NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/°C Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Thermal Reistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 1 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 50 nA Emitter Cutoff Current IEBO VEB = 3V, IE = 0 – – 50 nA hFE VCE = 10V, IC = 10mA 75 – – VCE = 10V, IC = 150mA 100 – – VCE = 10V, IC = 300mA 30 – – IC = 150mA, IB = 15mA – – 0.4 V IC = 300mA, IB = 30mA – – 1.6 V IC = 150mA, IB = 15mA – – 1.5 V IC = 300mA, IB = 30mA – – 2.6 V ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit fT VCE = 20V, IC = 50mA, f = 100MHz 200 – – MHz Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz – – 8 pF Input Capacitance Cibo VEB = 2V, IC = 0, f = 1MHz – – 30 pF Pin Connection Diagram 14 Collector Collector 1 Base 2 13 Base Emitter 3 12 Emitter N.C. 4 11 N.C. Emitter 5 10 Emitter Base 6 9 Base Collector 7 8 Collector 14 8 1 7 .300 (7.62) .785 (19.95) Max .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min