NTE NTE2364

NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
D Low Saturation Voltage
D Large Current Capacity and Wide ASO
Applications:
D Power Supplies
D Relay Drivers
D Lamp Drivers
D Automotive Wiring
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Allowable Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1 For PNP device (NTE2364), voltage and current values are negative.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
0.1
µA
DC Current Gain
Gain Bandwidth Product
hFE (1)
VCE = 2V, IC = 100mA
200
–
400
hFE (2)
VCE = 2V, IC = 1.5A
40
–
–
VCE = 10V, IC = 50mA
–
150
–
fT
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
–
12
–
pF
–
22
–
pF
–
0.15
0.4
V
–
0.3
0.7
V
–
0.9
1.2
V
60
–
–
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞
50
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
Output Capacitance
NTE2363
cob
Test Conditions
VCB = 10V, f = 1MHz
NTE2364
Collector–Emitter Saturation Voltage
NTE2363
VCE(sat) IC = 1A, IB = 50mA
NTE2364
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 50mA
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
V(BR)EBO IE = 10µA, IC = 0
.343
(8.73)
Max
.492
(12.5)
Min
.024 (0.62) Max
E C B
.102 (2.6) Max
.059 (1.5) Typ
.018 (0.48)
.118 (3.0) Max
.236 (6.0)Dia Max
.197 (5.0)
.102 (2.6) Max