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : mm : Ceramic : Epoxy resin : Au : 10mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 17 -