NTE2338 Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 50 60 70 V Emitter–Base Breakdown Voltage V(BR)EBO IE = 50mA, IC = 0 7 – – V – – 10 µA Collector Cutoff Current ICEO VCE = 50V, RBE = ∞ DC Current Gain hFE VCE = 3V, IC = 1A 2000 – 30000 VCE(sat) IC = 1A, IB = 1mA – – 1.5 V IC = 1.5A, IB = 1.5mA – – 2.0 V IC = 1A, IB = 1mA – – 2.0 V IC = 1.5A, IB = 1.5mA – – 2.5 V IC = 1A, IB1 = –IB2 = 1mA – 0.5 – µs – 2.0 – µs Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VBE(sat) Turn–On Time ton Turn–Off Time toff Schematic Diagram C B E .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max