NTE NTE2352

NTE2351 (NPN) & NTE2352 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Features:
D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A
D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut–Off Current
ICBO
VCB = 100V, IE = 0
–
–
20
µA
Emitter Cut–Off Current
IEBO
VEB = 5V, IC = 0
–
–
2.5
mA
80
–
–
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
DC Current Gain
hFE (1)
VCE = 2V, IC = 1A
2000
–
–
hFE (2)
VCE = 2V, IC = 3A
1000
–
–
Collector–Emitter Saturation Voltage
VCE(sat) IC = 3A, IB = 6mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 3A, IB = 6mA
–
–
2.0
V
VCC = 30V, IB1 = –IB2 = 6mA,
Duty Cycle ≤ 1%
–
0.2
–
µs
–
1.5
–
µs
–
0.6
–
µs
Switching Characteristics
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
C
C
B
B
]4.5kΩ
]300Ω
]4.5kΩ
]300Ω
E
E
.343 (8.72)
.148 (3.72)
.256 (6.5)
.059 (1.5)
.406
(10.3)
.043 (1.1)
.413
(10.5)
.032 (0.82)
.100 (2.54)
B
.020 (.508)
C
E
.043 (1.1)