ISC 2SD428

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2SD427
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min)
·High Power Dissipation: PC= 80W(Max)@TC=25℃
·Complement to Type 2SB557
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency
amplifier output stage.
SYMBOL
ww
PARAMETER
w
n
c
.
i
m
e
s
c
s
.i
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
VALUE
UNIT
120
V
120
V
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IE
Emitter Current-Continuous
-8
A
PC
Collector Power Dissipation
@TC=25℃
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
2SD427
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 0.1A; IB= 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 5A; VCE= 5V
2.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
0.1
mA
hFE-1
DC Current Gain
hFE-2
DC Current Gain
COB
Output Capacitance
fT
‹
CONDITIONS
hFE-1 Classifications
40-80
70-140
B
n
c
.
i
m
e
s
c
is
w.
w
w
O
TYP.
VEB= 5V; IC= 0
Current-Gain—Bandwidth Product
R
MIN
isc Website:www.iscsemi.cn
IC= 1A; VCE= 5V
40
IC= 5A; VCE= 5V
20
IE= 0; VCB= 10V; f= 1MHz
IC= 1A; VCE= 5V
MAX
UNIT
140
170
pF
5
MHz