isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD427 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High Power Dissipation: PC= 80W(Max)@TC=25℃ ·Complement to Type 2SB557 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 50W high-fidelity audio frequency amplifier output stage. SYMBOL ww PARAMETER w n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE UNIT 120 V 120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IE Emitter Current-Continuous -8 A PC Collector Power Dissipation @TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD427 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V 2.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS hFE-1 Classifications 40-80 70-140 B n c . i m e s c is w. w w O TYP. VEB= 5V; IC= 0 Current-Gain—Bandwidth Product R MIN isc Website：www.iscsemi.cn IC= 1A; VCE= 5V 40 IC= 5A; VCE= 5V 20 IE= 0; VCB= 10V; f= 1MHz IC= 1A; VCE= 5V MAX UNIT 140 170 pF 5 MHz