NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 1 µA Emitter Cutoff curent IEBO VEB = 6V, IC = 0 – – 2 µA Collector–Base Voltage VCBO IC = 100µA 100 – – V Collector–Emitter Sustaining Voltage VCEO(sus) IC = 10mA 60 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 400mA – 0.3 0.8 V Base–Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 400mA – 1.0 1.4 V hFE1 VCE = 2V, IC = 100mA 27 100 264 hFE2 VCE = 2V, IC = 2A – 60 – Cob VCB = 10V, IE = 0, f = 1MHz – 45 60 pF VCB = 10V, IE = –15mA, f = 31.9MHz – 35 70 ps DC Current Gain Output Capacitance Collector–Base Time Constant Cc rbb’ Gain Bandwidth Product fT VCB = 10V, IE = –100mA 70 140 – MHz Power Output PO PIN = 400mW, VCC = 12V 4 6 – W f = 27MHz 10 – – dB Power Gain PG .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)