NTE284 (NPN) & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications: D Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB = 90V, IE = 0 – – 100 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 µA 180 – – V 5 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 0.1A, IB = 0 Emitter–Base Breakdown Voltage DC Current Gain Collector–Emitter Saturation Voltage Base to Emitter Voltage Current Gain Bandwidth Product Output Capacitance NTE284 NTE285 V(BR)EBO IE = 10mA, IC = 0 hFE VCE = 5V, IC = 2A 70 – 140 V VCE(sat) IC = 10A, IB = 1A – – 3.0 V VBE VCE = 5V, IC = 10A – – 2.5 V fT VCE = 5V, IC = 2A – 6 – MHZ VCB = 10V, IE = 0, f = 1MHZ – 300 – pF – 450 – pF Cob Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (hFE) matched to within 10% of each other. Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and NTE285 (PNP). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case