NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold Technology Improves Performance under Variable Environmental Conditions D New Lens Design offers Improved Optical Performance Applications: D Low Bit Rate Communication Systems D Keyboards D Coin Handlers D Paper Handlers D Touch Screens D Shaft Encoders D General Purpose Interruptive and Reflective Event Sensors Absolute Maximum Ratings: Reverse Breakdown Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Device Power Dissipation (TA = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Ambient Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Lead Temperature (During Soldering, Note 3), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B. Note 2 Measured with device soldered into a typical printed circuit board. Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should be applied in order to prevent the case temperature from exceeding +100°C. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Reverse Leakage Current IR VR = 6V – 0.05 100 µA Forward Voltage VF IF = 50mA – 1.3 1.5 V – –1.6 – mV/°C – 24 50 pF Temperature Coefficient of Forward Voltage Capacitance ∆VF C V = 0V, f = 1MHz Optical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit 930 940 950 nm Spectral Half Power Wavelength – 48 – nm Spectral Output Temperature Shift – 0.3 – nm/°C λP Peak Emission Wavelength Test Conditions IF = 50mA Axial Power Output Intensity PO IF = 20mA, Note 4 50 150 – µW/ sq cm Intensity Per Unit Solid Angle Ee IF = 20mA, Note 4 0.2 0.65 – mW/Sr Power Half–Angle Ω – ±20 – ° tr, tf – 1.0 – µs Rise Time and Fall Time Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under test. .160 (4.06) .045 (1.14) Dia .120 (3.04) .125 (3.17) .168 (4.27) .750 (19.05) Max .020 (.508) K A .100 (2.54) .060 (1.52) .103 (2.62)