NTE2564 (NPN) & NTE2565 (PNP) Complementary Silicon Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Current Capacity Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 mA DC Current Gain hFE VCE = 2V, IC = 1A 100 – 280 VCE = 2V, IC = 4A 30 – – VCE = 5V, IC = 1A – 120 – MHz IC = 3A, IB = 150mA – – 0.4 V – – 0.5 V Gain–Bandwidth Product Collector Emitter Saturation Voltage NTE2564 NTE2565 fT VCE(sat) Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 Min Typ Max Unit 60 – – V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 30 – – V Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V – 0.1 – µs – 0.5 – µs – 0.2 – µs – 1.6 – µs Turn–On Time ton Storage Time NTE2564 tstg VCC = 10V, VBE = –5V, 20IB1 = –20IB2 = IC = 4A, Pulse Width = 20µs, Duty Cycle ≤ 1%, Note 1 NTE2565 Fall Time tf Note 1. For NTE2565, the polarity is reversed. .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54)