NTE2323 Silicon NPN Transistor Quad, Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C, Each Die), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.98mW/°C Total Device Dissipation (TA = +25°C, Four Die Equal Power), PD . . . . . . . . . . . . . . . . . . . . . . . 1.7W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.6mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Reistance, Junction–to–Ambient, RthJA Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167°C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W Thermal Reistance, Junction–to–Case, RthJC Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39°C/W Coupling Factors, Junction–to–Ambient Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56% Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10% Coupling Factors, Junction–to–Case Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46% Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5% Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 200 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 20 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 – – V ICBO VCB = 150V, IE = 0 – – 100 nA Collector Cutoff Current Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max VCE = 10V, IC = 1mA 25 45 – VCE = 10V, IC = 10mA 40 60 – VCE = 10V, IC = 30mA 40 80 – Unit ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – 0.3 0.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – 0.7 0.9 V Current Gain–Bandwidth Product fT VCE = 20V, IC = 10mA, f = 100MHz 50 80 – MHz Output Capacitance Cobo VCB = 20V, IE = 0, f = 1MHz – 2.5 5.0 pF Input Capacitance Cibo VEB = 3V, IC = 0, f = 1MHz – 40 50 pF Pin Connection Diagram 14 Collector Collector 1 13 Base Base 2 Emitter 3 12 Emitter N.C. 4 11 N.C. Emitter 5 10 Emitter Base 6 9 Base Collector 7 8 Collector 14 8 1 7 .785 (19.95) Max .300 (7.62) .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min