isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1126 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1126 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.5 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA hFE DC Current Gain IC= 5A; VCE= 3V VECF C-E Diode Forward Voltage IF= 10A 120 V 7 V B B 1000 20000 3.0 V Switching times ton Turn-on Time 0.8 μs 8.0 μs IC= 5A, IB1= -IB2= 10mA toff Turn-Off Time isc Website：www.iscsemi.cn 2