2N6426 Silicon NPN Transistor Darlington General Purpose

2N6426
Silicon NPN Transistor
Darlington General Purpose Amplifier
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, VBE = 0, Note 1
40
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100A, IE = 0
40
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
12
−
−
V
Collector Cutoff Current
Emitter Cutoff Current
ICES
VCE = 25V, IB = 0
−
−
1.0
A
ICBO
VCB = 30V, IE = 0
−
−
50
nA
IEBO
VCB = 30V, IE = 0
−
−
50
nA
Note 1. Pulse test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 10mA, VCE = 5V, Note 1
20,000
−
200,000
−
IC = 100mA, VCE = 5V, Note 1
30,000
−
300,000
−
IC = 500mA, VCE = 5V, Note 1
20,000
−
200,000
−
IC = 50mA, IB = 0.5mA
−
0.71
1.2
V
IC = 500mA, IB = 0.5mA
−
0.9
1.5
V
ON Characteristics
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 0.5mA
−
1.52
2.0
V
Base−Emitter On Voltage
VBE(on)
IC = 50mA, VCE = 5V
−
1.24
1.75
V
Small−Signal Characteristics
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1.0 MHz
−
5.4
7.0
pF
Input Capacitance
Cibo
VEB 1.0V, IC = 0, f = 1.0 MHz
−
10
15
pF
Input Impedance
hie
IC = 10mA, VCE = 5V, f = 1 kHz
100
−
2000
k
Small−Signal Current Gain
hfe
IC = 10mA, VCE = 5V, f = 1 kHz
20,000
−
−
−
Current Gain − High Frequency
|hfe|
IC = 10mA, VCE = 5V, f = 100 kHz
1.5
2.4
−
−
Output Admittance
hoe
IC = 10mA, VCE = 5V, f = 1kHz
−
−
1000
mhos
Noise Figure
NF
IC = 10mA, VCE = 5V, f = 1kHz,
RS = 100 k
−
3.0
10
dB
Note 1. Pulse test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
C
B
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
E