NTE399 Silicon NPN Transistor High Voltage Video Amp (Compl to NTE2366) Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 1.0 µA Emitter Cutoff Current IEBO VEB = 6V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 10V, IC = 5mA 100 – 220 VCB = 30V, IC = 10mA 50 – – MHz Cob VCB = 10V, f = 1MHz – – 7.5 pF Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – – 0.6 V Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – – 1.0 V Current Gain–Bandwidth Product Output Capacitance fT .339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max