NTE2553 Silicon NPN Transistor Darlington, Motor Driver, Switch Features: D High DC Current Gain D High Breakdown Voltage D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut–Off Current ICBO VCB = 300V, IE = 0 – – 100 µA Emitter Cut–Off Current IEBO VEB = 6V, IC = 0 50 – 150 mA V(BR)CBO IC = 1mA, IE = 0 300 – – V Collector–Emitter Sustaining Voltage VCEO(sus) IC = 250mA, L 40mH 200 – – V DC Current Gain VCE = 2V, IC = 5A 500 – 5000 VCE = 2V, IC = 10A 100 – – Collector–Base Breakdown Voltage hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 100mA – – 2.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 100mA – – 2.3 V IE = 10A, IB = 0 – 1.5 2.0 V VCE = 2V, IC = 1A – 40 – MHz Emitter–Collector Forward Voltage Transition Frequency VECF fT Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 200 – pF Turn–On Time ton – – 1.0 µs Storage Time tstg VCC = 100V, IB1 = –IB2 = 100mA – – 12 µs – – 2.0 µs Fall Time tf C B E .173 (4.4) Max .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated